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v00.0603
MICROWAVE CORPORATION
HMC477MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC477MP86 is an ideal RF/IF
gain block & LO or PA driver for:
P1dB Output Power: +15 dBm
• Cellular / PCS / 3G
Output IP3: +29 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
• CATV, Cable Modem & DBS
Single Supply: +5V to +8V
Gain: 16 dB
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC477MP86 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 4 GHz. This Micro-P packaged
amplifier can be used as a cascadable 50 Ohm RF/
IF gain stage as well as a LO or PA driver with up
to +16 dBm output power. The HMC477MP86 offers
16 dB of gain with a +29 dBm output IP3 at 850 MHz
while requiring only 53 mA from a single positive
supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 5.0 V, Rbias= 28 Ohm, TA = +25° C
Parameter
Min.
Typ.
14.5
12.0
9.5
7.5
16.0
13.5
11.0
9.0
Max.
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
Gain Variation Over Temperature
DC - 4.0 GHz
0.012
Input Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
15
10
8
dB
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
15
14
12
dB
dB
dB
Reverse Isolation
DC - 4.0 GHz
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
dB
dB
dB
dB
0.02
dB/ °C
19
dB
15
14
12
dBm
dBm
dBm
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 Ghz
29
27
25
22
dBm
dBm
dBm
dBm
DC - 4.0 GHz
4.0
dB
53
mA
12
11
9
Note: Data taken with broadband bias tee on device output.
8 - 256
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC477MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Gain vs. Temperature
20
20
15
18
10
16
S21
0
S11
14
S22
-5
-10
12
10
8
-15
6
-20
4
+85 C
-25
2
-40 C
-30
+25 C
0
0
1
2
3
4
5
6
7
8
0
0.5
1
FREQUENCY (GHz)
1.5
2
2.5
3
4
Output Return Loss vs. Temperature
0
-5
-5
RETURN LOSS (dB)
0
-10
-15
+25 C
+85 C
-20
-10
-15
+25 C
+85 C
-40 C
-20
-40 C
-25
-25
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
FREQUENCY (GHz)
1.5
2
2.5
3
3.5
4
3
3.5
4
FREQUENCY (GHz)
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
0
10
9
+25 C
+85 C
-40 C
-5
+25 C
+85 C
-40 C
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
3.5
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
8
AMPLIFIERS - SMT
5
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
-10
-15
-20
7
6
5
4
3
2
1
-25
0
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
4
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 257
HMC477MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
P1dB vs. Temperature
Psat vs. Temperature
20
20
18
18
16
16
14
14
Psat (dBm)
P1dB (dBm)
12
10
8
6
+85 C
-40 C
2
12
10
8
6
+25 C
4
0
+25 C
4
+85 C
2
-40 C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
FREQUENCY (GHz)
40
36
32
OIP3 (dBm)
28
24
20
16
+25 C
+85 C
-40 C
8
4
0
0
0.5
1
1.5
2
2.5
2.5
3
3
3.5
4
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
4
5
6
7
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 28 Ohms
Icc (mA)
4
Gain
P1dB
Psat
OIP3
FREQUENCY (GHz)
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
3.3
+85 C
+25 C
-40 C
3.4
3.5
3.6
3.7
3.8
Vcc (Vdc)
8 - 258
3.5
Gain, Power & OIP3 vs. Supply Voltage
for Constant Id= 53 mA @ 850 MHz
Output IP3 vs. Temperature
12
2
FREQUENCY (GHz)
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
AMPLIFIERS - SMT
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8
HMC477MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Absolute Maximum Ratings
+6 Vdc
Bias Current (Icc)
70 mA
Input Power (RFin)(Vcc= 3.5V)
+17 dBm
Channel Temperature (Tc)
150 °C
Continuous Pdiss (T= 85 °C)
(derate 5.75 mW/°C above 85 °C)
0.374 W
Thermal Resistance (RTH)
(Junction to Lead)
174 °C/W
Storage Temperature
-65 to +150° C
Operating Temperature
-40 to +85° C
8
AMPLIFIERS - SMT
Bias Voltage (Vcc)
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 259
HMC477MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
AMPLIFIERS - SMT
8
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 53 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
8V
RBIAS Value
28 Ω
82 Ω
RBIAS Power Rating
1/8 W
1/4 W
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
8 - 260
900
1900
2200
2400
3500
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
C1, C2
0.01 µF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v00.0603
HMC477MP86
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Evaluation PCB
AMPLIFIERS - SMT
8
List of Materials
Item
Description
J1 - J2
PC Mount SMA Connector
J3 - J4
DC Pin
C1, C2
Capacitor, 0402 Pkg.
C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 µF Capacitor, Tantalum
R1
Resistor, 1210 Pkg.
L1
Inductor, 0603 Pkg.
U1
HMC477MP86
PCB*
107087 Evaluation PCB
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads
should be connected directly to the ground plane similar
to that shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate
heat sink. The evaluation circuit board shown is available
from Hittite upon request.
* Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 261
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