Download MPS-080817P-82

MPS-080817P-82
806 to 849 MHz Low Noise Receiver Amplifier
www.mwtinc.com
Email: [email protected]
Features
Very Low Noise 1.1 dB Typ.
7.5 Volt Bias
High +44 dBm Typ. IP3
26% High Power
Added Effeciency
14.5 dB Typical Gain
The MPS-080817P-82 is a low noise , high dynamic range amplifier designed
for ultralinear receiver applications in the 806 to 849 MHz frequency range.
The circuit is matched to 50 ohm and employs a single stage GaAs FET with
internal matching to provide exceptional noise figure, 1.1 dB combined with
extremely high IP3, +44 dBm. Typical applications are cellular base station
receivers, Tower mounted LNA’s, smart antenna systems, picocell repeaters
and receiver multi-couplers.
Specifications
Electrical at 25 C, Vdd= 7.5 V, Zo= 50
Freq
SSG
P1dB
IP3
NF
VSWR
GOF
GOT
dd
PAE
Parameter
Min.
Frequency Range
806
Small Signal Gain
13
P out at 1 dB Compression
Third-order Intercept
+42
Noise Figure
Input VSWR
Gain Variation over Freq.
Gain Variation over Temp.
DC Current
Power Added Efficiency
Typical
Max
14.5
+28.0
+44.0
1.1
2.0:1
+/-0.2
- .015
330
26
849 MHz
dB
dBm
dBm
1.5 dB
2.5:1
+/-0.5 dB
dB/ C
400 mA
%
Gain vs. Frequency
Unit
16
Gain (dB)
Symbol
14
12
10
810
820
830 840
850
Frequency (MHz)
860
Noise Figure vs. Frequency
Noise Figure (dB)
2.0
Absolute Maximum Ratings
Maximum Bias Voltage
Maximum Continuous RF Input Power
Maximum Peak Input Power
Maximum Case Operating Temperature
Maximum Storage Temperature
1.5
1.0
8.0 V
480 mW
720 mW
+85 C
-65 C to +150 C
.5
810
820
830 840 850
Frequency (MHz)
860
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MPS-080817P-82
806 to 849 MHz Low Noise Receiver Amplifier
www.mwtinc.com
Email: [email protected]
Retur
n Loss vs
eturn
vs.. F
Frr equenc
equencyy
Retur
n Loss vs
eturn
vs.. F
Frr equenc
equencyy
INPUT
0
-5
Return Loss (dB)
-5
Return Loss (dB)
OUTPUT
0
-10
-15
-20
-10
-15
-20
-25
-25
-30
-30
810
820
830
840
850
860
810
820
830
Frequency (MHz)
840
Outline Dia
Diagg r ams
860
.145 MAX
.270
.028
.020 TYP.
LEAD 10
.020 TYP.
.050 TYP.
Pin
1
2
3
4
5
6
7
8
9
10
Case
LEAD 1
.200 TYP.
.270 .250
LEAD 5
.050 TYP.
.250
.430
.010 MAX TYP.
850
Frequency (MHz)
LEAD 6
Connection
N/C
N/C
RF Input
NC
N/C
N/C
N/C
RF Output, Vdd
N/C
N/C
Ground
GND.
.250 REF.
.040 TYP.
.008 TYP.
.020 TYP.
Application Circuit
C2
V
dd
CR1
RF
IN
L1
080817P
C1
C1
C1
C2
L1
CR1
100 pF
.22 uF
160 nH
8.0 V
RF
OUT
Chip Capacitor
Capacitor
Printer or Wound Coil
Zener Diode
50 Microstrip Line
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.