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Introduction to
Transmission Line Pulse
(TLP)
Overview
1. What is TLP
2. How TLP works
3. TLP measurement
4. TLP variants
5. Interpreting TLP data
6. TLP Precision
7. VF-TLP
8. Q&A
2
History
• Transmission Line Pulse
• Introduced as a possible method to emulate energy in HBM
• Determined that for a given peak current, a TLP pulse of 100ns
carries the same energy as HBM
• Same energy is produced by different voltages:
 50V TLP = 1A
 1500V HBM = 1A
3
-50
0
50
100
150
200
250
Background
• Characterization of protection structures is important
• Predict behavior for real world events
• Important parameters:
•
•
•
•
Snapback voltage
Turn on time
RON resistance
Failure point
• Must determine parameters with techniques similar to ESD
• TLP is an excellent solution
• Controlled impedance makes measurements easier
• Low duty cycle prevents heating
4
Section 1
What is TLP
5
Section 1: What is TLP
TLP Waveform
• ESD tests simulate real world events
Vol tage
• What makes TLP different than ESD?
• HBM, MM, IEC, CDM
• TLP does not simulate any real-world event
-20
• ESD tests record failure level
• “Qualification”
• TLP tests record failure level and device behavior
• “Characterization”
6
0
20
40
60
T ime (ns)
80
100
120
Section 1: Device Characterization
 What is Device Characterization?
• Describes the resistance of a device for a given stimulus
• Resistance = Voltage / Current
• Conventionally performed by increasing amplitude until failure
2.9
2.4
I D U T (A)
1.9
1.4
0.9
0.4
-0.1
• Like Curve Tracing
7
0
5
10
V D U T (V)
15
Section 1: Device Characterization
 How is TLP different than Curve Tracing?
• TLP is a short pulse
V o lta g e
V o lta g e
• Curve Tracing is DC
T im e
• Shorter pulse
• Reduced duty cycle, less heating
• Controlled Impedance
• Allows device behavior to be observed (more on this later)
8
T im e
Section 1: Device Characterization
• How is TLP the same as Curve Tracing?
TLP
V o lta g e
V o lta g e
DC Curve Trace
Time
Tim e
• Measure resistance of device with increasing voltage
• Less heat means higher voltage before failure
9
Section 1: Device Characterization
• What can I learn from Device Characterization with TLP?
• Turn-on time
0.45
0.4
0.35
• Snapback voltage
I DU T (A)
0.3
0.25
0.2
0.15
0.1
• Performance changes with rise time
0.05
0
0
2
4
6
V DUT (V)
10
8
10
12
Section 1: TLP Waveforms
 What does a TLP waveform look
like?
Vol tage
• Square pulse
TLP Waveform
-20
0
20
• Unlike ESD waveforms, TLP does not
mimic any real world event
HBM Waveform
11
40
60
T ime (ns)
MM Waveform
80
100
120
Section 1: TLP Waveforms
 What variations are there for TLP waveforms?
Vol tage
• Pulse Width
TLP Waveform
• 100ns
• 30ns – 500ns
• VF-TLP: 1ns – 10ns
Pulse Width
-20
0
20
40
60
80
100
T ime (ns)
TLP Waveform
TLP Waveform
V o lta g e
• 0.2ns – 10ns
V o lta g e
• Rise Time
Rise Time
Rise Time
-20
0
20
40
60
T im e (ns )
12
80
100
120
-20
0
20
40
60
T im e (ns )
80
100
120
120
 How do these variations affect
the TLP test?
• Pulse Width
V o lta g e
Section 1: TLP Waveforms
• Energy under the curve
Pulse Width
-20
0
20
40
60
80
100
120
• Rise Time
• Device reaction
V o lta g e
T im e (ns )
Rise Time
-20
0
T im e (ns )
13
20
Section 1: Devices for TLP Testing
• What kinds of packages can be tested?
• Package Level
• Wafer Level
14
Section 2
How TLP Works
• How TLP pulses are generated
15
Section 2: How TLP Works
• How is a TLP waveform generated?
• Transmission Line connected to power supply
• Called Charge Line
• Length proportional
to pulse width
• Power supply charges the cable
16
Section 2: How TLP Works
• How is a TLP waveform generated?
• DUT lies at end of another transmission line
• Switch closes
• Charge exits Charge Line, propagates towards DUT
17
Section 2: How TLP Works
 How is a TLP waveform generated?
• Square waveform
V o lta g e
• Charge Line behaves as a storage device
-20
0
20
40
60
T im e (ns )
18
80
100 120
Section 2: How TLP Works
• What happens when the waveform hits the DUT?
• Recap: TLP is a short-duration pulse in a controlled-impedance environment
• Behaves like an RF signal
• RF signal behavior
• Propagates until impedance changes
19
Section 2: How TLP Works
• How is resistance measured with a TLP pulse?
• Square pulse, perceive it as a short-duration Curve Trace
DC Curve Trace
• Voltage and Current probes measure the DUT
20
TLP
Section 2: How TLP Works
 How is resistance measured with a TLP pulse?
• Plateau of waveforms are averaged
• Device allowed to settle into “quasi-static” state
Current Probe Waveform
V o lta g e
C ur r e nt
Voltage Probe Waveform
-20
0
20
40
60
T im e (ns )
21
80
100
120
-20
0
20
40
60
T im e (ns )
80
100
120
Section 2: How TLP Works
• Why use both a Voltage probe and a Current probe?
Current Probe Waveform
Volt ag e
Curre nt
Voltage Probe Waveform
-20
0
20
40
60
80
100
120
-20
Time (n s )
0
20
40
T im e (ns )
• It is possible to calculate DUT resistance with only 1 probe
• VDUT = VPulse – (IDUT * ZTLP)
• IDUT = (VPulse – VDUT) / ZTLP
• Not desirable because extremes are noisy
22
60
80
100
120
Section 2: How TLP Works
 Sequential TLP pulses produces an I/V Curve
OPEN Circuit
SHORT Circuit
0.6
1. 9
1. 4
I DU T (A )
I DU T (A )
0.5
0.9
0.4
0.3
0.2
0.4
0.1
- 0.1
0
0
5
10
15
20
25
30
0
0.2
0.4
V DU T (V )
0.4
0.35
0.2
I DU T (A )
I DU T (A )
1
Snapback Device
0.45
0.25
0.15
0.1
0.05
0.3
0.25
0.2
0 . 15
0.1
0.05
0
0
5
10
15
V DU T (V )
23
0.8
V DU T (V )
Resistor
0.3
0.6
20
25
30
0
0
2
4
6
V DU T (V )
8
10
12
Section 2: How TLP Works
• How is the Pulse Width changed?
• Length of cable
 How is the Rise Time changed?
• Low-pass filter added
LP
24
Section 3
TLP Measurement
• How devices are measured
25
Section 3: TLP Measurement
• Measurement Goals
• Capture Voltage at the DUT
• Capture Current through the DUT
26
Section 3: TLP Measurement
• Equipment to capture V and I
Voltage Probe
Oscilloscope
Current Probe
27
Section 3: TLP Measurement
• Equipment to deliver TLP pulse to DUT
Wafer Level
3
1.
DUT (on wafer)
2.
TLP Pulse delivery cable
3.
TLP Pulse delivery probe
4.
Ground Probe
5.
Ground Braid
2
5
1
Package Level
1.
DUT in socket
2.
TLP Pulse delivery cable
3.
Grounded pin
3
28
4
Section 3: TLP Measurement
• Ideally, V and I probes are directly on DUT
• Direct placement not possible
V/I Probes
29
Section 3: TLP Measurement
• Although probes are not at DUT, measurements are possible
V/I Probes
• Controlled impedance
• Waveform observable any place along path
• Time Domain Reflection (TDR)
30
Section 3: TLP Measurement
• How are measurements accomplished away from DUT?
V/I Probes
• Incident and Reflected waveforms
• Adding the waveforms reproduces DUT measurement
• Incident and Reflected waveforms are recorded separately (TDR-S)
31
Section 3: TLP Measurement
Reflected
Waveform
Polarity
DUT Ω > ZTLP
DUT Ω < ZTLP
DUT Ω = ZTLP
(Example: Open Circuit)
(Example: Short Circuit)
(Example: 50 Ω Resistor)
Positive Reflection
Negative Reflection
No Reflection
Negative Reflection
Positive Reflection
No Reflection
Voltage
Waveform
Current
Waveform
32
Section 3: TLP Measurement
• TDR-S performs waveform addition with software
V/I Probes
 Waveform addition can also be done in the TLP circuit
V/I Probes
33
Section 3: TLP Measurement
• Overlapping waveforms
V/I Probes
• Incident and Reflected overlap, add together
• Overlapped waveform plateau reproduces DUT waveform
34
Section 4
TLP Variants
35
Section 4: Importance of Impedance
 Why vary the impedance?
• Low Impedance
• More current flow for a given voltage
• More voltage amplitude
• High Impedance
• Less current flow for a given voltage
• Less voltage amplitude
36
Section 4: TLP Variants
• TLP circuit characteristics up to this point
• 50 Ω Impedance
• One stress-pin
• One ground-pin
Incident
Pulser
Reflected
• Time Domain Reflection (TDR)
• TDR-O
• TDR-S
V and I to
Scope
Absorbed
• Variations alter the system impedance and grounding style
37
D
U
T
Section 4: TLP Variants
• Time Domain Transmission (TDT)
• 25Ω system impedance
Incident
Scope Ch3
Pulser
Reflected
V and I to
Scope
38
Absorbed
Transmitted
D
U
T
Section 4: TLP Variants
• Time Domain Reflection and Transmission (TDR-T)
• DUT in series with pulse transmission path
• 100Ω Impedance
Incident
Pulser
Reflected
V and I to
Scope
39
Scope Ch3
DUT
Absorption
Transmitted
Section 4: TLP Variants
• High-Z Time Domain Reflection and Transmission (TDR-T)
• DUT in series with pulse transmission path
• 500Ω, 1kΩ Impedance
High-Z Ω
Incident
Pulser
Reflected
V and I to
Scope
40
Scope Ch3
DUT
Absorption
Transmitted
Section 5
Interpreting TLP Data
41
Section 5: Interpreting TLP I/V Curves
0.45
0.4
ID U T (A)
0.35
• What information do TLP I/V
Curves provide?
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
8
10
12
V D U T (V)
Voltage Waveform
C ur r e nt
V o lta g e
• What information do TLP
waveforms provide
-20
0
20
40
60
T im e (ns )
42
Current Waveform
80
100
120
-20
0
20
40
60
T im e (ns )
80
100 120
Section 5: Interpreting TLP I/V Curves
• Device: Resistor
• Ω is constant no matter what
Resistor
0.3
voltage is applied
I DUT (A)
0.25
0.2
0.15
0.1
0.05
0
0
43
5
10
15
V DUT (V)
20
25
30
Section 5: Interpreting TLP I/V Curves
0.5
• Breakdown Voltage
0.3
0.4
0.2
0.3
I DU T (A )
• Turn-on Voltage
0.5
I DU T (A )
• Device: Zener Diode
0.4
0.2
0.1
0.1
0
0
- 0.1
- 0.1
0
0
2
44
2
6
6
8
8
10
10
DU T (V )
VVDU
T (V )
0.05
0
- 0.05
I DU T (A )
- 0.1
- 0 . 15
- 0.2
- 0.25
- 0.3
- 0.35
- 0.4
- 15
- 10
-5
V DU T (V )
44
0
Section 5: Interpreting TLP I/V Curves
• Device: Snapback Protection
Structure
0.45
1. Low Voltage TLP Pulses
•
Open Circuit
0.35
2. Snapback Threshold
3. On Resistance
4. Failure Level
•
0.3
Begins conducting current
Peak Current
I DU T (A)
•
4
0.4
3
0.25
0.2
0.15
0.1
2
0.05
0
1
0
2
4
6
V DUT (V)
45
8
10
12
Section 5: Interpreting TLP Data
Begin Test Procedure
• How is failure detected?
• DC leakage test after
each TLP pulse
Apply stress pulse
to the DUT
Record Voltage &
Current waveforms
DC
Leakag
e test
PASS
Increase stress
pulse amplitude
NO
Max
pulse
amplitud
e
reached?
YES
Stop
46
FAIL
Section 5: Interpreting TLP Data
• How is failure detected?
SourceMeter, etc.
TLP Pulser
D
U
T
V & I to Scope
SourceMeter, etc.
TLP Pulser
D
U
T
V & I to Scope
47
Section 5: Interpreting TLP Data
• How is failure detected?
I Leakage (A)
0.0001
• DC Leak Test
0.001
0.01
0.1
1
1.2
I DU T (A)
• Force 14V
• 10mA Compliance
• >9mA Failure
1
0.8
IV Chart
0.6
Leakage (A)
0.4
0.2
0
-0.2
-2
0
2
4
6
V DUT (V)
48
8
10
12
14
• Precise amount of energy under curve
• Controlled impedance circuit
• Conservation of energy
V o lta g e
Section 5: Load Lines
-20
• Pulsed = VDUT + (IDUT * ZTLP)
• For a given TLP Amplitude, the
measured V and I will always reside
on that Amplitude’s Load Line
0
20
40
60
80
100 120
T im e (ns )
IDUT
Load Line
VDUT
49
Section 5: Load Lines
 Open Circuit:
 Short Circuit:
50
VPulse
VDUT
IDUT
50
50
0
100
100
0
150
150
0
200
200
0
250
250
0
VPulse
VDUT
IDUT
50
0
1
100
0
2
150
0
3
200
0
4
250
0
5
IDUT
VDUT
IDUT
VDUT
Section 5: Load Lines
 50Ω Circuit:
 Snapback Device:
51
VPulse
VDUT
IDUT
50
25
0.5
100
50
1
150
75
1.5
200
100
2
250
125
2.5
VPulse
VDUT
IDUT
50
50
0
100
100
0
150
150
0
200
60
2.8
250
70
3.6
IDUT
VDUT
IDUT
VDUT
Section 5: Load Lines and System Impedance
• How does system impedance affect the Load Line?
• Low Impedance
• More current flow for a given voltage
IDUT
• High Impedance
• Less current flow for a given voltage
50Ω
5 --
250Ω
4 --
• VPulse = VDUT + (IDUT * ZTLP)
• IDUT = (VPulse - VDUT) / ZTLP
3 --
2 --
1 --
52
|
|
|
|
|
50
100
150
200
250
VDUT
Section 5: System Impedance
• Why would I want to change the system impedance?
• Snapback device recap:
• Voltage triggered
• Fails by peak current
• What if Snapback device
has high trigger voltage,
low peak current?
IDUT
50Ω
5 --
250Ω
4 --
3 --
2 --
• 250V Trigger Voltage
• 5A peak current
53
1 --
|
|
|
|
|
50
100
150
200
250
VDUT
Section 5: System Impedance
• Characteristics of High Impedance
• Longer settling time
• Time Constant = ZTLP * CDUT
50 Ω
• Unstable turn-on region
• Enough Voltage to turn-on
• Not enough Current to remain on
54
500 Ω
1000 Ω
Section 5: Quasi-Static Region
• What defines the “quasi-static” region?
Quasi-Static
• After transient response has settled
Transient
• What if the device never settles?
0.11
80
80
70
70
60
60
30
30%
0.07
40%
50%
0.05
60%
70%
0.03
80%
50
50
40
I D UT (A)
0.09
40
30
0.01
-0.01
-1
4
9
V D UT (V)
55
14
Section 5: Transient Region
• Does the transient response tell me anything?
• Turn-on time
Zener Waveform (TDR-S)
Volt ag e
• Capacitance
-20
20
60
100
140
180
Time (n s )
56
220
260
300
Section 6
TLP Accuracy
• Understand limitations
• Optimize measurements
57
Section 6: TLP Accuracy
• Misconception: TLP is as precise as DC curve tracing
• What affects the accuracy of TLP measurements?
• Short duration means smaller sample size
• Measurement instrument limitations
• Parasitics and noise
• Contact resistance
• How are these limitations addressed?
58
Section 6: TLP Accuracy – How Are Limitations Addressed?
 Oscilloscope: Bandwidth
500Mhz Bandwidth
6Ghz Bandwidth
Sample Rate
-1.5
0.5
2.5
4.5
T im e (ns )
59
6.5
-1.5
0.5
2.5
4.5
Time (ns)
6.5
Section 6: TLP Accuracy – How Are Limitations Addressed?
 Oscilloscope: Sampling rate
500 MHz, 5 GS
Voltage
Vol tage
6 GHz, 20 GS
Sample Rate
-1.5
0.5
2.5
4.5
T ime (ns)
60
6.5
-1.5
0.5
2.5
4.5
Time (ns )
6.5
Section 6: TLP Accuracy – How Are Limitations Addressed?
 Oscilloscope: Signal digitization optimization
• 8 bits of resolution = 256 possible levels
TDR-O: Optimized Quasi-Static Region
15
250
225
200
175
150
125
100
75
50
25
0
-25
-50
-75
-100
10
Volt ag e
Volt ag e
TDR-O: No Optimization
0
-5
-10
-10
40
Time (n s )
61
5
90
-10
40
Time (n s )
90
Section 6: TLP Accuracy – How Are Limitations Addressed?
 Oscilloscope: Signal digitization optimization
8
7
I D UT (A)
6
5
No Adaptive Ranging
4
Adaptive Ranging
3
2
1
0
-1
-0.5
0
V D UT (V)
62
0.5
1
Section 6: TLP Accuracy – How Are Limitations Addressed?
 Oscilloscope: Signal digitization optimization
TDR-S: No Optim ization Possible
250
V o lta g e
150
50
-50
-150
-250
-20
30
80
130
180
230
T im e (ns )
• Overlapped waveform advantageous for best resolution
63
Section 6: TLP Accuracy – How Are Limitations Addressed?
• Parasitics:
• Factor out from DUT measurement
UNCORRECTED Open Circuit
0.5
0.4
0.4
I D U T (A)
I D U T (A)
CORRECTED Open Circuit
0.5
0.3
0.2
0.3
0.2
0.1
0.1
0
0
0
5
10
15
20
0
25
5
10
UNCORRECTED Short Circuit
30
0.4
I D U T (A)
I D U T (A)
25
CORRECTED Short Circuit
0.5
0.4
0.3
0.2
0.3
0.2
0.1
0.1
0
0
0
0.5
1
V D U T (V)
64
20
V D U T (V)
V D U T (V)
0.5
15
1.5
2
0
0.5
1
V D U T (V)
1.5
2
Section 6: TLP Accuracy – How Are Limitations Addressed?
• Noise:
• Multiple pulses
Voltage Waveform
-20
0
20
40
60
Time (ns)
Averaged
65
80
100
120
Section 6: TLP Accuracy – How Are Limitations Addressed?
• Contact Resistance
• Changes on each touchdown
• 4-point TLP (Kelvin)
• Contact resistance removed
Scope
V+
V-
I V
Ω
Ω
+
H_ V
DUT
66
Section 7
VF-TLP
• Similarities and differences
• Additional requirements
67
Section 7: VF-TLP
• What makes VF-TLP different?
• Short pulse width
• 1ns – 10ns
• Transient response emphasized
• Mimics CDM event
68
• Fast rise time
• 100ps – 200ps
Section 7: VF-TLP
• Additional requirements for VF-TLP?
TLP Waveform
• Oscilloscope bandwidth
• Oscilloscope sampling rate
V
• 200ps rise time = 5 GHz
• 1ns @ 20GS/sec = 20 samples
-0.25
0
0.25
0.5
Tim e (ns )
69
0.75
1
1.25
Section 7: VF-TLP
• Additional requirements for VF-TLP?
• More sensitive to parasitics
• Wafer-level only
• RF-rated probes recommended
Package Level
70
Coax Wafer Probe - 4 GHz
RF Wafer Probe - 40 GHz
Additional Topics
• How do I power up my device during TLP?
• DC BIAS supplies can be added
TLP Pulser
D
G
V & I to Scope
71
S
DC Supply
Additional Topics
• Does TLP correlate to HBM?
• Does VF-TLP correlate to CDM?
• Why use TLP instead of a TDR machine, or solid state pulse
generator?
• TLP Circuit is a closed system, will reflections continue
indefinitely?
72
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