Download EE293_syllabus_updated_12-10-2013 - Courses

University of California, Santa Cruz
Department of Electrical Engineering
EE 293 Fundamentals of Semiconductor Physics – Nanoscale Materials and Devices
What
When
Lecture Tue & Thu 12-1:30
Where
Silicon Valley and UCSC
Important Dates
Class begins:
Final Exam or Presentation:
Catalog Description: Advanced topics in Electrical Engineering
1/7
3/18-21
Grading (tentative)
Homework:
10 %
Midterm Exam:
30 %
Final Exam or Presentation:
60 %
The format to be finalized judging the class size
Instructor: Toshishige Yamada, Ph.D. (EE)
Office: TBA
Phone: TBA
Office Hours: TBA
Email:
[email protected]
[email protected]
Text and materials
e.g., R. F. Pierret, Advanced Semiconductor
Fundamentals, 2nd ed., Modular Series on Solid
State Devices VI (Prentice, Englewood Cliffs,
2002). ISBN-13: 978-0130617927 is a good
reference book, but if you already have a textbook
discussing similar subjects, that will do.
Appropriate papers are distributed in class.
Purpose: After surveying fundamentals for semiconductor materials and
devices, we will discuss nanoscale materials and devices. In the former part, we
re-examine concepts that are often misunderstood. The latter topics include, but
no limited to, physics of nanocarbons, nanocarbon FETs and gas sensors,
nanoscale Schottky junction, quantum capacitance and kinetic inductance,
Coulomb blockade, Landauer-Buttiker formula, Aharonov-Bohm, Shubnikovde Haas, resonant-tunneling, weak location, etc.
General Information: There will be a midterm exam. The final will be either
an exam or a presentation. HWs will be assigned.
Lecture Schedule:
Week Text
Topics: italic topics are unconventional
1
Ch. 1
Semiconductor Basics: metals, semiconductors,
Sec.
and insulators, crystal structures, basis and lattice,
2.1Miller indices
2.3
Introduction to Quantum Mechanics:
Schrodinger equation, 1D quantum well
2
Sec.
Solutions of the Wave Equation: Kronig-Penney
2.3,
model, Bloch theorem, Bloch sum, tight-binding
3.1
method
3
Sec.
Energy Bands in Solids: Brillouin zone, E-K
3.2,
diagram, valence and conduction bands in terms of
3.3
atomic orbitals, effective mass, carrier velocity
4
Sec.
Carrier Statistics: density of states (DOS), Fermi4.1Dirac function, donors and acceptors, dopant
4.3
concentration, Fermi level and chemical potential
5
Sec.
Carrier Statistics (cont'): equilibrium carrier
4.4,
concentration, mass action law, quasi-Fermi level
4.5
Recombination/Generation: R-G statistics, reexamine SRH, other recombination mechanisms
6
Sec.
Carrier Transport: Hall effect, hot probe
5.1-2
measurement, drift, diffusion, R-G currents
5.4
Midterm Exam (tentative):
Ch. 6
7
Papers Nanocarbons: physics of nanotube and graphene,
FET devices, gas sensors, electrothermal transport
8
Papers Coulomb blockade: Id-Vd staircase, Id-Vg
oscillation, related Coulomb devices
Re-examine classical E & M: D and E fields,
Faraday's law, dielectric function
9
Papers Quantum capacitance: new capacitance concept
for single conductor, related devices
Kinetic inductance: new inductance concept in
the absence of loop, related devices
10
Papers Quantum interference: Landauer-Buttiker
formula, weak localization, Aharonov-Bohm and
Shubnikov-de Haas, resonant tunneling, related
devices
Final exam (or presentation)