Download LF151 LF251

LF151
LF251 - LF351
WIDE BANDWIDTH
SINGLE J-FET OPERATIONAL AMPLIFIERS
..
..
.
..
.
LOW POWER CONSUMPTION
WIDE COMMON-MODE (UP TO VCC+) AND
DIFFERENTIAL VOLTAGE RANGE
LOW INPUT BIAS AND OFFSET CURRENT
OUTPUT SHORT-CIRCUIT PROTECTION
HIGH INPUT IMPEDANCE J–FET INPUT
STAGE
INTERNAL FREQUENCY COMPENSATION
LATCH UP FREE OPERATION
HIGH SLEW RATE : 16V/µs (typ)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
DESCRIPTION
ORDER CODES
Part Number
Temperature
Package
N
D
LF351
0 C, +70 C
•
•
LF251
–40oC, +105oC
•
•
LF151
–55 C, +125 C
•
•
o
o
o
o
151-01.TBL
These circuits are high speed J–FET input single
operationalamplifiers incorporatingwell matched,high
voltage J–FET and bipolar transistors in a monolithic
integrated circuit.
The devicesfeaturehigh slew rates, low input bias and
offset currents, and low offset voltage temperature
coefficient.
PIN CONNECTIONS (top view)
November 1995
1
8
2
7
3
6
4
5
1
2
3
4
5
6
7
8
- Offset Null 1
- Inverting input
- Non-inverting input
- VCC- Offset Null 2
- Output
- VCC+
- N.C.
1/9
LF151 - LF251 - LF351
SCHEMATIC DIAGRAM
V
CC
Non-inverting
inpu t
Inverting
inpu t
100 Ω
200 Ω
Output
100 Ω
30k
8.2k
1.3k
1.3k
35 k
35k
100 Ω
Off set Null1
151-03.EPS
V CC
Offset Null2
INPUT OFFSET VOLTAGE NULL CIRCUITS
LF351
N1
N2
151-04.EPS
100k Ω
V CC
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Supply Voltage - (note 1)
±18
V
Vi
Input Voltage - (note 3)
±15
V
Vid
Differential Input Voltage - (note 2)
±30
V
Ptot
Power Dissipation
680
mW
VCC
Output Short-circuit Duration - (note 4)
Toper
Operating Free Air Temperature Range
Tstg
Storage Temperature Range
Notes :
2/9
Value
Infinite
LF351
LF251
LF151
0 to 70
–40 to 105
–55 to 125
o
–65 to 150
o
C
C
1. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the
zero reference level is the midpoint between VCC+ and VCC–.
2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less.
4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the
dissipation rating is not exceeded.
151-02.TBL
Symbol
LF151 - LF251 - LF351
ELECTRICAL CHARACTERISTICS
VCC = ±15V, Tamb = 25oC (unless otherwise specified)
Vio
DV io
Iio
Iib
Avd
SVR
ICC
LF151 - LF251 - LF351
Parameter
Min.
Max.
Input Offset Voltage (R S = 10kΩ)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
3
10
13
Input Offset Voltage Drift
10
Input Offset Current *
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
5
100
4
pA
nA
Input Bias Current *
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
20
200
20
pA
nA
mV
Large Signal Voltage Gain (RL = 2kΩ, VO = ±10V)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
50
25
200
Supply Voltage Rejection Ratio (R S = 10kΩ)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
80
80
86
dB
Supply Current (no load)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
mA
1.4
Input Common Mode Voltage Range
±11
+15
-12
CMR
Common Mode Rejection Ratio (RS = 10kΩ)
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
70
70
86
Output Short-circuit Current
o
Tamb = 25 C
Tmin. ≤ Tamb ≤ Tmax.
10
10
40
10
12
10
12
12
13.5
12
16
±VOPP
Output Voltage Swing
Tamb = 25oC
Tmin. ≤ Tamb ≤ Tmax.
SR
tr
KOV
GBP
Ri
THD
en
∅m
µV/oC
V/mV
Vicm
Ios
Unit
Typ.
3.4
3.4
V
dB
mA
60
60
V
RL
RL
RL
RL
=
=
=
=
2kΩ
10kΩ
2kΩ
10kΩ
Slew Rate
(Vi = 10V, R L = 2kΩ, C L = 100pF, T amb = 25oC, unity gain)
V/µs
Rise Time
o
(Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = 25 C, unity gain)
0.1
Overshoot
o
(Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = 25 C, unity gain)
10
Gain Bandwidth Product
o
(f = 100kHz, Tamb = 25 C, V in = 10mV, RL = 2kΩ, CL = 100pF)
Input Resistance
Total Harmonic Distortion (f = 1kHz, AV = 20dB, R L = 2kΩ,
o
CL = 100pF, Tamb = 25 C, VO = 2VPP)
µs
%
MHz
2.5
4
1012
Ω
%
0.01
nV
Equivalent Input Noise Voltage (f = 1kHz, Rs = 100Ω)
15

√
Hz
Phase Margin
45
Degrees
* The input bias currents are junction leakage currents which approximately double for every 10oC increase in the junction temperature.
3/9
151-03.TBL
Symbol
LF151 - LF251 - LF351
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREQUENCY
R L = 2 kΩ
T a m b = +25 °C
S ee Figure 2
15V
25
20
V CC =
10V
15
V CC =
5V
5
0
100
1K
10K
100K
1M
10M
Tamb = +25 C
VCC =
15V
R L = 2kΩ
S ee Figure 2
20
15
Ta mb = -55 C
10
5
Ta mb = +125 C
0
10k
40k
100k
400k
1M
4M
10M
FREQUENCY (Hz)
4/9
15
10
V CC =
5V
5
0
100
1K
10K
100K
1M
10M
30
25
20
R L = 1 0 kΩ
15
R L = 2 kΩ
10
5
VC C =
15V
Se e F i gu re 2
0
- 75
- 50
- 25
0
25
50
75
- 50
1 25
T E MP ER AT U R E ( ° C )
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS SUPPLY VOLTAGE
30
30
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE (V)
V CC = 15V
Tamb = +25°C
See Figure 2
20
15
10
5
0
0.1 0.2
0.4
0.7 1
2
4
LOAD RESISTANCE (k Ω)
7
10
151-09.EPS
MAXIMUM PEAK-TO-PEAKOUTPUT
VOLTAGE(V)
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS LOAD RESISTANCE
25
V CC = 10V
FREQUENC Y (Hz)
30
25
20
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREE AIR TEMP.
151-07.EPS
MAXIMUMPEAK-TO-PEAK OUTPUT
VOLTAGE (V)
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREQUENCY
R L= 10kΩ
Ta mb = +25 C
S e e Figure 2
V CC = 15V
151-05.EPS
FREQUENCY (Hz)
25
25
R L = 10 k
Ω
Tamb = +25°C
20
15
10
5
0
2
4
6
8
10
SUPPLY VOLTAGE (V)
12
14
16
151-10.EPS
10
30
151-08.EPS
V CC =
MAXIMUM PEAK-TO-PEAKOUTPUT
VOLTAGE (V)
MAXIMUM PEAK-TO-PEAKOUTPUT
VOLTAGE (V)
30
151-06.EPS
MAXIMUMPEAK-TO-PEAK OUTPUT
VOLTAGE (V)
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE VERSUS FREQUENCY
LF151 - LF251 - LF351
INPUT BIAS CURRENT VERSUS
FREE AIR TEMPERATURE
LARGE SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION VERSUS
FREE AIR TEMPERATURE
100
1000
15V
400
200
100
DIFFERENTIAL VOLTAGE
AMPLIFICATION (V/V)
10
1
0.1
20
V CC =
10
VO =
4
R
2
L
15V
10V
= 2k Ω
1
-25
0
25
50
75
100
-75
125
-50
-25
151-11.EPS
0.01
-50
40
TEMPERATURE (°C)
LARGE SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION AND PHASE
SHIFT VERSUS FREQUENCY
0
25
50
75
100
125
151-12.EPS
INPUT BIAS CURRENT (nA)
V CC =
TEMPERATURE (°C)
TOTAL POWER DISSIPATION VERSUS
FREE AIR TEMPERATURE
180
DIFFERENTIAL
VOLTAGE
AMPLIFICATION
(le fts ca le)
P HASE SHIFT
(right sca le)
10
90
R L = 2kΩ
C L = 100pF
V CC = 15V
T a mb = +125 C
1
100
1K
10K
0
100K
1M
10M
No signal
No load
175
15V
150
125
100
75
50
25
0
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (°C)
SUPPLY CURRENT PER AMPLIFIER
VERSUS FREE AIR TEMPERATURE
SUPPLY CURRENT PER AMPLIFIER
VERSUS SUPPLY VOLTAGE
2.0
2.0
15V
V CC =
1.8
1.6
SUPPLY CURRENT (mA)
No signal
No load
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.8
T a m b = +2 5°C
1.6
No si gn al
No loa d
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
TEMPERATURE (°C)
75
100
125
0
2
4
6
8
10
12
14
16
151-16.EPS
-75
151-15.EPS
SUPPLY CURRENT (mA)
V CC =
200
151-13.EPS
FREQUENCY (Hz)
225
151-14.EPS
100
TOTAL POWER DISSIPATION (mW)
DIFFERENTIAL VOLTAGE
AMPLIFICATION (V/V)
250
SUPPLY VOLTAGE (V)
5/9
LF151 - LF251 - LF351
VOLTAGE FOLLOWER LARGE SIGNAL
PULSE RESPONSE
INPUT AND OUTPUT VOLTAGES
(V)
R L = 1 0 kΩ
88
VC C =
15V
87
86
85
84
83
-75
-50
-25
0
25
50
75
100
125
4
OUTPUT VOLTAGE VERSUS
ELAPSED TIME
INPUT
2
0
VCC = 15V
R L = 2 kΩ
C L= 100pF
Ta mb = +25 C
-2
-4
-6
0
0.5
1
2
2.5
3
3.5
EQUIVALENT INPUT NOISE VOLTAGE
VERSUS FREQUENCY
70
24
EQUIVALENT INPUT NOISE
VOLTAGE (nV/VHz)
90%
16
12
8
V
4
0
tr
0.1
CC
= 15V
R L = 2k Ω
Tamb = +25°C
10%
0
VCC =
60
OVERSHOOT
20
-4
15V
A V = 10
R S = 100 Ω
T amb = +25°C
50
40
30
20
10
0
0.2
0.3 0.4
0.5
0.6
10
0.7
40
100
400
TOTAL HARMONIC DISTORTION VERSUS
FREQUENCY
V VCC = = 15V
15V
CC
11
AA
V V= =
VV
6V6V
O (rms) = =
O (rms)
0.1
0.04
T amb
+25°C
T amb= =+25°C
0.01
0.004
0.001
100
400
1k
4k
10k
FREQUENCY (Hz)
40k
100k
151-21.EPS
TOTAL HARMONIC DISTORTION
(%)
1
0.4
1k
4k
FREQUENCY (Hz)
151-19.EPS
TIME (µs)
6/9
1.5
TIME (µs )
28
OUTPUT VOLTAGE (mV)
OUTP UT
151-17.EPS
TEMPERATURE (°C)
6
10k
40k 100k
151-20.EPS
COMMON MODE MODE REJECTION
RATIO (dB)
89
151-18.EPS
COMMON MODE REJECTION RATIO
VERSUS FREE AIR TEMPERATURE
LF151 - LF251 - LF351
PARAMETER MEASUREMENT INFORMATION
Figure 1 : Voltage Follower
Figure 2 : Gain-of-10 Inverting Amplifier
10k Ω
1k Ω
-
-
eI
eo
LF351
RL = 2kΩ
RL
CL = 100pF
151-23.EPS
CL = 100pF
151-22.EPS
eI
eo
LF351
TYPICAL APPLICATIONS
(0.5Hz) SQUARE WAVE OSCILLATOR
R F = 1 0 0k
3.3 k
Ω
Ω
+15V
L F3 51
1k Ω
C = 3.3
F
-15V
µF
3.3k
Ω
9.1k
1
2 xR
F
151-24.EPS
f osc=
Ω
CF
HIGH Q NOTCH FILTER
LF351
R1
R2
fo =
1
= 1kHz
2 x R1 C1
C3
R3
C1 = C2 =
C3
= 100pF
2
C1
151-25.EPS
R1 = R2 = 2R3 = 1.5M Ω
C2
7/9
LF151 - LF251 - LF351
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
8/9
Min.
Millimeters
Typ.
3.32
0.51
1.15
0.356
0.204
Max.
1.65
0.55
0.304
10.92
9.75
7.95
Min.
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Inches
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
DIP8.TBL
Dimensions
LF151 - LF251 - LF351
PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
o
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
SO8.TBL
Dimensions
o
8 (max.)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which
may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specifications mentioned in this publ ication are subject to change without notice. This pub lication supersedes
and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical
components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
ORDER CODE :
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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