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For, 2N2222 transistor, Vdd = 1.8 volts For Area = 20 x 10-3 m2 (fixed) and IC = 1nA to 1mA At 1mA At 1nA βac 81.70 5.03 βdc 100.5 2.07 gm 30.06m 26.3n Vce 792.23m 373.98m Intrinsic gain (gm*ro) 2.78k 3.6168k 294.77M 4.78k 92.755k 138G fT ro For Area = 5 x 10-3 m2 (fixed) and IC = 1nA to 1mA At 1mA At 1nA βac 37.64 13.08 βdc 58.68 5.59 gm 24.1m 37n Vce 1.045 417.643m Intrinsic gain (gm*ro) 2.17k 3.96k 309.19M 26.146k 90.457k 105.265G fT ro For Area = 5 x 10-6 m2 (fixed) and IC = 1nA to 1mA At 1m At 1n βac 6.083 42.2481 βdc 11.75 20.83 gm 18.32m 40.35n Vce 9.5 480.57m Intrinsic gain (gm*ro) 1.864k 3.5593k 316.442M 273.958k 102Kohm 91G fT ro