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Chapter 13
Bipolar Junction Transistors
1. Understand bipolar junction transistor
operation
in amplifier circuits.
2. Analyze simple amplifiers using the loadline technique and understand the causes of
nonlinear distortion.
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
3. Use large-signal equivalent circuits to
analyze BJT circuits.
4. Analyze bias circuits.
5. Use small-signal equivalent circuits to
analyze BJT amplifiers.
6. Compute performance of several important
amplifier configurations.
7. Select an amplifier configuration appropriate
for a given application.
ELECTRICA
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
Equations of Operation
  v BE
iE  I ES exp 
  VT
 
  1
 
iE  iC  iB
iC  iB
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 v BE 

iC  I s exp 
 VT 
iC

 
iB 1  
iC

iE
ENGINEERING
I s  I ES
Chapter 13
Bipolar Junction Transistors
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
COMMON-EMITTER
CHARACTERISTICS
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
Common-emitter Input
Characteristic
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
Common-emitter Output
Characteristics
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
LOAD-LINE ANALYSIS OF A COMMONEMITTER
AMPLIFIER (Input Circuit)
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VBB  vin t   RBiB t   vBE t 
Chapter 13
Bipolar Junction Transistors
LOAD-LINE ANALYSIS OF A COMMONEMITTER
AMPLIFIER (Output Circuit)
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VCC  RC iC  vCE
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
When iC becomes
zero, we say that
the transistor is
cutoff.
When vCE 0.2
V, we say that the
transistor is in
saturation.

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Chapter 13
Bipolar Junction Transistors
PNP BIPOLAR JUNCTION
TRANSISTORS
Except for reversal of current directions and
voltage polarities, the pnp BJT is almost
identical to the npn BJT.
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
LARGE-SIGNAL DC CIRCUIT MODELS
(Active-Region Model)
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Chapter 13
Bipolar Junction Transistors
LARGE-SIGNAL DC CIRCUIT MODELS
(Saturation-Region Model)
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
LARGE-SIGNAL DC CIRCUIT MODELS
(Cutoff-Region Model)
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
Analysis of the Fixed Base
Bias Circuit
RB  200k
RC  1k
VCC  15V
  100
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
L
ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
ELECTRICA
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
Analysis of the Four-Resistor Bias
Circuit
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Chapter 13
Bipolar Junction Transistors
1
RB 
 R1 R2
1 R1  1 R2
VB  VCC
R2
R1  R2
VB  VBE
IB 
RB    1RE
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Chapter 13
Bipolar Junction Transistors
I C  βI B
VCE  VCC  RC I C  RE I E
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Chapter 13
Bipolar Junction Transistors
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Chapter 13
Bipolar Junction Transistors
iB t   iBQ  ib t 
v BE t   VBEQ  vbe t 
ib(t) denotes the signal current flowing into the
base, IBQ is the dc current that flows when the
signal is absent, and iB(t) is the total base
current. Similar notation is used for the other
currents and voltages.
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Chapter 13
Bipolar Junction Transistors
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
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ENGINEERING
Principles and Applications
Chapter 13
Bipolar Junction Transistors
Small-Signal Equivalent
Circuit for the BJT
r 
VT
I CQ
iC t   ib t 
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Chapter 13
Bipolar Junction Transistors
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Chapter 13
Bipolar Junction Transistors
COMMON-EMITTER AMPLIFIERS
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Chapter 13
Bipolar Junction Transistors
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Bipolar Junction Transistors
1
RL  RL RC 
1 RL  1 RC
vo
RL 
Av 

vin
r
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vo
RC 
Avo 

vin
r
Chapter 13
Bipolar Junction Transistors
vin
1
Z in

iin 1 RB  1 r
io
Z in
Ai 
 Av
iin
RL
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ENGINEERING
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G  Ai Av
Chapter 13
Bipolar Junction Transistors
Z o  RC
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Chapter 13
Bipolar Junction Transistors
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Principles and Applications
Chapter 13
Bipolar Junction Transistors
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Bipolar Junction Transistors
The common-emitter amplifier is
inverting and has large voltage gain
magnitude, large current gain, and large
power gain.
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Chapter 13
Bipolar Junction Transistors
EMITTER FOLLOWERS
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Chapter 13
Bipolar Junction Transistors
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Chapter 13
Bipolar Junction Transistors
1
RB  R1 R2 
1 R1  1 R2
1
RL  RL RE 
1 RL  1 RE
Av

1   RL

r  1   RL
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Chapter 13
Bipolar Junction Transistors
1
Zi 
 RB Z it
1 RB  1 Z it
vin
Z it 
 rπ  1  β RL
ib
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Chapter 13
Bipolar Junction Transistors
Output Impedance
1
Rs 
1 Rs  1 R1  1 R2
vx
1
Zo 

i x 1    Rs  r   1 RE
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Chapter 13
Bipolar Junction Transistors
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Chapter 13
Bipolar Junction Transistors
Even though the voltage gain of the
emitter follower is less than unity, the
current gain
and power gain can be large.
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Chapter 13
Bipolar Junction Transistors
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