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King Fahd University of Petroleum and Minerals
Department of Electrical Engineering
EE 203: Electronics I LAB
Experiment# 7
BJT Characteristics
Prelab
Name:Tareq khaled almoutire
ID#201262460
Lec. Sec#08
Q1: Refer to the datasheets of the transistors posted in the WebCT to fill the table below:
2N3904
2N4124
BC550
Maximum power it can dissipate at room
temperature 25ºC
625 mW
625 mW
500 mW
Maximum collector current rating
200 mA
200 mA
100 mA
40 V
25 V
45 V
-65 to +150 ºC
-55 to 150 ºC
-65 to 150 ºC
Maximum hFE (β)
300
360
800
hFE at IC=10mA
100
Emitter-to-base breakdown voltage
6V
5V
Collector-to-emitter breakdown voltage
40 V
25 V
Collector-to-base breakdown voltage
60 V
30 V
Transistor Type
Maximum collector-to-emitter voltage rating
Maximum Operating temperature
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