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Example 3.2 Solution Consider a chrome-silicon metal-semiconductor junction with Nd = 1017 cm-3 . Calculate the depletion layer width, the electric field in the silicon at the metal-semiconductor interface, the potential across the semiconductor and the capacitance per unit area for an applied voltage of -5 V. The depletion layer width equals: 2ε s (φ i − Va ) xd = qN d 2 ×11.9 × 8.85 ×10 − 14 × ( 0.3 + 5) = = 0.26 µm 1.6 × 10 −19 × 1017 where the built-in potential was already calculated in Example 3.1. The electric field in the semiconductor at the interface is: qN d x d E ( x = 0) = εs = 1.6 × 10 −19 × 1017 × 2.6 × 10 − 5 11.9 × 8.85 × 10 −14 = 4.0 ×10 5 V/cm The potential equals: φ ( x = xd ) = qN d x d2 = φ i − V a = 5 .3 V 2ε s And the capacitance per unit area is obtained from: ε 11.9 × 8.85 ×10 − 14 Cj = s = = 40 nF/cm 2 − 5 xd 2.6 × 10