Download Lecture 1 - GUC - German University in Cairo

ELCT503
Semiconductors
Fall 2014
Lecture 01: Introduction
Dr. Hassan Mostafa
‫ حسن مصطفى‬.‫د‬
[email protected]
ELCT 503: Semiconductors
German University in Cairo (GUC)
Course Outline

Course objectives
 This course is basically about the major microelectronics
devices that are extremely used in the last 60 years. This
includes diodes and transistors
ELCT 503: Semiconductors
German University in Cairo (GUC)
Course contents

Introduction

Semiconductors physics and basics

Physics and circuit modeling (dc & ac) of:

PN junction

BJT transistor

MOSFET transistor
ELCT 503: Semiconductors
German University in Cairo (GUC)
Course Outline

Instructor:
Dr. Hassan Mostafa
» [email protected]

Textbook:


Course Websire


S. M. Sze, “Semiconductor Devices: Physics and Technology”,
Wiley & So., ISBN 0471333727, 2001
http:// scholar.cu.edu.eg/hmostafa/classes/elct-503
Lecture time: Mondays 1st slot
ELCT 503: Semiconductors
German University in Cairo (GUC)
References

H. Craig Casey (1998).
Devices for Integrated Circuits:
Silicon and III-V Compound Semiconductors,
Wiley & So., ISBN 0471171344.

B. Streetman, S. Banerjee (1999).
Solid State Electronic Devices,
Prentice Hall, ISBN 0130255386.

R. F. Pierret (1995).
Semiconductor Device Fundamentals,
Prentice Hall, ISBN 0201543931.

D. A. Neamen (2003).
Semiconductor physics and devices:
Basic principles,
McGraw-Hill, ISBN~0072321075.

T. F. Bogart (1997).
Electronic devices and circuits,
Prentice Hall, ISBN~0133937607.
ELCT 503: Semiconductors
German University in Cairo (GUC)
Course Grading
method
%
Quizzes
15%
Lab performance
10%
Lab project / presentation
15%
Midterm exam
20%
Final exam
40%
ELCT 503: Semiconductors
German University in Cairo (GUC)
Prerequisites

ELCT 301:
Electrical Circuits I

ELCT 401:
Electrical Circuits II

COMM 402:
Electromagnetics

PHYS 202:
Theromdynamics

PHYS 301:
Atom Physics
ELCT 503: Semiconductors
German University in Cairo (GUC)
semiconductor devices
Semiconductor devices are electronic devices that are fabricated
using semiconductor materials such as Silicon, Germanium, and
Gallium Arsenide.
Semiconductor devices are available as discrete components (available
on shelf in electronics stores)
or can be integrated with a large number of similar devices onto a single
chip, called an Integrated Circuit(IC).
ELCT 503: Semiconductors
German University in Cairo (GUC)
Complementary Metal Oxide Semiconductor (CMOS)
CMOS is a technology for constructing IC’s. This technology
is used in microprocessors, microcontrollers, Memories, and other
digital logic circuits.
Microprocessor
Microcontroller
RAM
ELCT 503: Semiconductors
German University in Cairo (GUC)
Information age

The ability to fabricate billions of
individual components (transistors,
resistors, capacitors, etc.) on a silicon
chip with an area of a few cm2 has
enabled the information age.

Shrinking geometries permit more
devices to be placed in a given are of
silicon.

It is widely expected that these historical
trends will continue for at least another 510 years, resulting in Chips that contain
tens of billions of components.
ELCT 503: Semiconductors
German University in Cairo (GUC)
First Transistor from Bell Labs (1947)
ELCT 503: Semiconductors
German University in Cairo (GUC)
Kilby first IC (1958)
ELCT 503: Semiconductors
German University in Cairo (GUC)
First monolithic integrated circuit
1961
Picture shows a flipflop circuit containing
6 devices, produced in
planar technology.
Source:
R. N. Neyce, “Semiconductor
device-and-lead structure”,
U.S.Patent 2,981,877
ELCT 503: Semiconductors
German University in Cairo (GUC)
first microprocessor
1971
Picture shows a
four-bit microprocessor
Intel 4004.

10 μm technology

3 mm  4 mm

2300 MOS-FETs

108 kHz clock frequency
Source:
Intel Corporation
ELCT 503: Semiconductors
German University in Cairo (GUC)
Pentium IV processor
2001
Picture shows a ULSI
chip with 32-bit processor
Intel Pentium 4.
0.18μm CMOS technology
17.5 mm  19 mm
42 000 000 components
1.6 GHz clock freuqncy
Source:
Intel Corporation
ELCT 503: Semiconductors
German University in Cairo (GUC)
ELCT 503: Semiconductors
German University in Cairo (GUC)
ELCT 503: Semiconductors
German University in Cairo (GUC)
Moore’s Law

In 1965, Gordon Moore predicted that the number of
transistors that can be integrated on a die would double
every 18 to 14 months (i.e., grow exponentially with
time).

Amazingly visionary – million transistor/chip barrier was
crossed in the 1980’s.




2300 transistors, 1 MHz clock (Intel 4004) - 1971
16 Million transistors (Ultra Sparc III)
42 Million, 2 GHz clock (Intel P4) - 2001
Xilinx currently holds the "world-record" for an
FPGA chip containing 6.8 billion transistors
ELCT 503: Semiconductors
German University in Cairo (GUC)
Moore’s Law in Microprocessors
Transistors on microprocessors double every 2 years
1 Billion
Transistors
K
1,000,000
100,000
Pentium® III
Pentium® II
Pentium® Pro
Pentium®
i486
i386
80286
10,000
1,000
100
10
8086
Source: Intel
1
1975 1980 1985 1990 1995 2000 2005 2010
Projected
ELCT 503: Semiconductors
Courtesy, Intel
German University in Cairo (GUC)
Moore’s law scaling
ELCT 503: Semiconductors
German University in Cairo (GUC)
Moore and CMOS Scaling
“CMOS scaling will not stay forever, but, forever can be delayed”
Moore, 2003
ELCT 503: Semiconductors
German University in Cairo (GUC)
ELCT 503: Semiconductors
German University in Cairo (GUC)
Moore’s Law Challenges

Defects during the manufacturing
process (a single defect larger
than some critical size usually
means that the chip will not
function correctly)

IC manufacturing requires low
defect densities (Clean Rooms)
ELCT 503: Semiconductors
German University in Cairo (GUC)
Clean Rooms
 Clean room facility:
 Particle free walls, furniture, and accessories must be used
 Airflow through 0.3 microns filters
ELCT 503: Semiconductors
German University in Cairo (GUC)
Clean Rooms
 Clean room facility:
 Main function of clean rooms is control of particle
contamination
 Requires control of air flow, water and chemical filtrations,
human protocol
 Class N clean room means fewer than N particles (>0.5 µm) in
1 cubic foot of air
 Classes types:
 Class 10,000
 Class 1,000
 Class 100
 Class 10
ELCT 503: Semiconductors
German University in Cairo (GUC)
Clean Rooms
 Clean room facility:
Class 10,000
ELCT 503: Semiconductors
Class 1,000
Class 100
Class 10
German University in Cairo (GUC)
ELCT 503: Semiconductors
German University in Cairo (GUC)
Electronics Design Flow

Design the circuit using electronic components

Simulate your circuit using Spice

Adjust the circuit till the simulation results are correct

Draw your layout

Simulate your layout (with parasitic) using Spice

Adjust the circuit/layout till the simulation results are
correct

Send your design for tape-out

Test your chip  If not working  Repeat
ELCT 503: Semiconductors
German University in Cairo (GUC)
Model of semiconductor device
Purpose of model:

geometry for layout design

current/voltage for electrical analysis
Used formalism:

mathematical equations

current voltage characteristics

equivalent electric circuit
ELCT 503: Semiconductors
German University in Cairo (GUC)
PSpice models

Model line:
Pattern: .MODEL MODNAME D(<parameter list>)
Example: .MODEL PNDIODE1 D(IS=1.1E-15)

Model parameters
Examples: IS, RS, VJ, EG, XTI, BV, IBV, TT, CJ0,…

Element line:
Pattern: Dxxxxxx N+ N- MODNAME <area><off><>
Example: D5
15 16 PNDIODE1
ELCT 503: Semiconductors
German University in Cairo (GUC)
First letter of the element

known
R – resistor
C – capacitor
L – inductor
K – mutual inductor
E – v-controlled v-source
F – i-controlled i-source
G – v-controlled i-source
H – i-controlled v-source
I – independent i-source
V – independent v-source
T – transmission line
ELCT 503: Semiconductors

semiconductor devices
D – diode
J – J-FET
M – MOS-FET
Q – bipolar transistor
B – GaAs MES-FET
German University in Cairo (GUC)
DC model versus AC model
 Every
electronic component has dc model and
ac model
 dc
models assume that all the inputs are dc
 ac
models assume that all the inputs are ac
 dc
= large signal
 ac
= small signal
 Superposition
ELCT 503: Semiconductors
German University in Cairo (GUC)
ELCT 503: Semiconductors
German University in Cairo (GUC)