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Hall effect (3.8)
I=Nqv
Gedanken experiment
fM  fE
x
x
x
v
÷ fM
qv
B
x
x
+
+
+
+
x
x
fE fM
÷
qv
E
B
÷
x
÷
÷
÷
÷
qvB  qE
I
E
B
Nq
Geometry
b
V  bE  b
V
Hall
coefficient
1
BI
Nq
Characteristics
Gauss tilsvarer Oerstedt som er 80A/m
To akse melexis hall sensor
Material characterization
Hall
coefficient
I
I
1
V b
BI
Nq
x
x
x
v
÷ fM
qv
B
x
x
x
x
qv
+ fM
v
Polarity of induced voltage can be used to determine
the polarity of majority carriers
B
x
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