Download PDEU2319X - Potens Semiconductor Corp.

PDEU2319X
20V P-Channel MOSFETs
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
BVDSS
RDSON
ID
-20V
650m
-400mA
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
Features
performance, and withstand high energy pulse in the
 -20V,-400mA, RDS(ON) =650mΩ@VGS = -4.5V
avalanche and commutation mode. These devices are
 Improved dv/dt capability
well suited for high efficiency fast switching applications.
 Fast switching
 Green Device Available
SOT723 Pin Configuration
 Suit for -1.5V Gate Drive Applications
D
Applications
D
 Notebook
 Load Switch
G
 Battery Protection
G
 Hand-held Instruments
S
S
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Rating
Units
VDS
Symbol
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±8
V
Drain Current – Continuous (TC=25℃)
-400
mA
Drain Current – Continuous (TC=100℃)
-250
mA
Drain Current –
-1.6
A
Power Dissipation (TC=25℃)
450
mW
Power Dissipation – Derate above 25℃
3.6
mW/℃
ID
IDM
PD
Parameter
Pulsed1
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Potens semiconductor corp.
Typ.
Max.
Unit
---
280
℃/W
Ver.1.01
1
PDEU2319X
20V P-Channel MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Off Characteristics
Symbol
BVDSS
Parameter
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
IDSS
IGSS
Drain-Source Leakage Current
Gate-Source Leakage Current
Conditions
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-20
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.01
---
V/℃
VDS=-20V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-16V , VGS=0V , TJ=125℃
---
---
-10
uA
VGS=±8V , VDS=0V
---
---
±20
uA
VGS=-4.5V , ID=-0.3A
---
500
650
VGS=-2.5V , ID=-0.2A
---
700
900
VGS=-1.8V , ID=-0.1A
---
1100
1400
VGS=-1.5V , ID=-0.1A
---
1700
2300
-0.3
-0.7
-1.0
V
---
3
---
mV/℃
---
1
2
---
0.28
0.5
---
0.18
0.4
On Characteristics
RDS(ON)
VGS(th)
△VGS(th)
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
m
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Total Gate Charge2 , 3
Gate-Source
Gate-Drain
Charge2 , 3
VDS=-10V , VGS=-4.5V , ID=-0.2A
Charge2 , 3
---
8
16
Rise Time2 , 3
VDD=-10V , VGS=-4.5V , RG=10
---
5.2
10
Turn-Off Delay Time2 , 3
ID=-0.2A
---
30
60
Fall Time2 , 3
---
18
36
Ciss
Input Capacitance
---
40
78
Coss
Output Capacitance
---
15
30
Crss
Reverse Transfer Capacitance
---
6.5
13
Min.
Typ.
Max.
Unit
---
---
-0.4
A
---
---
-0.8
A
---
---
-1
V
Tr
Td(off)
Tf
Turn-On Delay
Time2 , 3
nC
VDS=-10V , VGS=0V , F=1MHz
ns
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-0.2A , TJ=25℃
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.01
2
PDEU2319X
Normalized On Resistance (m)
-ID , Continuous Drain Current (A)
20V P-Channel MOSFETs
TJ , Junction Temperature (℃)
TC , Case Temperature (℃)
Fig.5
-VGS , Gate to Source Voltage (V)
Normalized RDSON vs. TJ
Qg , Gate Charge (nC)
TJ , Junction Temperature (℃)
Normalized Vth vs. TJ
Fig.4
Gate Charge Waveform
-ID , Continuous Drain Current (A)
Normalized Thermal Response (RΘJA)
Fig.3
Fig.2
Continuous Drain Current vs. TC
Normalized Gate Threshold Voltage (V)
Fig.1
-VDS , Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Normalized Transient Response
Fig.6
Potens semiconductor corp.
Maximum Safe Operation Area
Ver.1.01
3
PDEU2319X
20V P-Channel MOSFETs
-VDS
90%
10%
-VGS
Td(on)
Tr
Ton
Fig.7
Td(off)
Tf
Toff
Switching Time Waveform
Fig.8
Potens semiconductor corp.
Gate Charge Waveform
Ver.1.01
4
PDEU2319X
20V P-Channel MOSFETs
SOT723 PACKAGE INFORMATION
Symbol
A
A1
b
b1
c
D
E
E1
e
θ
Min.
0.370
0.000
0.170
0.220
0.009
1.150
1.150
0.750
--5
Dimensions In Millimeters
Typ.
----------------0.800
---
Potens semiconductor corp.
Max.
0.500
0.500
0.270
0.370
0.150
1.250
1.250
0.850
--11
Ver.1.01
5