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CHENMKO ENTERPRISE CO.,LTD
CHEMD8GP
SURFACE MOUNT
Dual Digital Silicon Transistor
VOLTAGE 50 Volts
CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SOT-563)
* High current gain.
* Suitable for high packing density.
*
*
*
*
SOT-563
Low colloector-emitter saturation.
High saturation current capability.
Both the CHDTA144T & CHDTC144T in one package.
Built in bias resistor(R1=47kΩ, Typ. )
(1)
(5)
0.50
0.9~1.1
1.5~1.7
0.50
0.15~0.3
(4)
(3)
MARKING
1.1~1.3
* D8
0.5~0.6
0.09~0.18
CIRCUIT
6
4
1.5~1.7
R1
R1
1
SOT-563
Dimensions in millimeters
3
CHDTA144T LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
-50
V
VCEO
Collector-Emitter voltage
-50
V
VEBO
Emitter-Base voltage
-5
V
IC
Coll ector current
-100
mA
PC
Collector Power dissipation
150
mW
TSTG
Storage temperature
−55 ∼ +150
O
TJ
Junction temperature
−55 ∼ +150
O
C
140
O
C/W
RθJ-S
Thermal resistance , Note 1
Tamb ≤ 25 OC, Note 1
junction - soldering point
Note
1. Transistor mounted on an FR4 printed-circuit board.
C
2008-01
CHDTC144T LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
50
V
VCEO
Collector-Emitter voltage
50
V
VEBO
Emitter-Base voltage
5
V
IC(Max.)
Coll ector current
100
mA
PD
Power dissipation
150
mW
TSTG
Storage temperature
−55 ∼ +150
O
TJ
Junction temperature
−55 ∼ +150
O
C
140
O
C/W
RθJ-S
Tamb ≤ 25 OC, Note 1
Thermal resistance , Note 1
junction - soldering point
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHDTA144T CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
UNIT
-50.0
V
-50.0
−
−
V
BVCBO
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage IC= -1mA
BVEBO
Emitter-Base breakdown voltage
IE= -50uA
VCE(sat)
Collector-Emitter Saturation voltage
IC= -5mA; IB= -0.5mA
-5.0
−
ICBO
Collector-Base current
VCB= -50V
IEBO
Emitter-Base current
VEB= -4V
hFE
DC current gain
IC= -1mA; VCE= -5.0V
R1
fT
Input resistor
Transition frequency
IE=5mA, VCE= -10.0V
f=100MHz
=
MAX.
−
BVCEO
IC= -50uA
TY P .
−
−
−
V
−
-0.3
V
−
−
-0.5
uA
−
−
-0.5
uA
100
250
600
32.9
−
47
250
61.1
−
KΩ
MHz
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
CHDTC144T CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCBO
Collector-base breakdown voltage
BVCEO
Collector-emitter breakdown voltage IC=1.0mA
IC=50uA
MIN.
TYP.
MAX.
UNIT
50
−
−
V
V
50
−
−
BVEBO
Emitter-base breakdown voltage
IE=50uA
5.0
−
−
V
ICBO
Collector cutoff current
VCB=50V
−
−
0.5
uA
IEBO
Emitter cutoff current
VEB=4V
−
−
0.5
uA
VCE(sat)
Collector-emitter saturation voltage
IC/IB=5mA/0.5mA
−
−
0.3
V
hFE
DC current gain
IC=1mA; VCE=5.0V
100
250
600
R1
fT
Input resistor
Transition frequency
32.9
−
47
250
61.1
−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IC=5mA, VCE=10.0V
f=100MHz
KΩ
MHz
RATING CHARACTERISTIC CURVES ( CHEMD8GP )
Fig.1 DC current gain vs. collector
current
1k
VCE=-5V
DC CURRENT GAIN : hFE
500
200
100
50
Ta=100OC
25OC
-40OC
20
10
5
2
1
-100u
−1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
CHDTA144T Typical Electrical Characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
-1
lC/lB=10
-500m
-200m
-100m
-50m
-20m
100OC
25OC
-40 OC
-10m
-5m
-2m
-1m
-10u
-50u -100u
-500u -1m
COLLECTOR CURRENT : IC (A)
-5m -10m
RATING CHARACTERISTIC CURVES ( CHEMD8GP )
CHDTC144T Typical Electrical Characteristics
Fig.2 Collector-emitter voltage vs.
collector current
1k
VCE = 5V
DC CURRENT GAIN : hFE
500
200
100
Ta=100OC
25OC
-40OC
50
20
10
5
2
1
100 200
500 1m 2m
5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
COLLECsaturationTOR VOLTAGE : VCE(sat) (V)
Fig.1 DC current gain vs. collector
current
1
lO/lI=10
500m
200m
100m
Ta=100OC
25OC
-40 OC
50m
20m
10m
5m
2m
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (uA)