Download 0.5 AMI SPICE parameters

MOSIS PARAMETRIC TEST RESULTS
RUN: T15D
TECHNOLOGY: SCN05
VENDOR: AMI
FEATURE SIZE: 0.5 microns
INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: American Microsystems, Inc. C5N
TRANSISTOR PARAMETERS
W/L
MINIMUM
Vth
3.0/0.6
SHORT
Idss
Vth
Vpt
20.0/0.6
WIDE
Ids0
20.0/0.6
LARGE
Vth
Vjbkd
Ijlk
Gamma
50/50
N-CHANNEL P-CHANNEL
K' (Uo*Cox/2)
Low-field Mobility
UNITS
0.80
-0.94
volts
457
0.68
10.0
-248
-0.92
-10.0
uA/um
volts
volts
< 2.5
< 2.5
pA/um
0.72
11.4
<50.0
0.47
-0.96
-11.7
<50.0
0.59
volts
volts
pA
V^0.5
57.2
463.82
-18.8
152.44
uA/V^2
cm^2/V*s
COMMENTS: Poly bias varies with design technology. To account for mask and
etch bias use the appropriate value for the parameter XL in your
SPICE model card.
Design Technology
XL
----------------------SCN_SUBM (lambda=0.30)
0.00
AMI_C5
0.00
SCN (lambda=0.35)
-0.10
FOX TRANSISTORS
Vth
GATE
Poly
PROCESS PARAMETERS
N+ACTV P+ACTV
Sheet Resistance
80.9 104.3
Width Variation
-0.21 -0.22
(measured - drawn)
Contact Resistance
67.0 150.5
Gate Oxide Thickness 140
PROCESS PARAMETERS
Sheet Resistance
Width Variation
(measured - drawn)
Contact Resistance
POLY_HR
1077
N+ACTIVE
>15.0
P+ACTIVE
<-15.0
POLY
21.8
-0.15
POLY2
41.5
-0.07
15.8
27.5
N\PLY
838
COMMENTS: N\POLY is N-well under polysilicon.
MTL1
0.09
0.05
N_WELL
835
UNITS
volts
MTL2
0.09
-0.06
MTL3
0.06
-0.07
UNITS
ohms/sq
microns
0.82
0.64
ohms
angstrom
UNITS
ohms/sq
microns
ohms
CAPACITANCE PARAMETERS N+ACTV P+ACTV
Area (substrate)
426
733
Area (N+active)
Area (P+active)
Area (poly)
Area (poly2)
Area (metal1)
Area (metal2)
Fringe (substrate)
328
263
Fringe (poly)
Fringe (metal1)
Fringe (metal2)
Overlap (N+active)
Overlap (P+active)
CIRCUIT PARAMETERS
Inverters
Vinv
Vinv
Vol (100 uA)
Voh (100 uA)
Vinv
Gain
Ring Oscillator Freq.
DIV256 (31-stg,5.0V)
Ring Oscillator Power
DIV256 (31-stg,5.0V)
POLY
88
2459
2375
POLY2
M1
31
36
M2
16
16
M3
10
12
915
51
47
15
9
31
13
36
38
28
32
49
74
58
59
38
47
N_WELL
40
215
234
UNITS
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um
aF/um
aF/um
aF/um
aF/um
aF/um
UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0
2.12
2.38
0.25
4.74
2.55
-22.79
volts
volts
volts
volts
volts
106.46
MHz
0.42
uW/MHz/gate
COMMENTS: SUBMICRON
T15D SPICE Level 3 PARAMETERS
*
* DATE: Jun 27/01
* LOT: T15D
WAF:
* DIE: N_Area_Fring
DEV:
* Temp= 27
.MODEL CMOSN NMOS (
+ TOX
= 1.4E-8
NSUB
+ PHI
= 0.7
VTO
+ UO
= 662.6984452
ETA
+ KP
= 1.259355E-4
VMAX
+ RSH
= 7.513418E-3
NFS
+ XJ
= 3E-7
LD
+ CGDO
= 2.15E-10
CGSO
+ CJ
= 4.258447E-4
PB
+ CJSW
= 3.147465E-10
MJSW
*
.MODEL CMOSP PMOS (
+ TOX
= 1.4E-8
NSUB
+ PHI
= 0.7
VTO
+ UO
= 250
ETA
+ KP
= 3.924644E-5
VMAX
+ RSH
= 33.9672594
NFS
+ XJ
= 2E-7
LD
+ CGDO
= 2.34E-10
CGSO
+ CJ
= 7.285722E-4
PB
+ CJSW
= 2.955161E-10
MJSW
*
02
N3740/10
=
=
=
=
=
=
=
=
=
1E17
0.7640855
3.162045E-6
1.442228E5
1E12
1E-13
2.15E-10
0.9140376
0.1977689
LEVEL
GAMMA
DELTA
THETA
KAPPA
TPG
WD
CGBO
MJ
)
=
=
=
=
=
=
=
=
=
3
0.5483559
3.0541177
0.1013999
0.3
1
2.334779E-7
1E-10
0.435903
=
=
=
=
=
=
=
=
=
1E17
-0.9444911
0
1E6
1E12
5E-13
2.34E-10
0.96443
0.3184873
LEVEL
GAMMA
DELTA
THETA
KAPPA
TPG
WD
CGBO
MJ
)
=
=
=
=
=
=
=
=
=
3
0.6243261
0.1118368
0.1633973
30.1015109
-1
4.11531E-7
1E-10
0.5