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AN11130
Bias module for 50 V GaN demonstration boards
Rev. 2 — 1 September 2015
Application note
Document information
Info
Content
Keywords
GaN, bias
Abstract
This application note describes a bias controller module for GaN HEMT
RF power transistors. It provides constant quiescent drain current with
temperature, special bias and power sequencing, and overcurrent
protection.
AN11130
Bias module for 50 V GaN demonstration boards
Revision history
Rev
Date
Description
v.2
20150901
Modifications
v.1
20111208
•
The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
Initial version
Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
AN11130#2
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 14
AN11130
Bias module for 50 V GaN demonstration boards
1. Introduction
GaN HEMT RF power transistors require temperature-compensated gate bias voltages,
similar to LDMOS devices, to maintain constant quiescent drain currents with
temperature. They are depletion mode devices requiring special bias and power
sequencing compared to LDMOS devices. This application note describes a bias
controller module which provides these functions, and overcurrent protection.
2. Bias sequencing
The most important consideration for DC with GaN HEMTs, is the bias sequencing. There
are two issues to consider:
• Never apply drain voltage when the gate is at 0 V, as the device draws excessive
drain current. Thus, any GaN bias controller must include sequenced drain voltage
switching.
• For a given VGS, GaN HEMTs are likely to be potentially unstable at lower VDS.
Therefore, decrease the gate voltage to below the pinch-off voltage VP (such as 3 V)
while the drain voltage is being turned on and off.
Figure 1 illustrates recommended power-up and power-down sequences for the drain and
gate voltages.
60
discharge
through
power
supply
40
20
0 VD
VG 0
−2
−4
−6
0
10
20
0
10
20
30
40
50
time (ms)
aaa-001666
(1) The typical discharge time shown is for illustration only, and is not intended as a recommendation.
It is important that VGS is held at a voltage of less than VP until VDS is less than approximately 10 V.
Fig 1.
AN11130#2
Application note
Gate and drain voltage sequence
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 14
AN11130
Bias module for 50 V GaN demonstration boards
3. Gate current
Because the GaN HEMT gate terminal is a Schottky diode, bias generators must provide
significant amounts of both positive and negative gate current:
• GaN HEMTs have higher gate leakage currents than comparable LDMOS devices.
The negative gate current can be as high as 500 A/mm of gate periphery at elevated
junction temperatures; the gate current evaluates to 5 mA for a 100 W device
operating at 200 C junction temperature.
• When the device is driven into saturation, rectified positive gate current flows into the
gate diode. At heavy RF compression, this gate current can exceed 1 mA/mm of gate
periphery causing a possible gate current of 30 mA for a 100 W device.
4. Temperature compensation
Similar to LDMOS devices, the gate threshold voltage for GaN devices is approximately
proportional to temperature. The gate threshold voltage is the voltage required to maintain
a constant quiescent drain current, which for Ampleon GaN devices, is about +1 mV/C
junction temperature. However, practical temperature compensation circuits are obliged to
monitor case temperature, where the temperature change is typically only half the junction
temperature change. Thus, the bias controller must increase VGS by about +2 mV/C.
5. Summary
The characteristics of the bias controller module described in the following section are
summarized in Table 1.
Table 1.
AN11130#2
Application note
Summary of bias controller characteristics
Drain voltage
12 V to 80 V [1]
Gate voltage
3 V to 1 V [1]
Gate voltage adjustment range
700 mV typical
Gate voltage temperature compensation
+2 mV/C typical
Gate current, negative
 10 mA
Gate current, positive
 100 mA
Gate voltage ripple
2 mV (p-p)
Switched drain current
 40 A [2]
[1]
Resistor values may have to be changed for part of range.
[2]
Dependent upon PCB layout.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
4 of 14
AN11130
Bias module for 50 V GaN demonstration boards
6. Circuit description
6.1 Negative voltage generation
The bias controller uses a switched-capacitor voltage inverter, U1, to generate a regulated
4 V from a single positive supply. The +5 V supply is generated from the high-voltage
drain supply by linear regulator U4.
U1 operates at a switching frequency of approximately 550 kHz; C3, R4, and C10 are
used to reduce output ripple to less than 2 mV (p-p).
When the output voltage is within 5 % of the 4 V set value, the REG output goes LOW.
The REG output LOW signal acts as an active-LOW (power valid) signal to enable drain
power to the GaN device.
U4
IN
+VD_IN
C9
2.2 μF
EN
8
U1
LT3010EMS8E−5
5
1
2
OUT
+5V
SENSE
C7
1 μF
VCC
R9
1
SHDN
−4V
C3
10 μF
8
C10
10 μF
LTC1261CS8−4
C1+
C4
100 nF
R4
OUT
10 Ω
10 kΩ
GND:4,9
6
C1−
2
3
GND:4
7
5
REG
POWER_VALID_N
COMP
C6
100 pF
aaa-001667
Fig 2.
+5 V and 4 V voltage generation circuit
6.2 Drain voltage switching
Most lower power HEMT bias controllers use a P-channel power MOSFET as the drain
voltage load switch. This has the advantage of simplicity, often requiring nothing more
than level-shifting transistors between the voltage inverter ‘power valid’ signal and the
MOSFET gate. However, as load currents increase above 2 A to 5 A, the required
MOSFET becomes large and expensive. Consequently, this bias controller uses a
common hot-swap controller IC, U2 to drive an inexpensive N-channel MOSFET.
AN11130#2
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 14
AN11130
Bias module for 50 V GaN demonstration boards
Qdrain
PSMN8R2−80YS
Rsense
+VD_IN
1
2
3
5
0.005 Ω
55 mV/Itrip
+VD_OUT
4
D4
R17
68.1 kΩ
BZX385−C11
U2
VCC
UV
ENABLE
R3
10 kΩ
7
1
6 GATE
LT4256−1CS8
C5
2
100 nF
TIMER
C11
100 nF
SENSE
8
5
3
R22
10 Ω
R21
75 kΩ
R23
100 Ω
R15
10 kΩ
FB
PGD
POWER_GOOD
GND:4
C1
10 nF
aaa-001668
Fig 3.
Drain voltage load switch circuit
U2 contains an internal charge pump for driving the gate of the external N-channel
MOSFET, Qdrain. It also includes a programmable ramp-up rate, and optional overcurrent
fault detection and foldback current limiting. If the voltage drop across sense resistor
Rsense exceeds 55 mV, U2 disconnects power from the drain, and leaves it latched off
until power is cycled.
Qdrain is a low-cost high-density TrenchMOS device in a small power SO8 package. It
has a typical on-resistance of less than 10 m and a drain current limit of more than 80 A.
6.3 Temperature compensation
The bias controller uses a small-signal PNP transistor (mounted in contact with the
baseplate) to monitor temperature and generate a +8 mV/C compensating voltage.
−4V
R19
3.01 kΩ
VTEMP
R7
44.2 kΩ
3
1
Qtemp
BC857B
2
R18
10 kΩ
aaa-001669
Fig 4.
AN11130#2
Application note
Temperature compensating circuit
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
6 of 14
AN11130
Bias module for 50 V GaN demonstration boards
−2.5
temperature compensation voltage (V)
−2.6
−2.7
−2.8
−2.9
−3
−3.1
−3.2
−3.3
−3.4
−3.5
0
10
20
30
40
50
60
baseplate temperature (°C)
Fig 5.
70
80
90
100
aaa-001670
Temperature compensating voltage
6.4 Gate voltage adjustment
A variable voltage derived from the 4 V supply is summed with the temperature monitor
voltage to generate a temperature-compensated gate voltage. R13 and R14 are selected
to set the desired gate voltage trim range, and R6 is selected to provide the desired
amount of temperature compensation. Figure 6 shows typical values for VGS = 1.6 V.
U3 is a dual rail-to-rail high-current operational amplifier chosen because it is stable into
any capacitive load. It can deliver more than 100 mA of output current to meet the positive
gate current requirements of most GaN HEMTs.
AN11130#2
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
7 of 14
AN11130
Bias module for 50 V GaN demonstration boards
U3
LM7321MF
3
4
5
Rg
1
VGATE
10 Ω
2
R11
100 kΩ
−4V
C8
1 μF
C9
1 μF
R20
1 kΩ
R19
3.01 kΩ
R13
2 kΩ
R6
30.1 kΩ
1
2
R5
1 kΩ
R10
R7
44.2 kΩ
10 kΩ
3
3
1
C2
100 nF
R14
2 kΩ
R18
10 kΩ
Qtemp
BC857B
2
aaa-001671
Fig 6.
Gate voltage adjustment circuit
−1
VG
pot fully CW
−1.1
pot mid-scale
pot fully CCW
−1.2
−1.3
−1.4
−1.5
−1.6
−1.7
−1.8
−1.9
−2
0
10
20
30
40
50
60
baseplate temperature (°C)
Fig 7.
70
80
90
100
aaa-001672
Gate voltage
The output impedance of the bias source is low (less than 1 ) because of the feedback
around operational amplifier U3. However, HEMT applications usually require a series
gate resistor of 5  to 20 , instead of a bias inductor, to ensure low-frequency device
stability.
Because the GaN HEMT quiescent gate current can increase at high temperatures, a
significant voltage drop can be developed across this gate resistor, increasing VGS by
200 mV or more. This can be a serious problem because the increased gate voltage can
push the HEMT operating point into a region of instability or even cause thermal runaway.
AN11130#2
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
8 of 14
AN11130
Bias module for 50 V GaN demonstration boards
One solution is to provide DC feedback from the HEMT gate terminal to the operational
amplifier inverting input, allowing it to compensate for voltage dropped across gate
resistor Rg. Feedback through R20 compensates for voltage dropped across Rg. To
minimize RF non-linearity and memory effects, make sure that 1 / (R20  C8) is less than
the lowest modulation frequency of the RF signal.
6.5 Resistor value selection
The resistor values in the schematic are for a 50 V device with a nominal VGS of 2.1 V,
+2 mV/C VGS temperature coefficient, and 11 A IDS overcurrent sense. Other nominal
operating conditions may require resistor value changes:
• R17 determines the supply voltage at which the drain is connected.
R17 = R3 (VD / 4  1), so VD = 31 V with the 68.1 k value in the design.
• R21 determines the supply voltage at which operating VGS is applied.
R21 = R15 (VD / 4.45  1), so VD(good) = 38 V with the 75.0 k value in the design.
• Rsense determines the foldback current limit. ILIMIT = 0.055 / Rsense, so ILIMIT = 11 A
with the 5 m value in the design.
6.6 Full schematic
The complete schematic of the bias controller combines the preceding subcircuits with
‘glue circuitry’ and several (possibly optional) additional convenience features.
• LEDs D1 and D2 provide visual indication of valid gate and drain voltages.
• Switch S1 allows the GaN amplifier to be placed easily in ‘standby’, where the
nominal gate voltages are applied, but drain power is disconnected.
• When S1 is set to ‘Vd on’ and the drain supply is not fully on (ramping up or down),
diode D3 and MOSFET Q3 turn on MOSFET Q2, pulling the gate voltage down to
4 V.
Table 2.
Bias module bill of materials
Component
Description
Value
C9, C12
capacitor, 100 V 10 % X7R, 1206
1 F
C7, C8
capacitor, 50 V 10 % X7R, 0805
1 F
C2, C4, C5, C11
capacitor, 50 V 10 % X7R, 0805
100 nF
C6
capacitor, 50 V 5 % NP0, 0805
100 pF
Remarks
C3, C10
capacitor, 10 V 20 % X7R, 0805
10 F
C1
capacitor, 50 V 10 % X7R, 0805
10 nF
D1
LED, green, 0805
D2
LED, yellow, 0805
D4
diode, Zener 11 V 300 mW
BZX385-C11
D3
dual diode, common-cathode
BAV74
L1
ferrite bead, 200 mA, 0805
Q1, Q2, Q4
transistor, N-ch MOS 30 V 0.8 A
Q3
transistor, P-ch MOS 30 V 0.8 A
R13, R14
resistor, 1 % 100 ppm CF, 0805
2.00 k
R5
potentiometer, 5t cermet
1 k
AN11130#2
Application note
1000 mH?
BSH103
BSS84
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Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
9 of 14
AN11130
Bias module for 50 V GaN demonstration boards
Table 2.
Bias module bill of materials
Component
Description
Value
R19
resistor, 1 % 100 ppm CF, 0805
3.01 k
R7
resistor, 1 % 100 ppm CF, 0805
44.2 k
R3, R9, R10, R12, R15,
R16, R18
resistor, 1 % 100 ppm CF, 0805
10.0 k
R6
resistor, 1 % 100 ppm CF, 0805
30.1 k
R4, R22, R24
resistor, 1 % 100 ppm CF, 0805
10.0 k
R1, R8, R20
resistor, 1 % 100 ppm CF, 0805
1.00 k
R17
resistor, 1 % 100 ppm CF, 0805
68.1 k
R23
resistor, 1 % 100 ppm CF, 0805
100 k
R2, R11
resistor, 1 % 100 ppm CF, 0805
100 k
R21
resistor, 1 % 100 ppm CF, 0805
75.0 k
S1
switch, SPDT right-angle SMD
Tyco 1437575-1
U4
voltage regulator, 5 V 100 mA
Linear LT3010EMS8E-5
U1
switching capacitor inverter
Linear LTC1261CS8-4
U2
hot swap controller
Linear LT4256-1CS8
U3
rail-rail opamp
National LM7321MF
AN11130#2
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
Remarks
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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AN11130#2
Application note
6
5
R24
4
10 Ω
3
D4
L1
BLM21BD102
U4
LT3010EMS8E−5
IN 8
C9
1 μF
C12
1 μF
EN 5
S1
1437575−1
standby
U1
LTC1261CS8−4
1 OUT
2 SENSE
+5V
C7
1 μF
R9
SHDN
3
6 OUT
VCC 1
8
3
10 kΩ
GND:4,9
C4
100 nF
C1−
7
2
5
3
REG
2
C6
100 pF
GND:4
UV
R12
1
R8
3
R2
100 kΩ
BSS84
Q3
3
1 kΩ
2
BAW56
2
3
1
D3
5
C11
100N GND:4
10 kΩ
D3
1
2
7 SENSE
R22
10 Ω
R21
75 kΩ
R23
100 Ω
R15
10 kΩ
6 GATE
2
TIMER
R1
1 kΩ
S npn mosfet
1
LT4256-1CS8
VCC 8
C5
100 nF
R3
10 kΩ
D1
HSMG−C170
green = VG on
COMP
R17
68.1 kΩ
2
Q1
BSH103
1
G switching
3
FB
PGD
C1
10 nF
Q4
BSH103
D2
HSMY−C170
yellow = VD on
1
BAW56
3
U3
LM7321MF
3
1
2
Q2
BSH103
3
5
4
2
1
C8
1 μF
R11
100 kΩ
R16
10 kΩ
10
R20
11
1 kΩ
12
-4V
R13
2 kΩ
VG
FB
C10
10 μF
R19
3.01 kΩ
R6
1
2
R10
30.1 kΩ
10 kΩ
R7
44.2 kΩ
R14
2 kΩ
7
8
3
C2
100 nF
R18
10 kΩ
9
C temperature
B compensation
E npn transistor
aaa-001673
Fig 8.
Bias module schematic
AN11130
11 of 14
© Ampleon The Netherlands B.V. 2015. All rights reserved.
R5
1 kΩ
Bias module for 50 V GaN demonstration boards
Rev. 2 — 1 September 2015
All information provided in this document is subject to legal disclaimers.
C1+
BZX384-C11
D drain
U2
1
VD on
C3
10 μF
R4
10 Ω
2
V+
AN11130
Bias module for 50 V GaN demonstration boards
7. PCB layout
aaa-001674
Fig 9.
PCB top-side layout
aaa-001675
Fig 10. PCB bottom-side layout
8. Abbreviations
Table 3.
AN11130#2
Application note
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal Oxide Semiconductor
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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Rev. 2 — 1 September 2015
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AN11130
Bias module for 50 V GaN demonstration boards
9. Legal information
9.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
9.2
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. Ampleon, its affiliates and their
suppliers expressly disclaim all warranties, whether express, implied or
statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
In no event shall Ampleon, its affiliates or their suppliers be liable to customer
for any special, indirect, consequential, punitive or incidental damages
(including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
AN11130#2
Application note
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of Ampleon, its affiliates and
their suppliers and customer’s exclusive remedy for all of the foregoing shall
be limited to actual damages incurred by customer based on reasonable
reliance up to the greater of the amount actually paid by customer for the
product or five dollars (US$5.00). The foregoing limitations, exclusions and
disclaimers shall apply to the maximum extent permitted by applicable law,
even if any remedy fails of its essential purpose.
9.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
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13 of 14
AN11130
Bias module for 50 V GaN demonstration boards
10. Contents
1
2
3
4
5
6
6.1
6.2
6.3
6.4
6.5
6.6
7
8
9
9.1
9.2
9.3
10
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Bias sequencing . . . . . . . . . . . . . . . . . . . . . . . . 3
Gate current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Temperature compensation . . . . . . . . . . . . . . . 4
Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Circuit description . . . . . . . . . . . . . . . . . . . . . . . 5
Negative voltage generation . . . . . . . . . . . . . . . 5
Drain voltage switching. . . . . . . . . . . . . . . . . . . 5
Temperature compensation . . . . . . . . . . . . . . . 6
Gate voltage adjustment. . . . . . . . . . . . . . . . . . 7
Resistor value selection . . . . . . . . . . . . . . . . . . 9
Full schematic. . . . . . . . . . . . . . . . . . . . . . . . . . 9
PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: AN11130#2