Download IGBT - Short-Circuit Rated

NGTB15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications. Incorporated into the device is a rugged co−packaged
reverse recovery diode with a low forward voltage.
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15 A, 650 V
VCEsat = 1.5 V
Features
•
•
•
•
•
•
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
Soft Fast Reverse Recovery Diode
5 ms Short Circuit Capability
Excellent Current versus Package Size Performance Density
This is a Pb−Free Device
C
G
Typical Applications
E
• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
C
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse limited by
TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Symbol
Value
Unit
VCES
650
V
IC
A
30
15
ICM
120
A
IF
MARKING DIAGRAM
A
IFM
120
A
Gate−emitter voltage
VGE
$20
V
Power dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ v +150°C
tSC
5
ms
Operating junction temperature range
TJ
−55 to
+150
°C
Storage temperature range
Tstg
−55 to
+150
°C
Lead temperature for soldering, 1/8” from
case for 5 seconds
TSLD
260
°C
15N60S1G
AYWW
W
117
47
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
April, 2015 − Rev. 6
E
30
15
Diode pulsed current, Tpulse limited by
TJmax
© Semiconductor Components Industries, LLC, 2015
G
C
TO−220
CASE 221A
STYLE 9
1
Device
Package
Shipping
NGTB15N60S1EG
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NGTB15N60S1E/D
NGTB15N60S1EG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction to case, for IGBT
Rating
RqJC
1.06
°C/W
Thermal resistance junction to case, for Diode
RqJC
3.76
°C/W
Thermal resistance junction to ambient
RqJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
VGE = 0 V, IC = 500 mA, TJ = −40°C
V(BR)CES
650
−
720
660
−
−
V
Collector−emitter saturation voltage
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VCEsat
1.3
1.55
1.5
1.75
1.7
1.95
V
VGE = VCE , IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 150°C
ICES
−
−
10
−
−
200
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Forward Transconductance
VCE = 20 V, IC = 15 A
gfs
−
10.1
−
S
Cies
−
1950
−
Coes
−
70
−
Cres
−
42
−
Qg
−
88
−
Qge
−
16
−
Qgc
−
42
−
td(on)
−
65
−
tr
−
28
−
td(off)
−
170
−
tf
−
140
−
Eon
−
0.550
−
Turn−off switching loss
Eoff
−
0.350
−
Total switching loss
Ets
−
0.900
−
Turn−on delay time
td(on)
−
65
−
tr
−
28
−
td(off)
−
180
−
STATIC CHARACTERISTIC
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 15 A, VGE = 15 V
Gate to collector charge
pF
nC
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
Rise time
Turn−off delay time
Fall time
TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
tf
−
260
−
Eon
−
0.650
−
Turn−off switching loss
Eoff
−
0.600
−
Total switching loss
Ets
−
1.250
−
VF
−
−
1.65
1.75
1.85
−
Turn−on switching loss
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 15 A
VGE = 0 V, IF = 15 A, TJ = 150°C
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2
V
NGTB15N60S1EG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
trr
−
270
−
ns
Qrr
−
350
−
nc
Irrm
−
5
−
A
trr
−
350
−
ns
Qrr
−
1000
−
nc
Irrm
−
7.5
−
A
DIODE CHARACTERISTIC
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/µs
TJ = 125°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NGTB15N60S1EG
TYPICAL CHARACTERISTICS
60
60
VGE = 17 V to 13 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
VGE = 11 V
50
40
30
20
VGE = 9 V
10
VGE = 7 V
0
0
1
2
3
5
4
6
7
VGE = 11 V
40
30
VGE = 9 V
20
10
VGE = 7 V
8
0
1
2
3
5
4
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
60
VGE = 17 V to 13 V
60
IC, COLLECTOR CURRENT (A)
TJ = −40°C
VGE = 11 V
50
40
30
20
VGE = 9 V
10
VGE = 7 V
0
0
1
2
3
4
5
TJ = 25°C
50
−40°C
150°C
40
30
20
10
0
7
6
0
8
2
4
6
8
10
12
14
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
10,000
IC = 30 A
2.5
2.0
Cies
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VGE = 17 V to 13 V
0
70
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
50
IC = 15 A
IC = 10 A
1.5
IC = 5 A
1.0
1000
100
Coes
0.5
Cres
0
−50
10
−20
10
40
70
100
130
160
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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NGTB15N60S1EG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
35
TJ = 25°C
30
−40°C
25
150°C
20
15
10
5
15
VCES = 480 V
10
5
0
0
0.5
0
1
1.5
VF, FORWARD VOLTAGE (V)
2
0
2.5
10
20
50
60
70
80
90 100
Figure 8. Typical Gate Charge
1000
0.7
tf
SWITCHING TIME (ns)
Eon
0.6
SWITCHING LOSS (mJ)
40
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
0.5
Eoff
0.4
0.3
VCE = 400 V
VGE = 15 V
IC = 15 A
Rg = 22 W
0.2
0.1
0
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
Rg = 22 W
1
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140 160
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1.4
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 22 W
1.0
tf
Eon
SWITCHING TIME (ns)
1.2
SWITCHING LOSS (mJ)
30
Eoff
0.8
0.6
0.4
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 22 W
0.2
0
1
8
12
16
20
24
28
32
8
12
16
20
24
28
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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5
32
NGTB15N60S1EG
TYPICAL CHARACTERISTICS
1.2
1000
0.9
tf
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
Eon
VCE = 400 V
VGE = 15 V
IC = 15 A
TJ = 150°C
Eoff
0.6
0.3
0
15
25
35
45
55
65
75
85
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
TJ = 150°C
15
25
35
45
55
65
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. Rg
Figure 14. Switching Time vs. Rg
75
85
1000
VGE = 15 V
IC = 15 A
Rg = 22 W
TJ = 150°C
0.9
tf
Eon
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
td(on)
5
Eoff
0.6
0.3
td_off
100
td_on
tr
10
VGE = 15 V
IC = 15 A
Rg = 22 W
TJ = 150°C
1
175
225
275
325
375
425
475
525
575
175 225
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
575
1000
1000
1 ms
100 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
1
5
1.2
0
td(off)
100
50 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
1
10
100
10
1
0.1
VGE = 15 V, TC = 125°C
0.01
100
1
1000
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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NGTB15N60S1EG
TYPICAL CHARACTERISTICS
THERMAL RESPONSE (ZqJC)
10
1
0.1
RqJC = 1.06
50% Duty Cycle
Ri (°C/W)
20%
10%
5%
Junction R1
Rn
C2
Cn
C1
1%
Single Pulse
0.001
0.000001
Case
Ci = ti/Ri
2%
0.01
R2
ti (sec)
0.1
0.05010
0.15051
0.33992
0.10550
7.1E−5
1.0E−4
0.002
0.003
0.00999
0.20020
0.03
0.11423
0.1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
THERMAL RESPONSE (ZqJC)
10
50% Duty Cycle
1
RqJC = 3.76
20%
10%
5%
2%
Ri (°C/W)
0.1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
1%
Single Pulse
Junction R1
Rn
Case
Ci = ti/Ri
0.01
C1
0.001
0.000001
R2
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
C2
Cn
1
Figure 20. Diode Transient Thermal Impedance
Figure 21. Test Circuit for Switching Characteristics
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7
10
ti (sec)
0.01895
0.04097
0.12956
0.1
0.20199
1.0E−7
1.0E−6
1.0E−5
7.1E−5
1.0E−4
1.62730
0.002
0.57301
0.003
0.45453
0.00498
0.40199
0.03
0.21558
0.1
100
1000
NGTB15N60S1EG
Figure 22. Definition of Turn On Waveform
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8
NGTB15N60S1EG
Figure 23. Definition of Turn Off Waveform
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9
NGTB15N60S1EG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 9:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
COLLECTOR
EMITTER
COLLECTOR
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NGTB15N60S1E/D