Download Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor.
LMUN5241T1G
S-LMUN5241T1G
3
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
1
2
SC-70 / SOT-323
PIN 1
R1
BASE
(INPUT)
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
•S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LMUN5241T1G
S-LMUN5241T1G
8U
Shipping
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
mW
Rating
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance –
Junction-to-Ambient
RθJA
618 (Note 1.)
403 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
280 (Note 1.)
332 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LMUN5241T1G,S-LMUN5241T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Min
Typ
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
Emitter-Base Cutoff Current
(VBE = 6.0 V)
IEBO
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
Characteristic
Max
Unit
–
100
nAdc
–
500
nAdc
–
–
0.1
mAdc
V(BR)CBO
50
–
–
Vdc
V(BR)CEO
50
–
–
Vdc
160
350
–
–
–
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA)
VCE(sat)
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 5 V, R L = 1.0 kΩ)
VOL
–
–
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
VOH
4.9
–
–
Vdc
Input Resistor
R1
70
100
130
kΩ
Resistor Ratio
R1/R2
–
–
–
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LMUN5241T1G,S-LMUN5241T1G
TYPICAL ELECTRICAL CHARACTERISTICS
1000
IC/IB = 10
150°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
10
150°C
25°C
1
−55°C
0.1
−55°C
100
VCE = 10 V
0.01
0
10
20
30
40
10
50
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
2.0
1.6
1.2
0.8
0.4
0
10
20
30
40
50
150°C
25°C
−55°C
10
1
0.1
VO = 5 V
0.01
0
4
8
12
16
20
24
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
0
1
IC, COLLECTOR CURRENT (mA)
2.4
Cob, OUTPUT CAPACITANCE (pF)
25°C
−55°C
10
25°C
150°C
1
0.1
VO = 0.2 V
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
Rev.O 3/4
28
LESHAN RADIO COMPANY, LTD.
LMUN5241T1G,S-LMUN5241T1G
SC-70 / SOT-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
DIM
L
A
B
C
D
G
H
J
K
L
N
S
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
0.032 0.040
0.80
1.00
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
Rev.O 4/4