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TGA2623
10 – 11GHz 35W GaN Power Amplifier
Applications
 X-band radar
Product Features




Frequency Range: 10 – 11GHz
PSAT: 45.5dBm @ PIN = 18dBm
P1dB: 41dBm @ Midband
PAE: >47% @ PIN = 18dBm





Large Signal Gain: 27.5dB
Small Signal Gain: 35dB
Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical
Pulsed VD: PW = 100us and DC = 10%
Chip Dimensions: 5.0 x 4.86 x 0.10 mm
Functional Block Diagram
3
2
4
5
1
6
9
10
General Description
8
7
Pad Configuration
TriQuint’s TGA2623 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2623 operates from 10 –
11GHz and provides a superior combination of power,
gain and efficiency. Achieving 35W of saturated output
power with 27.5dB of large signal gain and 47% poweradded efficiency, the TGA2623 provides the level of
performance demanded by today’s system architectures.
Depending on the system requirements, the TGA2623
can support cost saving initiatives on existing systems
while supporting next generation systems with increased
performance.
Pad No.
Symbol
1
2, 10
4, 8
3, 9
5, 7
6
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Ordering Information
Part
TGA2623
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 14 -
ECCN
3A001.b.2.b
Description
10 – 11GHz 35W GaN
Power Amplifier
Disclaimer: Subject to change without notice
www.triquint.com
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Value
Drain Voltage (VD)
40V
Gate Voltage Range (VG)
-10 to -2V
Drain Current (ID1-2)
2.3A
Drain Current (ID3)
4.3A
Gate Current (IG1-2)
-3.5 to 17.5mA
Gate Current (IG3)
-11 to 28mA
Power Dissipation (PDISS), 85°C, CW
96W
Input Power (PIN), CW, 50Ω,
24dBm
VD = 28V, 85°C
Input Power (PIN), CW, VSWR 6:1,
VD = 28V, 85°C
Channel Temperature (TCH)
Mounting Temperature (30 seconds)
Storage Temperature
Parameter
Value
Drain Voltage (VD)
Drain Current (IDQ)
Gate Voltage (VG)
28V
290mA (Total)
-2.7V (Typ.)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
20dBm
275°C
320°C
-55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 250C, VD = 28V, IDQ = 290mA, VG = -2.7V Typical, Pulsed VD: PW = 100us, DC = 10%
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Power Gain (Pin = 18dBm)
Output Power (Pin = 18dBm)
Power Added Efficiency (Pin = 18dBm)
Power @ 1dB Compression (P1dB)
Small Signal Gain Temperature Coefficient
Recommended Operating Voltage:
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
Min
Typical
10
35
>15
>10
27.5
45.5
>47
41@ Midband
-0.075
28
20
- 2 of 14 -
Max
Units
11
GHz
dB
dB
dB
dB
dBm
%
dB
dB/°C
V
32
Disclaimer: Subject to change without notice
www.triquint.com
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance (θJC)
(1)
Tbase = 85°C, Pulsed VD: PW = 100us, DC = 10%
Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 28V, ID_Drive = 3A,
PIN =22dBm, POUT = 45.3dBm, PDISS = 51W
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Tbase = 85°C, CW
Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 28V, ID_Drive = 2.94A,
PIN = 22dBm, POUT = 44.9dBm, PDISS = 52W
Median Lifetime (TM)
Value
Units
1.14
ºC/W
143
3.85 x 10^10
°C
Hrs
1.97
ºC/W
187
4.12 x 10^7
°C
Hrs
Notes:
1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuM0 (80/20) carrier using 1.5 mil AuSn.
Median Lifetime
Median Lifetime, TM (Hours)
Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET13
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (C)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 3 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Typical Performance (Small Signal)
Gain vs. Frequency vs. Temperature
45
Gain vs. Frequency vs. VD
45
40
35
35
S21 (dB)
S21 (dB)
Temp. = +25 C
40
30
25
20
30
25
+25C
15
20V
25V
28V
30V
32V
20
-40C
15
VD = 28 V, IDQ = 290mA
+85C
10
10
9
9.5
10
10.5
11
11.5
12
9
9.5
Frequency (GHz)
10
IDQ = 290mA
10.5
11
11.5
12
Frequency (GHz)
Gain vs. Frequency vs. ID
45
Temp. = +25 C
40
S21 (dB)
35
30
25
290mA
20
725mA
15
VD = 28V
10
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
Output Return Loss vs. Freq. vs. Temp.
0
0
VD = 28 V, IDQ = 290mA
-5
-10
-10
S22 (dB)
S11 (dB)
VD = 28 V, IDQ = 290mA
-5
-15
-15
-20
-20
-40C
-40C
-25
-25
+25C
+85C
+85C
-30
-30
9
9.5
10
10.5
11
11.5
9
12
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
+25C
- 4 of 14 -
Disclaimer: Subject to change without notice
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TGA2623
10 – 11GHz 35W GaN Power Amplifier
Typical Performance (Pulsed Opeartion)
Output Power vs. Frequency vs. VD
48
PIN = 18dBm
44
45
Vd=25V
Vd=28V
40
40
Vd=25V
Vd=28V
Vd=30V
Vd=32V
35
Vd=30V
38
IDQ = 290mA
Vd=32V
30
Pulsed: PW=100us, DC=10%
36
9
9.5
10
10.5
11
11.5
9
9.5
10
Temp. = +25 C
46
11.5
12
PIN = 18dBm
VD = 28V
50
44
45
42
290mA
40
725mA
PAE (%)
POUT (dBm)
11
PAE vs. Frequency vs. ID
55
PIN = 18dBm
VD = 28V
10.5
Frequency (GHz)
Output Power vs. Frequency vs. ID
Temp. = +25 C
IDQ = 290mA
Pulsed: PW=100us, DC=10%
25
12
Frequency (GHz)
48
PIN = 18dBm
Temp. = +25 C
50
PAE (%)
POUT (dBm)
Temp. = +25 C
46
42
PAE vs. Frequency vs. VD
55
38
40
290mA
35
725mA
30
Pulsed: PW=100us, DC=10%
36
9
9.5
10
10.5
11
Pulsed: PW=100us, DC=10%
11.5
25
12
9
Frequency (GHz)
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
47
PAE vs. Frequency vs. Temperature
55
VD = 28V, IDQ = 290mA
50
43
45
PAE (%)
POUT (dBm)
PIN = 18dBm
45
+25C
41
+85C
39
Pulsed: PW=100us, DC=10%
40
+25C
35
+85C
VD = 28V, IDQ = 290mA
37
30
PIN = 18dBm
Pulsed: PW=100us, DC=10%
35
25
9
9.5
10
10.5
11
11.5
12
9
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
9.5
10
10.5
11
11.5
12
Frequency (GHz)
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Typical Performance (Pulsed Operation)
47
Output Power vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
60
41
10.0GHz
39
10.5GHz
37
40
PAE (%)
POUT (dBm)
50
43
30
10.0GHz
20
10.5GHz
11.0GHz
11.0GHz
10
35
VD = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
Pulsed: PW=100us, DC=10%
0
33
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
8
Output Power vs. Frequency
14
16
18
20
22
38
Temp. = +25 C
VD = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
45
35
Psat @ Pin=18dBm
P1dB
43
Gain (dB)
POUT (dBm)
12
Power Gain vs. Input Power vs. Freq.
47
41
39
37
32
29
10.0GHz
26
10.5GHz
11GHz
23
VD = 28V, IDQ = 290mA
35
10
10.2
Temp. = +25 C
Pulsed: PW=100us, DC=10%
10.4
10.6
10.8
20
11
0
2
4
Drain Current vs. Input Power vs. Freq.
8
10
12
14
16
18
20
22
Drain Current vs. Frequency vs. Temp.
3500
PIN = 18dBm
Drain Current (mA)
Pulsed: PW=100us, DC=10%
3000
6
Input Power (dBm)
Frequency (GHz)
Drain Current (mA)
10
Input Power (dBm)
Input Power (dBm)
3500
Temp. = +25 C
VD = 28V, IDQ = 290mA
Temp. = +25 C
45
VD = 28V, IDQ = 290mA
2500
2000
10.0GHz
10.5GHz
1500
11.0GHz
1000
3000
2500
+25C
2000
+85C
1500
VD = 28V, IDQ = 290mA
1000
Temp. = +25 C
Pulsed: PW=100us, DC=10%
500
500
0
2
4
6
8
10
12
14
16
18
20
9
22
Input Power (dBm)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
9.5
10
10.5
11
11.5
12
Frequency (GHz)
- 6 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Typical Performance (CW Operation)
Output Power vs. Frequency vs. VD
47
PAE vs. Frequency vs. VD
50
Temp. = +25 C
45
45
43
40
41
PAE (%)
POUT (dBm)
Temp. = +25 C
Vd=25V
Vd=28V
39
35
Vd=25V
Vd=28V
Vd=30V
Vd=32V
30
Vd=30V
37
CW
Vd=32V
35
9
9.5
10
10.5
25
PIN = 18dBm
IDQ = 290mA
IDQ = 290mA
20
11
11.5
12
9
9.5
10
Frequency (GHz)
Temp. = +25 C
45
45
43
40
41
290mA
39
725mA
PAE (%)
POUT (dBm)
PIN = 18dBm
VD = 28V
11.5
12
PIN = 18dBm
VD = 28V
35
290mA
30
725mA
37
25
CW
CW
35
20
9
9.5
10
10.5
11
11.5
12
9
9.5
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
CW
VD = 28V, IDQ = 290mA
45
43
40
PAE (%)
45
41
+25C
39
10.5
11
11.5
12
PAE vs. Frequency vs. Temperature
50
PIN = 18dBm
10
Frequency (GHz)
47
POUT (dBm)
11
PAE vs. Frequency vs. ID
50
Temp. = +25 C
10.5
Frequency (GHz)
Output Power vs. Frequency vs. ID
47
PIN = 18dBm
CW
PIN = 18dBm
35
30
+85C
CW
+25C
+85C
37
25
VD = 28V, IDQ = 290mA
35
9
9.5
10
10.5
11
20
11.5
12
9
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
9.5
10
10.5
11
11.5
12
Frequency (GHz)
- 7 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Typical Performance (CW Operation)
47
Output Power vs. Input Power vs. Freq.
VD = 28V, IDQ = 290mA
50
43
41
39
10.0GHz
37
40
30
10.0GHz
20
10.5GHz
11.0GHz
10.5GHz
35
10
Temp. = +25 C
11.0GHz
CW
0
33
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
8
Output Power vs. Frequency
14
16
18
20
22
38
CW
Temp. = +25 C
CW
45
35
43
32
Gain (dB)
POUT (dBm)
12
Power Gain vs. Input Power vs. Freq.
47
41
Psat @ Pin=18dBm
39
P1dB
29
VD = 28V, IDQ = 290mA
10.0GHz
10.5GHz
26
11.0GHz
37
23
VD = 28V, IDQ = 290mA
Temp. = +25 C
35
20
10
10.2
10.4
10.6
10.8
11
0
2
4
Drain Current vs. Input Power vs. Freq.
VD = 28V, IDQ = 290mA
6
8
10
12
14
16
18
20
22
Input Power (dBm)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
3500
PIN = 18dBm
CW
3000
Drain Current (mA)
Drain Current (mA)
10
Input Power (dBm)
Input Power (dBm)
3500
Temp. = +25 C
VD = 28V, IDQ = 290mA
CW
PAE (%)
POUT (dBm)
45
PAE vs. Input Power vs. Freq.
60
2500
2000
10.0GHz
1500
10.5GHz
1000
11.0GHz
CW
3000
2500
2000
+25C
1500
+85C
1000
VD = 28V, IDQ = 290mA
Temp. = +25 C
500
500
0
2
4
6
8
10
12
14
16
18
20
9
22
Input Power (dBm)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
9.5
10
10.5
11
11.5
12
Frequency (GHz)
- 8 of 14 -
Disclaimer: Subject to change without notice
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TGA2623
10 – 11GHz 35W GaN Power Amplifier
Typical Performance (Linearity)
IM3 vs. Output Power vs. Frequency
0
IM5 vs. Output Power vs. Frequency
-10
VD = 28V, IDQ = 290mA, 1MHz Tone Spacing
-20
-20
-30
IM5 (dBc)
IM3 (dBc)
VD = 28V, IDQ = 290mA, 1MHz Tone Spacing
-10
-30
-40
10.0GHz
10.5GHz
11.0GHz
-50
-60
Temp. = +25 C
-40
-50
10.0GHz
10.5GHz
11.0GHz
-60
-70
Temp. = +25 C
-80
-70
20
25
30
35
40
20
45
25
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD/IDQ
0
-20
-30
IM5 (dBc)
IM3 (dBc)
-20
-30
-40
V=28V, IDQ=290mA
-60
-50
V=28V, IDQ=290mA
V=25V, IDQ=290mA
V=28V, IDQ=725mA
V=25V, IDQ=725mA
-70
Temp. = +25 C
Temp. = +25 C
-80
20
25
30
35
40
45
20
25
2ND Harmonic vs. Input Power vs. Freq.
3f0 Output Power (dBc)
-30
-40
-50
-60
10.0GHz
10.5GHz
11.0GHz
-70
-20
VD = 28V, IDQ = 290mA
Temp. = +25 C
30
35
40
45
Output Power per Tone (dBm)
Output Power per Tone (dBm)
2f0 Output Power (dBc)
45
-40
-60
-70
-20
40
Freq. = 10.5GHz, 1MHz Tone Spacing
Freq. = 10.5GHz, 1MHz Tone Spacing
V=25V, IDQ=290mA
V=28V, IDQ=725mA
V=25V, IDQ=725mA
35
IM5 vs. Output Power vs. VD/IDQ
-10
-10
-50
30
Output Power per Tone (dBm)
-80
3RD Harmonic vs. Input Power vs. Freq.
VD = 28V, IDQ = 290mA
Temp. = +25 C
-30
-40
-50
-60
-70
-80
10.0GHz
10.5GHz
-90
11.0GHz
-100
0
2
4
6
8
10
12
14
16
18
20
22
0
Input Power (dBm)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
2
4
6
8
10
12
14
16
18
20
22
Input Power (dBm)
- 9 of 14 -
Disclaimer: Subject to change without notice
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TGA2623
10 – 11GHz 35W GaN Power Amplifier
Application Circuit
C9
0.1 uF
C1
1000uF
C10
47 uF
C13 (1)
100 uF
R1
10 Ohms
C3
1000uF
C4
C2
2
VG = -2.7 V
Typical
1000pF
4
3
5
1000pF
1
6
VD = 28 V,
IDQ = 290 mA
J2
RF Out
J1
RF In
C7
10
9
8
C5
1000pF
1000pF
C8
1000uF
7
C6
1000uF
R2
10 Ohms
C14 (1)
100 uF
C11
0.1 uF
C12
47 uF
Notes:
1. Remove caps for pulse operation. These caps are part of the cable harness for CW operation.
Bias-up Procedure
Bias-down Procedure
1. Set ID limit to 3.5A, IG limit to 10mA
2. Set VG to -5.0V
3. Set VD +28V
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Adjust VG more positive until IDQ = 290mA (VG ~ -2.7V
Typical)
4. Turn off VD supply
5. Turn off VG supply
5. Apply RF signal
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 10 of 14 -
Disclaimer: Subject to change without notice
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TGA2623
10 – 11GHz 35W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
Notes:
1.
100uF/100V charge storage cap is needed on the drain. For pulsed operation this cap must be on the supply-side of
the pulse-modulator.
Bill of Materials
Reference Design
Value
Description
C1 – C8
C9, C11
C10, C12
R1 – R2
R3 – R4
1000pF
0.1uF
47uF
10Ω
0Ω
SLC, 50V
Cap, 0402, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
Res, 0402
Res, 0402
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
Manufacturer
- 11 of 14 -
Part Number
Various
Various
Various
Various
Various
Disclaimer: Subject to change without notice
www.triquint.com
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Mechanical Drawing & Bond Pad Description
2
3
4
6
1
10
5
9
8
7
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad Symbol
Pad Size
Description
1
RF In
0.150 x 0.300 RF Input; matched to 50Ω
2, 8
VG1-2
4,10
VG3
3, 9
VD1-2
5, 7
VD3
0.080 x 0.080 Gate voltage 1, bias network is required; see Application Circuit on page
10 as an example.
0.080 x 0.080 Gate voltage 3, bias network is required; see Application Circuit on page
10 as an example.
Drain voltage 1, bias network is required; see Application Circuit on page
0.150 x 0.100 10 as an example.
Drain voltage 3, bias network is required; see Application Circuit on page
0.300 x 0.150
10 as an example.
6
RF Out
0.140 x 0.400 RF Output; matched to 50Ω
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 12 of 14 -
Disclaimer: Subject to change without notice
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TGA2623
10 – 11GHz 35W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 13 of 14 -
Disclaimer: Subject to change without notice
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TGA2623
10 – 11GHz 35W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Caution! ESD-Sensitive Device
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
ESD Rating: TBD
Value:
TBD
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ECCN
US Department of Commerce: 3A001.b.2.b
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com