Download #06 IRF9510PBF VISHAY Datasheet

IRF9510, SiHF9510
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
- 100
RDS(on) (Ω)
VGS = - 10 V
Qg (Max.) (nC)
1.2
8.7
Qgs (nC)
2.2
Qgd (nC)
4.1
Configuration
Single
S
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
G
D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF9510PbF
SiHF9510-E3
IRF9510
SiHF9510
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
VDS
VGS
- 100
± 20
- 4.0
- 2.8
- 16
0.29
200
- 4.0
4.3
43
- 5.5
- 55 to + 175
300d
10
1.1
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Currenta
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
ID
IDM
TC = 25 °C
for 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = - 4.0 A (see fig. 12).
c. ISD ≤ - 4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91072
S11-0506-Rev. B, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510, SiHF9510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 μA
- 100
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.091
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 μA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V
-
-
- 100
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 2.4 Ab
VGS = - 10 V
VDS = - 50 V, ID = - 2.4 Ab
μA
-
-
1.2
Ω
1.0
-
-
S
-
200
-
-
94
-
-
18
-
-
-
8.7
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
2.2
Gate-Drain Charge
Qgd
-
-
4.1
Turn-On Delay Time
td(on)
-
10
-
tr
-
27
-
-
15
-
-
17
-
-
4.5
-
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 4.0 A, VDS = - 80 V,
see fig. 6 and 13b
VDD = - 50 V, ID = - 4.0 A,
Rg = 24 Ω, RD = 11 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
7.5
-
-
-
- 4.0
-
-
- 16
-
-
- 5.5
V
-
82
160
ns
-
0.15
0.30
μC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 4.0 A, VGS = 0 Vb
TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91072
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510, SiHF9510
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
101
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- ID, Drain Current (A)
101
100
- 4.5 V
- ID, Drain Current (A)
Top
25 °C
175 °C
100
20 µs Pulse Width
VDS = - 50 V
20 µs Pulse Width
TC = 25 °C
100
101
4
- VDS, Drain-to-Source Voltage (V)
91072_01
- ID, Drain Current (A)
100
- 4.5 V
20 µs Pulse Width
TC = 175 °C
100
91072_02
101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Document Number: 91072
S11-0506-Rev. B, 21-Mar-11
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
6
- VGS, Gate-to-Source Voltage (V)
91072_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101 Top
5
91072_04
3.0
2.5
ID = - 4.0 A
VGS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510, SiHF9510
350
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
280
Ciss
210
140
Coss
70
Crss
- ISD, Reverse Drain Current (A)
Vishay Siliconix
101
175 °C
0
100
VDS = - 80 V
Operation in this area limited
by RDS(on)
5
VDS = - 50 V
16
2
VDS = - 20 V
12
8
4
10
100 µs
5
1 ms
2
1
10 ms
5
2
0.1
5
For test circuit
see figure 13
0
0
91072_06
2
4
6
8
QG, Total Gate Charge (nC)
TC = 25 °C
TJ = 175 °C
Single Pulse
2
10-2
0.1
10
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
5.0
4.0
- VSD, Source-to-Drain Voltage (V)
102
ID = - 4.0 A
3.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
2.0
91072_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
VGS = 0 V
10-1
1.0
101
- VDS, Drain-to-Source Voltage (V)
91072_05
25 °C
100
91072_08
2
5
1
2
5
10
2
5
102
2
5
103
- VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91072
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510, SiHF9510
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
4.0
+VDD
- 10 V
- ID, Drain Current (A)
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
td(on)
td(off) tf
tr
VGS
1.0
10 %
0.0
25
50
75
100
125
150
175
90 %
VDS
TC, Case Temperature (°C)
91072_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
D = 0.5
1
0.2
0.1
0.1
PDM
0.05
0.02
0.01
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91072_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91072
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510, SiHF9510
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T
RG
+ V DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
700
ID
- 1.6 A
- 2.8 A
Bottom - 4.0 A
Top
600
500
400
300
200
100
VDD = - 25 V
0
25
91072_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91072
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510, SiHF9510
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91072.
Document Number: 91072
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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Revision: 02-Oct-12
1
Document Number: 91000