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RSS100N03
Transistor
Switching (30V, ±10A)
RSS100N03
!External dimensions (Units : mm)
!Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
SOP8
5.0±0.2
(5)
(1)
(4)
Max.1.75
1.5±0.1
0.15
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
0.5±0.1
6.0±0.3
3.9±0.15
(8)
!Applications
Power switching, DC/DC converter.
0.2±0.1
0.4±0.1
0.1
1.27
Each lead has same dimensions
!Equivalent circuit
!Structure
•Silicon N-channel MOS FET
(8)
(7)
(6)
(5)
∗2
(1) (2) (3) (4)
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(8) (7) (6) (5)
(4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
!Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Pulsed
Source current
Continuous
(Body diode)
Pulsed
Total power dissipatino (TC=25°C)
Channel temperature
Strage temperature
Drain current
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
20
±10
±40
1.6
6.4
2
150
−55~+150
Unit
V
V
A
A
A
A
W
°C
°C
∗
∗
∗1 Pw≤10µs, Duty cycle≤1%
1/3
RSS100N03
Transistor
!Thermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-A)
Limits
62.5
Unit
°C / W
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-starte
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Tum-on delay time
Rise time
Tum-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
−
30
−
1.0
−
−
−
6.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
9.5
12.5
13.5
−
1070
320
200
10
16
55
24
14
2.7
5.3
Max.
10
−
10
2.5
13.0
17.2
18.5
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=±10A, VGS=10V
ID=±10A, VGS=4.5V
ID=±10A, VGS=4V
ID=±10A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=5A, VDD 15V
VGS=10V
RL=3.0Ω
RGS=10Ω
VDD 15V
VGS=5V
ID=±10A
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗Pulsed
!Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
IS=6.4A, VGS=0V
∗
∗Pulsed
!Electrical characteristic curves
1000
Ciss
Coss
Crss
100
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
tf
100
td(off)
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
tr
10
td(on)
1
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
8
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25°C
f=1MHz
VCE=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
Ta=25°C
7 VDD=15V
ID=10A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
2/3
RSS100N03
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100
300
250
200
ID=10A
ID=5A
150
100
50
0
0
2
GATE-SOURCE VOLTAGE : VGS (V)
VGS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.01
0.1
1
10
6
8
10
12
14
1
0.1
0.01
0.0
16
100
1000
100
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.01
0.1
1
10
100
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
4
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
1000
VGS=0V
Pulsed
Ta=25°C
Pulsed
SOURCE CURRENT : Is (A)
VDS=10V
Pulsed
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Transistor
1000
VGS=4V
Pulsed
Ta=125°C
100 Ta=75°C
Ta=25°C
Ta= −25°C
10
1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
100
3/3
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