Download EE8056

Course
Fabrication Technique for Semiconductor Materials
Lecturer
Heng-Kuang Lin
Credits
Master
Ph.D
Required/Elective
Elective
Level
3
Course Description
 Growths in molecular beam epitaxy (MBE):
1. Discussions on Ethics for Engineers.
2. Introduction to compound semiconductor
materials and devices
3. System, evaporation, sources, cracking,
dissociation, vapor pressure, adsorption
4. Beam monitoring, sample monitoring, vacuum
monitoring, growth control, in-situ
characterization, comparison with MOCVD
5. Doping, modulation doping, delta doping,
amphoteric doping, dopant solubility and
diffusion.
6. Surface morphology: faceting, ordering,
clustering
7. Regrowth and selective growth, groove,
masked growth, in-situ etching
 Free energies, and formation of bulk and thin film
materials
1. Reactions involving pure condensed phases
and gaseous phase
2. Free energy-composition in binary systems
3. Phase diagram in condensed solutions
4. The behavior of solutions: SiGe and GaAs
5. Diffusional and diffusionless transformations
in solids
 Layer design in real heterojunction devices
1. Superlattices, digital alloys, graded interfaces
2. Strained layer epitaxy and defects, compliant
substrates
3. Heterojunction device physics versus energy
band diagram
4. Case study: HEMT, MESFET, HBT, PIN…etc
Textbook / Handouts
 1. Herman and Sitter, “Molecular Beam Epitaxy,”




Springer, 1996.
2. J. Tsao, “Materials Fundamentals of Molecular
Beam Epitaxy,” Academic Press, 1993.
3. G. B. Stringfellow, “Organometallic Vapor-Phase
Epitaxy - Theory and Practice,” 2nd edition,
Academic Press, 1999.
4. D. R. Gaskell, “Introduction to Metallurgical
Thermodynamics” 2nd edition, McGraw-Hill,
1981
5. W. Liu, “Fundamentals of III-V Devices HBTs,
MESFETs, and HFETs/HEMTs,” Wiley, 1999.