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InGaAs Photodiode SD012-121-011 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM DESCRIPTION FEATURES The SD012-121-011 is a high h sensitivity, low capacitance and noise, 0.3mm diameter active area InGaAs photodiode photodiode, sensitive to wavelengths in visible extended (450-1700nm) spectral range and used for sensing applications. The photodetector is assembled in a TO-46 package. • • • • RELIABILITY APPLICATIONS This API high-reliability reliability detector is in principle able to meet military test requirements (Mil-STD-750, Mil-STD-883) 883) after p proper screening and group test. Contact API for recommendations on specific test conditions and procedures. • Industrial Sensing • Security and Defense • Communication MOISTURE SENSITIVITY LEVEL ESD This device is Class 1A (HBM). API silicon light dependent resistors are classified as MSL level 1 per J-STD-020 020 allowing for unlimited floor time at temperatures less than or equal to 30°C and humidity less than or equal to 85%. Ta = 23°C non condensing ABSOLUTE MAXIMUM RATINGS SYMBOL Operating Temperature Storage Temperature Soldering Temperature * Wavelength Range Reverse Voltage Low Noise Low Dark Current and Capacitance High Sensitivity Light Detection (Visible, NIR, SWIR) MIN 0 -25 25 450 - MAX +85 +85 +240 1700 20 UNITS °C °C °C nm V *) 1/16 inch from case for 3s max. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 8-27-15 Page 1/2 © 2015 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987 987-0146 0146 • Fax (805) 484-9935 484 InGaAs Photodiode SD012-121-011 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM Ta = 23°C unless noted otherwise OPTO-ELECTRICAL PARAMETERS PARAMETER Breakdown Voltage Responsivity Responsivity Responsivity Shunt Resistance Dark Current Capacitance Rise Time (50Ω load) Noise Equivalent Power TEST CONDITIONS Ibias = 100 µA λ= 600 nm λ= 1200 nm λ= 1550 nm Vbias = 10 mV Vbias = 1V Vbias = 1V; f = 1 MHz Vbias = 1V; λ= 826 nm λ= 900 nm MIN TYP MAX 10 0.3 0.7 0.9 5 - 0.35 0.85 1.00 30 2 6 5 1.0 20 20 - UNITS V A/W A/W A/W MΩ nA pF ns -13 0.5 10 W/Hz TYPICAL PERFORMANCE SPECTRAL RESPONSE 1.2 Responsivity, A/W 1 0.8 0.6 0.4 0.2 0 400 600 800 1000 1200 1400 1600 1800 Wavelenght, nm Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 8-27-15 Page 2/2 © 2015 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935