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Jameco Part Number 1871959
TSOP12..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP12.. - series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP12.. is the standard IR remote control receiver series, supporting all
major transmission codes.
This component has not been qualified according to
automotive specifications.
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2
94 8691
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Features
Special Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
e3
• Improved shielding against electrical field
disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Improved immunity against ambient light
• Suitable burst length ≥ 10 cycles/burst
Block Diagram
Parts Table
Part
Carrier Frequency
TSOP1230
30 kHz
TSOP1233
33 kHz
TSOP1236
36 kHz
TSOP1237
36.7 kHz
TSOP1238
38 kHz
TSOP1240
40 kHz
TSOP1256
56 kHz
Application Circuit
16832
16842
30 kΩ
VS
3
Input
AGC
Band
Pass
Demodulator
OUT
Transmitter TSOPxxxx
with
TSALxxxx
Circuit
2
R1 = 100 Ω
VS
OUT
GND
+ VS
C1 =
4.7 µF
µC
VO
GND
1
PIN
Control Circuit
GND
R1 and C1 recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below VO = 3.3 V by the external circuit.
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Document Number 82013
Rev. 1.12, 19-Jan-07
TSOP12..
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Supply Voltage
Parameter
(Pin 2)
Test condition
VS
- 0.3 to + 6.0
V
Supply Current
(Pin 2)
IS
5
mA
Output Voltage
(Pin 3)
VO
- 0.3 to + 6.0
V
Output Current
(Pin 3)
IO
5
mA
Tj
100
°C
Storage Temperature Range
Tstg
- 25 to + 85
°C
Operating Temperature Range
Tamb
- 25 to + 85
°C
Junction Temperature
Unit
Power Consumption
(Tamb ≤ 85 °C)
Ptot
50
mW
Soldering Temperature
t ≤ 10 s, > 1 mm from case
Tsd
260
°C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Symbol
Min
Typ.
Max
VS = 5 V, Ev = 0
Test condition
ISD
0.8
1.2
1.5
VS = 5 V, Ev = 40 klx, sunlight
ISH
VS
Supply Voltage (Pin 2)
Transmission Distance
Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
IF = 400 mA
Output Voltage Low (Pin 3)
IOSL = 0.5 mA,Ee = 0.7 mW/m2,
f = fo, test signal see fig. 1
VOSL
Minimum Irradiance
(30 - 40 kHz)
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min
Minimum Irradiance (56 kHz)
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min
Maximum Irradiance
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max
Directivity
Angle of half transmission
distance
Document Number 82013
Rev. 1.12, 19-Jan-07
1.5
4.5
d
ϕ1/2
Unit
mA
mA
5.5
35
V
m
250
mV
0.35
0.5
mW/m2
0.4
0.6
mW/m2
30
W/m2
± 45
deg
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TSOP12..
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Test Signal
Ee
1.0
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
tpi *
* tpi
T
10/fo is recommended for optimal function
Output Signal
VO
1)
2)
VOH
16110
7/f0 < td < 15/f0
tpi - 5/f 0 < tpo < tpi + 6/f 0
VOL
tpo2 )
td1 )
t
Ton ,Toff - Output Pulse Width (ms)
t
0.9
0.8
Ton
0.7
0.6
0.5
Toff
0.4
0.3
0.2
= 950 nm,
optical test signal, fig. 3
0.1
0.0
0.1
1
16909
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.2
1.0
Output Pulse
0.8
Input Burst Duration
0.7
0.6
0.5
0.4
0.3
0.2
= 950 nm,
optical test signal, fig. 1
0.1
0.8
0.6
0.4
f = f0 ± 5 %
f (3 dB) = f0 /10
0.2
0.0
1
16908
10
100
1000 10000
Ee - Irradiance (mW/m²)
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Ee
1.0
E e min /E e - Rel. Responsivity
t po - Output Pulse Width (ms)
0.9
0.0
0.1
10
100 1000 10000
Ee - Irradiance (mW/m²)
0.7
0.9
1.1
1.3
f/f0 - Relative Frequency
16925
Figure 5. Frequency Dependence of Responsivity
Optical Test Signal
600 µs
t
600 µs
T = 60 ms
VO
94 8134
Output Signal, (see fig. 4)
VOH
VOL
Ton
Toff
t
Ee min - Threshold Irradiance (mW/m2 )
4.0
3.5
3.0
2.5
2.0
1.5
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Ambient,
= 950 nm
1.0
0.5
0.0
0.01
16911
Figure 3. Output Function
Correlation with ambient light sources:
10 W/m2 1.4 klx (Std.illum.A, T= 2855 K)
10 W/m2 8.2 klx (Daylight, T = 5900 K)
0.1
1
10
100
E - Ambient DC Irradiance (W/m 2)
Figure 6. Sensitivity in Bright Ambient
Document Number 82013
Rev. 1.12, 19-Jan-07
TSOP12..
16912
2.0
f = fo
1.5
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1
10
100
1000
VsRMS - AC Voltage on DC Supply Voltage (mV)
2.0
f(E) = f0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E - Field Strength of Disturbance (kV/m)
94 8147
Figure 8. Sensitivity vs. Electric Field Disturbances
0.6
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
0.0
- 30 - 15 0
15 30 45 60 75
16918
Tamb - Ambient Temperature (°C)
90
Figure 10. Sensitivity vs. Ambient Temperature
S ( ) rel - Relative Spectral Sensitivity
E e min - Threshold Irradiance (mW/m²)
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Ee min - Threshold Irradiance (mW/m²)
Ee min- Threshold Irradiance (mW/m²)
Vishay Semiconductors
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1150
1050
- Wavelength (nm)
94 8408
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
0.8
10°
20°
30°
Max. Envelope Duty Cycle
0.7
0.6
40°
0.5
1.0
0.4
0.9
50°
0.8
60°
0.3
0.2
f = 38 kHz, Ee = 2 mW/m2
70°
0.7
0.1
80°
0.0
0
16913
20
40
60
80
100 120
Burst Length (number of cycles/burst)
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Document Number 82013
Rev. 1.12, 19-Jan-07
0.6
95 11340p2
0.4 0.2
0
0.2
0.4 0.6
d rel - Relative Transmission Distance
Figure 12. Horizontal Directivity ϕx
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TSOP12..
Vishay Semiconductors
0°
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
d rel - Relative Transmission Distance
When a disturbance signal is applied to the TSOP12..
it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected
pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP12.. are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other frequency
• Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 14 or Figure 15).
95 11339p2
The circuit of the TSOP12.. is designed so that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator
stage and an automatic gain control are used to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
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IR Signal from fluorescent
lamp with low modulation
0
5
10
15
20
Time (ms)
16920
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
Suitable Data Format
IR Signal
Figure 13. Vertical Directivity ϕy
0
16921
10
10
15
20
Time (ms)
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
Document Number 82013
Rev. 1.12, 19-Jan-07
TSOP12..
Vishay Semiconductors
Package Dimensions in millimeters
96 12116
Document Number 82013
Rev. 1.12, 19-Jan-07
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TSOP12..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 82013
Rev. 1.12, 19-Jan-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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