Download C3M0120090D

C3M0120090D
VDS
900 V
ID @ 25˚C Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on)
23 A
120 mΩ
N-Channel Enhancement Mode
Features
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•
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•
•
Package
C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
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•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
•
•
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Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Lighting
Part Number
Package
Marking
C3M0120090D
TO-247-3
C3M0120090
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
900
V
VGS = 0 V, ID = 100 μA
Note
VDSmax
Drain - Source Voltage
VGSmax
Gate - Source Voltage (dynamic)
-8/+19
V
AC (f >1 Hz)
Note: 1
VGSop
Gate - Source Voltage (static)
-4/+15
V
Static
Note: 2
VGS = 15 V, TC = 25˚C
Fig. 19
ID
Continuous Drain Current
ID(pulse)
PD
TJ , Tstg
23
15
A
VGS = 15 V, TC = 100˚C
Pulsed Drain Current
50
A
Pulse width tP limited by Tjmax
Fig. 22
Power Dissipation
97
W
TC=25˚C, TJ = 150 ˚C
Fig. 20
-55 to
+150
˚C
Operating Junction and Storage Temperature
TL
Solder Temperature
260
˚C
Md
Mounting Torque
1
8.8
Nm
lbf-in
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
Value
C3M0120090D Rev. A , 03-2017
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
900
1.8
2.1
3.5
1.6
Unit
Test Conditions
V
VGS = 0 V, ID = 100 μA
V
VDS = VGS, ID = 3 mA
V
VDS = VGS, ID = 3 mA, TJ = 150ºC
IDSS
Zero Gate Voltage Drain Current
1
100
μA
VDS = 900 V, VGS = 0 V
IGSS
Gate-Source Leakage Current
10
250
nA
VGS = 15 V, VDS = 0 V
120
155
RDS(on)
Drain-Source On-State Resistance
170
7.7
gfs
Transconductance
Ciss
Input Capacitance
350
Coss
Output Capacitance
40
Crss
Reverse Transfer Capacitance
3
Eoss
Coss Stored Energy
9
EON
Turn-On Switching Energy (Body Diode FWD)
170
EOFF
Turn Off Switching Energy (Body Diode FWD)
25
td(on)
Turn-On Delay Time
27
Rise Time
10
Turn-Off Delay Time
25
Fall Time
8
Internal Gate Resistance
16
tr
td(off)
tf
RG(int)
Qgs
Gate to Source Charge
4.8
Qgd
Gate to Drain Charge
5.0
Qg
Total Gate Charge
17.3
VGS = 15 V, ID = 15 A
mΩ
VGS = 15 V, ID = 15 A, TJ = 150ºC
VDS= 20 V, IDS= 15 A
S
6.7
Note
VDS= 20 V, IDS= 15 A, TJ = 150ºC
f = 1 MHz
VAC = 25 mV
μJ
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
VGS = 0 V, VDS = 600 V
pF
Fig. 11
Fig. 16
μJ
VDS = 400 V, VGS = -4 V/15 V, ID = 15 A,
RG(ext) = 2.5Ω, L= 142 μH, TJ = 150ºC
Fig. 26,
29
ns
VDD = 400 V, VGS = -4 V/15 V
ID = 15 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Fig. 27,
29
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 400 V, VGS = -4 V/15 V
ID = 15 A
Per IEC60747-8-4 pg 21
Fig. 12
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol
VSD
IS
IS, pulse
Parameter
Typ.
Diode Forward Voltage
Max.
Unit
Test Conditions
4.8
V
VGS = -4 V, ISD = 7.5 A
4.4
V
VGS = -4 V, ISD = 7.5 A, TJ = 150 °C
Note
Fig. 8,
9, 10
Continuous Diode Forward Current
21
A
VGS = -4 V
Note 1
Diode pulse Current
50
A
VGS = -4 V, pulse width tP limited by Tjmax
Note 1
VGS = -4 V, ISD = 7.5 A, VR = 400 V
dif/dt = 900 A/µs, TJ = 150 °C
Note 1
trr
Reverse Recover time
24
ns
Qrr
Reverse Recovery Charge
115
nC
Irrm
Peak Reverse Recovery Current
6.2
A
Thermal Characteristics
Symbol
Parameter
Max.
RθJC
Thermal Resistance from Junction to Case
1.3
RθJA
Thermal Resistance From Junction to Ambient
40
Unit
Test Conditions
°C/W
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2
C3M0120090D Rev. A , 03-2017
Note
Fig. 21
Typical Performance
45
40
VGS = 15 V
35
VGS = 13 V
30
VGS = 11 V
25
20
VGS = 9 V
15
10
VGS = 7 V
5
VGS = 15 V
Conditions:
TJ = 25 °C
tp = < 200 µs
40
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
45
Conditions:
TJ = -55 °C
tp = < 200 µs
VGS = 13 V
35
VGS = 11 V
30
25
20
VGS = 9 V
15
10
VGS = 7 V
5
0
0
0
2
4
6
8
10
11
0
2
4
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
45
2.5
10
11
Conditions:
IDS = 15 A
VGS = 15 V
tp < 200 µs
VGS = 13 V
2.0
35
VGS = 11 V
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
40
8
Figure 2. Output Characteristics TJ = 25 ºC
VGS = 15 V
Conditions:
TJ = 150 °C
tp = < 200 µs
6
Drain-Source Voltage, VDS (V)
30
25
VGS = 9 V
20
15
VGS = 7 V
10
1.5
1.0
0.5
5
0.0
0
0
2
4
6
8
10
-50
11
-25
0
Figure 3. Output Characteristics TJ = 150 ºC
Conditions:
VGS = 15 V
tp < 200 µs
225
250
150
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)
TJ = 150 °C
175
TJ = -55 °C
125
TJ = 25 °C
100
75
50
25
100
125
150
225
200
VGS = 11 V
175
150
VGS = 13 V
125
100
VGS = 15 V
75
50
25
0
0
0
5
10
15
20
25
30
35
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
75
Conditions:
IDS = 15 A
tp < 200 µs
275
200
50
Figure 4. Normalized On-Resistance vs. Temperature
300
250
25
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
C3M0120090D Rev. A , 03-2017
40
45
-50
-25
0
25
50
75
100
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
125
150
Typical Performance
35
30
-7
-6
-5
-4
-3
-2
-1
0
0
-5
TJ = 150 °C
25
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
-8
Conditions:
VDS = 20 V
tp < 200 µs
TJ = 25 °C
20
TJ = -55 °C
15
10
VGS = -4 V
-10
VGS = 0 V
-15
-20
VGS = -2 V
-25
-30
5
-35
Conditions:
TJ = -55°C
tp < 200 µs
0
0
2
4
6
8
10
12
14
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-7
-6
-5
-4
-3
-2
Figure 8. Body Diode Characteristic at -55 ºC
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
-15
VGS = -2 V
-20
-25
-30
-5
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
-10
VGS = 0 V
VGS = -4 V
-10
VGS = 0 V
-15
-20
VGS = -2 V
-25
-30
-35
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
-35
Conditions:
TJ = 150°C
tp < 200 µs
-40
-45
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
4
Conditions:
IDS = 15 A
IGS = 10 mA
VDS = 400 V
TJ = 25 °C
12
-25
C3M0120090D Rev. A , 03-2017
-45
16
Conditons
VGS = VDS
IDS = 3 mA
-50
-40
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.5
0
0
-5
VGS = -4 V
-45
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
-8
-40
150
8
4
0
-4
0
4
8
12
16
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
20
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
-10
VGS = 5 V
VGS = 10 V
-20
VGS = 15 V
VGS = 0 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 0 V
0
-10
VGS = 5 V
VGS = 10 V
-20
VGS = 15 V
-30
-30
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
-40
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-6
-5
-4
-3
-2
-1
-40
Drain-Source Voltage VDS (V)
Figure 14. 3rd Quadrant Characteristic at 25 ºC
20
0
0
Drain-Source Current, IDS (A)
VGS = 0 V
VGS = 5 V
VGS = 10 V
-20
VGS = 15 V
Stored Energy, EOSS (µJ)
15
-10
10
5
-30
Conditions:
TJ = 150 °C
tp < 200 µs
0
0
-40
Drain-Source Voltage VDS (V)
100
600
700
800
900
1000
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
Capacitance (pF)
Capacitance (pF)
10
500
1000
Coss
100
400
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
300
Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
1000
200
Crss
100
Coss
10
Crss
1
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
C3M0120090D Rev. A , 03-2017
200
0
100
200
300
400
500
600
Drain-Source Voltage, VDS (V)
700
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
800
900
Typical Performance
120
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
Maximum Dissipated Power, Ptot (W)
Drain-Source Continous Current, IDS (DC) (A)
25
20
15
10
5
0
-55
-30
-5
20
45
70
95
120
100
80
60
40
20
0
145
-55
Case Temperature, TC (°C)
Drain-Source Current, IDS (A)
Junction To Case Impedance, ZthJC (oC/W)
0.5
0.3
0.1
0.05
0.02
0.01
100E-6
1E-3
10E-3
Time, tp (s)
100E-3
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
1
10
100
1000
Figure 22. Safe Operating Area
Conditions:
TJ = 25 °C
VDD = 400 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120090D
L = 142 μH
300
250
ETotal
300
EOn
100
10 µs
100 µs
Drain-Source Voltage, VDS (V)
350
200
145
0.10
0.1
Switching Loss (uJ)
Switching Loss (uJ)
400
120
100 ms
1
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120090D
L = 142 μH
500
95
1.00
Figure 21. Transient Thermal Impedance
(Junction - Case)
600
70
1 ms
0.01
10E-6
45
Limited by RDS On
10.00
SinglePulse
10E-3
1E-6
20
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
100E-3
-5
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
200
ETotal
150
EOn
100
50
EOff
0
EOff
0
0
5
10
15
20
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
6
-30
C3M0120090D Rev. A , 03-2017
25
0
5
10
15
20
Drain to Source Current, IDS (A)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 400V)
25
Typical Performance
250
Switching Loss (uJ)
250
Conditions:
TJ = 25 °C
VDD = 400 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0120090D
L = 142 μH
200
ETotal
EOn
150
100
ETotal
150
EOn
100
50
EOff
50
EOff
0
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
45
Conditions:
TJ = 25 °C
VDD = 400 V
IDS = 15 A
VGS = -4V/+15 V
FWD = C3M0120090D
L = 142 μH
40
35
30
0
25
50
75
100
125
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
td(on)
td(off)
25
20
15
tr
10
tf
5
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
7
C3M0120090D Rev. A , 03-2017
150
Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Times (ns)
Conditions:
IDS = 15 A
VDD = 400 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120090D
L = 142 μH
200
Switching Loss (uJ)
300
Figure 28. Switching Times Definition
175
Test Circuit Schematic
Q1
RG
C3M0120090D
VGS= - 4V
VDC
RG
Q2
C3M0120090D
D.U.T
Figure 29. Clamped Inductive Switching Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0120090D Rev. A , 03-2017
Package Dimensions
POS
Package TO-247-3
A
T
V
U
W
Pinout Information:
•
•
•
Pin 1 = Gate
Pin 2, 4 = Drain
Pin 3 = Source
Recommended Solder Pad Layout
TO-247-3
9
C3M0120090D Rev. A , 03-2017
Inches
Millimeters
Min
Max
Min
Max
.190
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b2
.075
.085
1.91
2.16
b3
.113
.133
2.87
3.38
b4
.113
.123
2.87
3.13
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
D2
.037
.049
0.95
1.25
E
.620
.635
15.75
16.13
E1
.516
.557
13.10
14.15
E2
.145
.201
3.68
5.10
E3
.039
.075
1.00
1.90
E4
.487
.529
12.38
13.43
e
.214 BSC
N
3
5.44 BSC
3
L
.780
.800
19.81
20.32
L1
.161
.173
4.10
4.40
ØP
.138
.144
3.51
3.65
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
9˚
11˚
9˚
11˚
U
9˚
11˚
9˚
11˚
V
2˚
8˚
2˚
8˚
W
2˚
8˚
2˚
8˚
Notes
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Copyright © 2017 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
10
C3M0120090D Rev. A, 03-2017
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power