Download ZTX696B Silicon planar medium power high gain transistor datasheet

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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX696B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
Transition Frequency
SYMBOL
fT
Input Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
toff
MIN.
70
TYP.
MAX.
200
6
80
4400
UNIT
MHz
pF
pF
ns
ns
CONDITIONS.
IC=50mA, VCE=5V
f=50MHz
VEB=0.5V, f=1MHz
VCE=10V, f=1MHz
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
PARAMETER
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
SYMBOL
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
C
B
MAX.
UNIT
175
116
70
°C/W
°C/W
°C/W
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
THERMAL CHARACTERISTICS
ZTX696B
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
180
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
0.5
A
Practical Power Dissipation *
Ptotp
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
3-248
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
TYP.
MAX.
UNIT
CONDITIONS.
180
V
IC=100µA
V(BR)CEO
180
V
IC=10mA*
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µA
VCB=145V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=200mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=200mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
500
150
3-247
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX696B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
Transition Frequency
SYMBOL
fT
Input Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
toff
MIN.
70
TYP.
MAX.
200
6
80
4400
UNIT
MHz
pF
pF
ns
ns
CONDITIONS.
IC=50mA, VCE=5V
f=50MHz
VEB=0.5V, f=1MHz
VCE=10V, f=1MHz
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
PARAMETER
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
SYMBOL
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
C
B
MAX.
UNIT
175
116
70
°C/W
°C/W
°C/W
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
THERMAL CHARACTERISTICS
ZTX696B
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
180
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
0.5
A
Practical Power Dissipation *
Ptotp
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
3-248
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
TYP.
MAX.
UNIT
CONDITIONS.
180
V
IC=100µA
V(BR)CEO
180
V
IC=10mA*
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µA
VCB=145V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=200mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=200mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
500
150
3-247
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
ZTX696B
TYPICAL CHARACTERISTICS
IC/IB=100
IC/IB=50
IC/IB=10
Tamb=25°C
0.6
0.4
0.2
0.01
0.6
0.4
0.1
1
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
VCE=5V
1.0
1K
0.8
0.6
500
0.4
0.2
VBE(sat) - (Volts)
1.2
-55°C
+25°C
+100°C
+175°C
1.6
1.5K
hFE - Typical Gain
1.4
0
10
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
1.4
IC/IB=50
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
10
1
0
0.01
1.4
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
VCE=5V
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
1.6
0.1
IC - Collector Current (Amps)
0.01
0.1
1
10
Single Pulse Test at Tamb=25°C
1
VBE - (Volts)
IC/IB=50
0.2
0
hFE - Normalised Gain
-55°C
+25°C
+100°C
+175°C
0.8
VCE(sat) - (Volts)
VCE(sat) - (Volts)
0.8
0.1
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
10
1
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-249
1000
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