Download features : high voltage capability

SANPU SEMICONDUCTOR
SAN PU
13003D TRANSISTOR (NPN)
FEATURES : HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
Power Dissipation Maximum
Pcm:25W(Tamb=25℃)
Collector Current Maximum
Ic: 1.2A
Collector-Base Voltage
V(BR)cbo:600V
Operating and Storage Junction Temperature Range
TJ, Tstg:-65℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ Unless otherwise specified)
MIN
MAX
Parameter
Symbol
Test conditions
Collector-Base Breakdown Voltage
BVcbo
Collector-Emitter Breakdown Voltage
BVceo
BVebo
Icbo
Iceo
Iebo
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
Emitter-Base
Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
BASE-Emitter Saturation Voltage
Transition Frequency
FT
Storage
Ts
Time
CLASSIFICATION OF
HFE(1)
15-20
HFE(1)
20-25
25-30
UNIT
Ic=0.5mA,Ie=0
600
V
Ic=10mA,Ib=0
Ie=1mA,Ic=0
Vcb=550V, Ie=0
Vce=400V, Ib=0
Veb=9V, Ic=0
Vce=5V,Ic=100mA
Vce=5V,Ic=1mA
Ic=0.5A,Ib=0.1A
Ic=0.5A,Ib=0.1A
Vce=10V,Ic=0.2mA
f=1MHz
500
9
V
V
μA
μA
μA
Ic=250mA
1.0
10
9
10
20
20
40
0.8
1.2
5
V
V
MHz
4.0
μs
SAN PU
 The curve chart only as reference of 13003D
SANPU SEMICONDUCTOR