Download Large-Current Switching Applications

2SB892 / 2SD1207
2SB892 / 2SD1207
Ordering number : EN930D
PNP / NPN Epitaxial Planar Silicon Transistors
Large-Current Switching Applications
Applications
•
Power supplies, relay drivers, lamp drivers, and automotive wiring.
Features
•
•
•
FBET and MBIT processed (Original process of SANYO).
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB892
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(--)60
(--)50
V
VEBO
IC
(--)6
V
(--)2
A
ICP
PC
(--)4
A
1
W
Junction Temperature
Tj
Storage Temperature
Tstg
V
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
Ratings
min
typ
max
Unit
VCB=(--)50V, IE=0A
(--)0.1
µA
VEB=(--)4V, IC=0A
(--)0.1
µA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Rev.0 I Page
1 of 5 I www.onsemi.com
Publication Order Number:
2SB892_2SD1207/D
2SB892 / 2SD1207
Continued from preceding page.
Parameter
Symbol
hFE1*
DC Current Gain
min
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)1.5A
hFE2
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
V(BR)EBO
Emitter-to-Base Breakdown Voltage
Ratings
Conditions
typ
Unit
max
100
560
40
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
150
MHz
(22)12
IC=(--)1A, IB=(--)50mA
IC=(--)1A, IB=(--)50mA
pF
(--0.3)0.15
(--0.7)0.4
(--)0.9
(--)1.2
V
V
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
(--)60
V
(--)50
V
IE=(--)10µA, IC=0A
(--)6
V
* : The 2SB892 / 2SD1207 are graded as follows by hFE at 100mA :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Package Dimensions
unit : mm (typ)
7520-002
4.7
8.5
6.0
5.0
3.0
0.5
0.6
0.5
14.0
1.0
0.5
1 : Emitter
2 : Collector
3 : Base
1 2 3
SANYO : MP
1.45
1.45
IC -- VCE
--2.4
A
40m
0m
A
Collector Current, IC -- A
2.0
--5
--1.6
mA
0
--2
--1.2
--0.8
A
--10m
--8mA
--6mA
--4mA
--2mA
--0.4
0
--0.4
--0.8
--1.2
25mA
1.6
15mA
1.2
8mA
0.8
4mA
2mA
0.4
IB=0mA
0
2SD1207
mA
50
--2.0
Collector Current, IC -- A
IC -- VCE
2.4
2SB892
--1.6
IB=0mA
0
--2.0
Collector-to-Emitter Voltage, VCE -- V
--2.4
0
ITR08646
Rev.0 I Page 2 of 5 I www.onsemi.com
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
2.4
ITR08647
2SB892 / 2SD1207
IC -- VCE
--1200
--7mA
--6mA
--5mA
--800
--4mA
--600
--3mA
--2mA
--400
--1mA
--200
IB=0mA
0
--2
--4
--6
--10
3mA
400
2mA
1mA
IB=0mA
2
4
6
8
10
Collector-to-Emitter Voltage, VCE -- V
ITR08648
IC -- VBE
12
ITR08649
IC -- VBE
1200
2SB892
VCE= --2V
2SD1207
VCE=2V
1000
Collector Current, IC -- mA
Collector Current, IC -- mA
600
0
--800
--600
--400
800
600
400
200
--200
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
0
DC Current Gain, hFE
100
7
5
100
7
5
3
2
3
5
7 --1000
2
Collector Current, IC -- mA
3
100
7
5
3
2
5
7 --100
2
3
5
7 --1000
Collector Current, IC -- mA
2
7 100
2
3
5
7 1000
3
2
3
5
ITR08653
f T -- IC
2SD1207
VCB=10V
7
2
3
5
1000
3
2
3
Collector Current, IC -- mA
Gain-Bandwidth Product, f T -- MHz
5
2
ITR08652
2SB892
VCB= --10V
7
10
--10
10
10
5
f T -- IC
1000
2SD1207
VCE=2V
2
2
2
1.2
ITR08651
3
3
7 --100
1.0
5
2
5
0.8
7
3
3
0.6
hFE -- IC
1000
5
2
0.4
Base-to-Emitter Voltage, VBE -- V
2SB892
VCE= --2V
7
10
--10
0.2
ITR08650
hFE -- IC
1000
DC Current Gain, hFE
4mA
--12
--1000
Gain-Bandwidth Product, f T -- MHz
800
0
--8
Collector-to-Emitter Voltage, VCE -- V
--1200
5mA
200
0
2SD1207
7mA
6mA
1000
Collector Current, IC -- mA
Collector Current, IC -- mA
--1000
IC -- VCE
1200
2SB892
5
3
2
100
7
5
3
2
10
10
ITR08654
Rev.0 I Page 3 of 5 I www.onsemi.com
2
3
5
7 100
2
3
5
7 1000
Collector Current, IC -- mA
2
3
ITR08655
2SB892 / 2SD1207
Cob -- VCB
2SB892
f=1MHz
7
5
3
2
10
5
3
2
10
7
7
5
--1.0
2
3
5
7
2
--10
3
5
Collector-to-Base Voltage, VCB -- V
5
1.0
7 --100
ITR08656
2
3
5
3
2
--10
5
2
--1.0
5
2
--0.1
5
5
2
7 100
ITR08657
2SD1207
IC / IB=20
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
2
10
VCE(sat) -- IC
100
2SB892
IC / IB=20
7
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
--100
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SD1207
f=1MHz
7
100
2
10
5
2
1.0
5
2
0.1
5
2
--0.01
--10
2
3
5
7 --100
2
3
5
7 --1000
Collector Current, IC -- mA
2
0.01
10
3
3
2
IC=2A
1m
op
era
ms
3
2
s
DC
10
5
0m
10
s
1.0
tio
n
0.1
5
3
2
5
7 100
2
3
5
7 1000
2
3
ITR08659
PC -- Ta
1200
Collector Dissipation, PC -- mW
ICP=4A
3
Collector Current, IC -- mA
2SB892 / 2SD1207
5
2
ITR08658
ASO
10
Collector Current, IC -- A
Cob -- VCB
100
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
2
2SB892 / 2SD1207
1000
800
600
400
200
0.01
(For PNP minus sign is omitted.)
5
3
5
7
1.0
2
3
5
7
0
10
2
3
Collector-to-Emitter Voltage, VCE --
5
7 100
V ITR08661
0
Rev.0 I Page 4 of 5 I www.onsemi.com
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08660
2SB892 / 2SD1207
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products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
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protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
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2SB892_2SD1207/D