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Optimizing 1200V IGBT Modules for High Frequency Applications Eric R. Motto*, John F. Donlon* Yoshikatsu Nagashima** * Powerex Incorporated, Youngwood, Pennsylvania, USA ** Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan Abstract - This paper presents a new 1200V 5th generation IGBT module that has been optimized specifically for applications requiring hard turn-on switching and operating frequencies of 15KHz to 30KHz. The module also features reduced turn-off losses compared to standard industrial devices making it suitable pure hard switching applications requiring high PWM frequencies such as sinusoidal output inverters for alternate energy utility interface and high precision industrial motor drives. I. INTRODUCTION The fundamental trade-off between turn-off switching loss (ESW(off)) and on state voltage drop (VCE(sat)) in IGBT chip design is well known. Standard industrial IGBT modules are typically optimized for motor drive and similar applications in which the carrier frequency is typically 10KHz or less. For these applications conduction losses tend to dominate so the IGBT chip is primarily optimized for low VCE(sat). Other high power industrial applications such as medical, laser, telecommunication and induction heating power supplies often require higher operating frequencies to improve performance and reduce the size of magnetic components. In these higher frequency applications dynamic losses become dominant and often limit the usable capability of the IGBT module. In 2002 a high frequency optimized 5th generation IGBT module was developed specifically for high frequency power supply applications [1]. The IGBT turn-off loss of the new device was reduced to about 25% of the standard module by adjusting the minority carrier lifetime. Unfortunately, one side effect of the carrier lifetime adjustment is increased saturation voltage which causes larger static losses. In addition, the free wheeling diode used in these devices was optimized primarily for low switching noise. These “super soft” recovery diodes exhibit a recovery current tail that produces a relatively large recovery loss (Err). The diode recovery tail current also contributes to increased turn-on losses in the opposing arm IGBT in hard switching applications. As a result, the high frequency optimized modules are most effective in applications having a soft turnon such that the turn-on and free wheel diode recovery losses are minimized by the external circuit design and operation. In high frequency applications requiring a hard turn-on the high frequency optimized device offers only a modest reduction in dynamic losses (ESW(on)+ESW(off)+Err) and because of its increased static losses the total loss may be unimproved or even larger than the standard speed module. This paper presents a new high frequency optimized industrial IGBT module designed for applications requiring hard turn-on. II. DEVICE DESIGN AND CHARACTERISTICS In the design of an IGBT chip it is possible to trade VCE(sat) for lower switching losses by adjusting the minority carrier lifetime. Figure 1 shows this trade-off for the 5th generation Figure 1: EOFF -vs- VCE(sat) Trade-Off for 1200V, 200A module (Tj=125C) 30 EOFF (mJ) 25 Standard 5 th Generation Module CM200DY -24NF New “NFM” series ” series New“NFM 20 15 High Frequency 5 th Generation Module CM200DU -24NFH 10 5 0 1.6 1-4244-0714-1/07/$20.00 ©2007 IEEE. 2.6 3.6 Vce(sat) 1254 4.6 5.6 CSTBT chip. Standard industrial devices (NF-Series) are optimized with low VCS(sat) and relatively high turn-off losses while high frequency optimized devices (NFH-Series) have very low turn-off losses and a somewhat higher VCE(sat). Recognizing that the contribution of ESW(off) to total losses will inevitably be smaller in applications having a hard turnon with substantial ESW(on) and Err losses leads to a somewhat slower optimization point than the standard high frequency device. The selected optimization for the new module (NFMSeries) is shown in figure 1. The new device has lower ESW(OFF) than the standard speed device and lower VCE(sat) than the high frequency optimized device. In addition, for hard turn-on applications a new free wheeling diode was developed to reduce the Err and ESW(ON) losses. The new diode uses a shallow P-I-N junction structure formed using epitaxial silicon wafer material to achieve fast recovery with minimal tail current. A summary of the key characteristics of Table 1: 300A, 1200V Module Characteristic Comparison (Tentetive Data) Characteristic Standard CM300DY-24NF Fast New CM300DU-24NFH CM300DC-24NFM VCE(SAT) (V) 1.9 5.0 3.0 VEC (V) 2.1 2.4 1.8 ESW(ON) (mJ) 44 31 23 ESW(OFF) (mJ) 37 10 19 Err (mJ) 27 24 17 the former standard speed device (NF-Series), fast device (NFH-Series) and the new NFM module is shown in table 1. III. DEVICE PERFORMANCE Figure 2 shows a typical resonant-mode switching circuit. Figure 2: Resonant Mode Switching Circuit Operation a. Resonant Switching with Hard Turn-Off b. Resonant Switching with Hard Turn-On 1255 Figure 3: Loss Comparison for 300A, 1200V modules switching as shown in figure 2. Standard NF-Series Standard NF-Series New NFM-Series Fast NFH-Series New NFM-Series Fast NFH-Series a. Resonant Switching with Hard Turn-Off b. Resonant Switching with Hard Turn-On Depending on the design and control technique this circuit can be operated with hard turn-off or hard turn-on switching. Figure 3 shows a comparison of losses between the standard speed, high frequency and new device for both switching modes at 30KHz. From this drawing it is clear that for the case of soft turn-on the high frequency optimized device (NFH- Series) has the lowest total losses while the new device (NFMSeries) has the lowest losses for the case of hard turn-on. The NFM module has lower total losses under the hard turn-on case because its conduction losses, turn-on loss and diode recovery losses are lower than the NFH device. On the other hand, if a soft turn-on is used the turn-off losses become the dominant loss component and the NFH device provides the lowest loss. Figure 4: Hard Switched Sinusoidal Output Inverter Losses 600A,1200V Module (Nominal Rating), IO=400ARMS, VBUS=600V, PF=0.8 1800 1600 Power Loss (W) 1400 1200 1000 800 Standard (NF-Series) 600 New (NFM-Series) 400 Fast (NFH-Series) 200 0 0 5 10 15 20 25 PW M fre que ncy (KHz) 1256 30 35 Figure 4 shows total losses versus PWM frequency for a sinusoidal output inverter having both hard turn-on and hard turn-off switching. In this figure it can be seen that new module becomes the lowest loss device above about 12KHz switching frequency. The former high frequency device (NFH-Series) is of little practical use in this application because its low turn-off losses can not compensate for its increased static losses. IV. CONCLUSION [13] E. Motto, et al., "Evaluating the Dynamic Performance of High Current IGBT Modules", PCIM/PQ 1994 [14] E. Motto, "Protecting High Current IGBT Modules From Over Current and Short Circuits", HFPC Conference 1995 [15] Eric R. Motto, et al., “New Process Technologies Improve IGBT Module Efficiency”, IEEE Industry Applications Society Conference 1995 [16] Eric R. Motto, “A New Low Inductance IGBT Module Package”, PCIM Conference 1996 A new 1200V high frequency optimized CSTBT module has been presented. The module features an optimized 5TH generation CSTBT chip with lower Vce(sat) than conventional high frequency types and lower switching losses than standard speed devices. The new module also includes an optimized epitaxial free wheeling diode to provide reduced turn-on and recovery losses. The new module provides reduced losses in high frequency applications having hard turn-on switching conditions. REFERENCES [1] J. Yamada, et al., “A Fast Switching 1200V CSTBT” IEEE Industry Applications Society Conference 2002 [2] H. Takahashi, et al., “Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) - A Novel Power Device for High Voltage Application”, The 8th International Symposium on Power Semiconductor Devices and ICs 1996 [3] E. Motto, et al., “Characteristics of a 1200V PT IGBT With Trench Gate and Local Life Time Control”, IEEE Industry Applications Society 1998 [4] H. Iwamoto, et al., “A New Punch Through IGBT Having A New N-Buffer Layer”, IEEE Industry Applications Society 1999 [5] H. Nakamura, et al., “Wide cell pitch 1200V NPT CSTBTs With Short Circuit Ruggedness”, International Symposium on Power Semiconductor Devices and ICs 2001 [6] G. Majumdar, et al., "A New Generation High Speed Low Loss IGBT Module", International Symposium on Power Semiconductor Devices and ICs 1992 [7] J Yamashita, et al., "A Study on the Short Circuit Destruction of IGBTs”, International Symposium on Power Semiconductor Devices and ICs 1993 [8] Powerex "IGBTMOD and IntellimodTM Application and Technical Data Book" PUB# 9DB-100, March 1998 [9] Majumdar, et al., "Enhancing SOAs of IGBT Modules for Hard Switching Applications", PCIM 1990 [10] Yamada, et. al., "Next Generation Power Module", International Symposium on Power Semiconductor Devices and ICs 1994 [11] M. Harada, et al., "600v Trench IGBT in Comparison with Planar IGBT", International Symposium on Power Semiconductor Devices and ICs 1994 [12] T. Iida, et al., "Low VCE(SAT) IGBT Module by New Structure - Trench", PCIM Europe 1994 1257