Download TSOP38G36

TSOP38G36
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Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
FEATURES
• Low output pulse jitter, optimized for RCMM
code
• Very low supply current
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against EMI
• Supply voltage: 2.5 V to 5.5 V
• Improved immunity against ambient light
19026
• Insensitive to supply voltage ripple and noise
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Pinning for TSOP38G36:
DESCRIPTION
1 = OUT, 2 = GND, 3 = VS
This product is a miniaturized receiver for infrared remote
control systems. A PIN diode and a preamplifier are
assembled on a lead frame, the epoxy package acts as an
IR filter.
The demodulated output signal can be directly decoded by
a microprocessor. The TSOP38G36 is optimized for the
usage with RCMM code with low pulse jitter.
It can suppress almost all spurious pulses from energy
saving fluorescent lamps, LCD backlighting, and plasma
TVs.
This component has not been qualified according to
automotive specifications.
PARTS TABLE
Carrier frequency
TSOP38G36 (1)
36 kHz
Package
Minicast
Pinning
1 = OUT, 2 = GND, 3 = VS
Dimensions (mm)
5.0 W x 6.95 H x 4.8 D
Mounting
Leaded
Application
Remote control
(1)
Best remote control code
BLOCK DIAGRAM
RCMM
APPLICATION CIRCUIT
17170_5
16833-13
Transmitter
with
TSALxxxx
3
1
Input
AGC
Band
pass
Demodulator
Rev. 1.0, 30-Mar-15
+ VS
C1
µC
OUT
GND
2
PIN
VS
Circuit
30 kΩ
R1
IR receiver
VO
GND
R1 and C1 are recommended for protection against EOS.
Components should be in the range of 33 Ω < R1 < 1 kΩ,
C1 > 0.1 µF.
Control circuit
1
Document Number: 82731
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TSOP38G36
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VS
-0.3 to +6
V
mA
Supply voltage
Supply current
IS
3
Output voltage
VO
-0.3 to (VS + 0.3)
V
Output current
IO
5
mA
Junction temperature
Tj
100
°C
Storage temperature range
Tstg
-25 to +85
°C
Operating temperature range
Tamb
-25 to +85
°C
Tamb ≤ 85 °C
Ptot
10
mW
t ≤ 10 s, 1 mm from case
Tsd
260
°C
Power consumption
Soldering temperature
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Supply current
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
Ev = 0, VS = 3.3 V
ISD
0.27
0.35
0.45
Ev = 40 klx, sunlight
ISH
Supply voltage
Ev = 0, test signal see fig. 1,
IR diode TSAL6200, IF = 250 mA
mW/m2,
IOSL = 0.5 mA, Ee = 0.7
test signal see fig. 1
Output voltage low
mA
2.5
5.5
d
V
40
m
VOSL
Minimum irradiance
Pulse width tolerance:
tpi - 1/f0 < tpo < tpi + 3.5/f0, test signal see fig. 1
Ee min.
Maximum irradiance
tpi - 1/f0 < tpo < tpi + 3.5/f0, test signal see fig. 1
Ee max.
Angle of half transmission distance
ϕ1/2
Directivity
mA
0.45
VS
Transmission distance
UNIT
0.2
100
mV
0.4
mW/m2
W/m2
30
± 45
deg
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, N = 6 pulses, f = f0, t = 10 ms)
0.25
tpo - Output Pulse Width (ms)
Ee
t
tpi *)
T
*) tpi ≥ 6/f0 is recommended for optimal function
Output Signal
VO
1)
3/f0 < td < 6/f0
2)
tpi - 1/f0 < tpo < tpi + 3.5/f0
VOH
Output pulse width
0.20
0.15
Input burst length
0.10
0.05
Optical test signal:
λ = 940 nm, f = 36 kHz,
N = 6 carrier cycles per burst
0
0.1
VOL
td 1)
tpo 2)
t
Fig. 1 - Output Active Low
Rev. 1.0, 30-Mar-15
1
10
100
1000
10 000
Ee - Irradiance (mW/m2)
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
2
Document Number: 82731
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TSOP38G36
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Ee min. - Threshold Irradiance (mW/m2)
Vishay Semiconductors
Optical Test Signal
Ee
600 µs
t
600 µs
t = 60 ms
94 8134
Output Signal, (see fig. 4)
VO
VOH
VOL
t off
t on
Ee min. - Threshold Irradiance (mW/m2)
ton, toff - Output Pulse Width (ms)
0.6
toff
0.4
0.3
0.2
λ = 940 nm,
optical test signal, fig. 3
0
0.1
1
10
100
1000
10 000
3.0
2.5
Wavelength of ambient
illumination: λ = 950 nm
2.0
1.5
1.0
0.5
0
0.01
0.1
1
10
100
1.0
0.9
0.8
0.7
f = f0
f = 30 kHz
f = 10 kHz
f = 100 Hz
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
ΔVS RMS - AC Voltage on DC Supply Voltage (mV)
Ee - Irradiance (mW/m2)
Fig. 4 - Output Pulse Diagram
Fig. 7 - Sensitivity vs. Supply Voltage Disturbances
1.0
Maximum Envelope Duty Cycle
1.2
Ee min./Ee - Rel. Responsivity
3.5
Fig. 6 - Sensitivity in Bright Ambient
ton
0.1
4.0
Ee - Ambient DC Irradiance (W/m2)
0.8
0.5
Correlation with
ambient light sources:
10 W/m2 = 1.4 klx
(std. ilum. A, T = 2855 K)
10 W/m2 = 8.2 klx
(daylight, T = 5900 K)
4.5
t
Fig. 3 - Output Function
0.7
5.0
1.0
0.8
0.6
0.4
f = f0 ± 5 %
f (3 dB) = f0/7
0.2
0.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.7
16926
0.9
1.1
1.3
0
f/f0 - Relative Frequency
Fig. 5 - Frequency Dependence of Responsivity
Rev. 1.0, 30-Mar-15
20
40
60
80
100
Burst Length (Number of Cycles/Burst)
Fig. 8 - Maximum Envelope Duty Cycle vs. Burst Length
3
Document Number: 82731
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TSOP38G36
Ee min. - Threshold Irradiance (mW/m2)
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Vishay Semiconductors
0°
0.50
20°
30°
0.45
0.40
0.35
40°
0.30
1.0
0.25
0.9
50°
0.8
60°
0.20
0.15
70°
0.10
0.7
80°
0.05
0
-30
-10
10
30
50
70
90
0.6
Tamb - Ambient Temperature (°C)
96 12223p2
Fig. 9 - Sensitivity vs. Ambient Temperature
1.0
0.8
0.6
0.4
0.2
94 8408
0
0.4
0.3
0.2
0.1
0
850
950
1050
1150
1
λ - Wavelength (nm)
2
3
4
5
6
VS - Supply Voltage (V)
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.0, 30-Mar-15
0.2
0.5
1.2
0
750
0.4
drel - Relative Transmission Distance
Fig. 11 - Horizontal Directivity
Ee min. - Sensitivity (mW/m2)
S (λ)rel - Relative Spectral Sensitivity
10°
Fig. 12 - Sensitivity vs. Supply Voltage
4
Document Number: 82731
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSOP38G36
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Vishay Semiconductors
SUITABLE DATA FORMAT
IR Signal
This series is designed to suppress spurious output pulses
due to noise or disturbance signals. The devices can
distinguish data signals from noise due to differences in
frequency, burst length, and envelope duty cycle. The data
signal should be close to the device’s band-pass center
frequency (36 kHz) and fulfill the conditions in the table
below.
When a data signal is applied to the product in the presence
of a disturbance, the sensitivity of the receiver is
automatically reduced by the AGC to insure that no spurious
pulses are present at the receiver’s output. Some examples
which are suppressed are:
0
5
• DC light (e.g. from tungsten bulbs sunlight)
• Continuous signals at any frequency
10
15
20
Time (ms)
16920
Fig. 13 - IR Disturbance from Fluorescent Lamp
with Low Modulation
IR Signal
• Strongly or weakly modulated patterns from fluorescent
lamps with electronic ballasts (see fig. 13 or fig. 14).
0
16921
5
10
15
20
Time (ms)
Fig. 14 - IR Disturbance from Fluorescent Lamp
with High Modulation
Rev. 1.0, 30-Mar-15
5
Document Number: 82731
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSOP38G36
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
5
4.8
(4)
2.8
(5.55)
6.95 ± 0.3
8.25 ± 0.3
R2
0.9
1.1
30.5 ± 0.5
(1.54)
0.85 max.
0.7 max.
2.54 nom.
2.54 nom.
0.5 max.
1.2 ± 0.2
Marking area
technical drawings
according to DIN
specifications
Not indicated to lerances ± 0.2
Drawing-No.: 6.550-5263.01-4
Issue: 12; 16.04.10
19009
Rev. 1.0, 30-Mar-15
R2
6
Document Number: 82731
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000