Download 8N60

8N60
MOSFET N 600V 7.5A 1,2 OHM
8N60
Power MOSFET
7.5 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
„
FEATURES
*Pb-free plating product number: 8N60L
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
8N60-x-TA3-T
8N60L-x-TA3-T
8N60-x-TF3-T
8N60L-x-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
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Packing
Tube
Tube
8N60
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
600
V
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
7.5
A
TC = 25°C
7.5
A
Continuous Drain Current
ID
TC = 100°C
4.6
A
Pulsed Drain Current (Note 1)
IDM
30
A
Single Pulsed (Note 2)
EAS
230
mJ
Avalanche Energy
14.7
mJ
Repetitive (Note 1)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
147
W
Power Dissipation
PD
TO-220F
48
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
8N60-A
8N60-B
„
THERMAL DATA
PARAMETER
SYMBOL
TO-220
TO-220F
TO-220
TO-220F
Junction-to-Ambient
Junction-to-Case
„
θJA
θJC
RATING
62.5
62.5
0.85
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
8N60-A
8N60-B
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
TEST CONDITIONS
BVDSS
VGS = 0 V, ID = 250 µA
IDSS
VDS = 600 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
IGSS
MIN TYP MAX UNIT
600
650
10
100
-100
△BVDSS/△TJ ID = 250 µA, Referenced to 25°C
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.75 A
VDS = 25 V, VGS = 0 V, f = 1MHz
VDD = 300V, ID = 7.5 A, RG = 25Ω
(Note 4, 5)
VDS= 480V,ID= 7.5A, VGS= 10 V
(Note 4, 5)
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0.7
2.0
1.0
V
V
µA
nA
nA
V/℃
4.0
1.2
V
Ω
965 1255
105 135
12
16
pF
pF
pF
16.5 45
60.5 130
81 170
64.5 140
28
36
4.5
12
ns
ns
ns
ns
nC
nC
nC
8N60
„
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 7.5 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS = 0 V, IS = 7.5 A,
dIF/dt = 100 A/µs (Note 4)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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MIN
TYP MAX UNIT
365
3.4
1.4
V
7.5
A
30
A
ns
µC
8N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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8N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Time
Fig. 4B Unclamped Inductive Switching Waveforms
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8N60
TYPICAL CHARACTERISTICS
Body Diode Forward Voltage vs. Source
Current
On-Resistance Variation vs. Drain Current
and Gate Voltage
6
10
5
VGS=10V
4
3
VGS=20V
2
1
0
Note: TJ=25℃
0
5
10
15
20
Drain Current, ID (A)
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON)
(ohm)
„
Power MOSFET
150℃
25℃
1
Notes:
1. VGS=0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
1900
1700
1500
1300
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
Ciss
12
10
VDS=300V
8
1100
900
700
Gate Charge Characteristics
Coss
VDS=120V
6
Crss
500
Notes:
300 1. V =0V
GS
100 2. f = 1MHz
0
0.1
1
VDS=480V
4
2
Note: ID=8A
0
10
Drain-SourceVoltage, VDS (V)
0
5
10
15
20
25
Total Gate Charge, QG (nC)
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30
8N60
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
1.2
2.5
1.1
2.0
1.0
1.5
1.0
0.9
Note:
1. VGS=0V
2. ID=250µA
0.8
-100
0.0
-100
-50
0
50 100 150 200
Junction Temperature, TJ (℃)
100
Note:
1. VGS=10V
2. ID=4A
0.5
-50 0
50 100 150 200
Junction Temperature, TJ (℃)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
10
Operation in This Area is Limited by RDS(on)
Drain Current, ID (A)
100µs
Drain Current, ID (A)
„
Power MOSFET
100µs
10
1ms
DC
1
10ms
Notes:
1. TJ=25℃
2. TJ=150℃
3. Single Pulse
0.1
8
6
4
2
0
1
10
100
1000
Drain-Source Voltage, VDS (V)
25
50
Transient Thermal Response
Curve
1
D=0.5
D=0.2
D=0.1
0.1 D=0.05
0.02
0.01
Single pulse
0.01
10-5
Notes:
1. θJC (t) = 0.85℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-4 10-3 10-2 10-1 100
75
100
125
Case Temperature, TC (℃)
101
Square Wave Pulse Duration, t1 (sec)
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150