Download 7MBR 35SB-120

7MBR 35SB-120
IGBT PIM
1200V
6x35A+Chopper
Power Integrated Module (PIM)
■ Features
• NPT-Technology
• Solderable Package
• Square SC SOA at 10 x IC
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
■ Outline Drawing
■ Equivalent Circuit
■ Absolute Maximum Ratings ( Tc=25°C)
Brake
Chopper
Rectifier
Inverter
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Average Output Current
Surge Current
(Non Repetitive)
2
It
(Non Repetitive)
Collector-Emitter Voltage
Gate –Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Operating Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Screw Torque*
Symbols
VCES
VGES
IC
IC PULSE
-IC PULSE
PC
VRRM
IO
IFSM
VCES
VGES
IC
IC PULSE
PC
VRRM
Tj
TStg
VISO
Test Conditions
Continuous
1ms
25°C / 80°C
25°C / 80°C
1 device
50Hz/60Hz sinus wave
Tj=150°C, 10 ms,
sinus wave
Continuous
1ms
1 device
A.C. 1min.
25°C / 80°C
25°C / 80°C
Ratings
1200
± 20
50 / 35
100 / 75
35
240
1600
35
360
648
1200
± 20
35 / 25
70 / 50
180
1200
+150
-40 ∼ +125
2500
3.5
Units
V
A
W
V
A
2
As
V
A
W
V
°C
V
Nm
Note: *:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
IGBT PIM
1200V
6x35A+Chopper
7MBR 35SB-120
■ Electrical Characteristics( Tj=25°C )
Brake Chopper
Rectifier
FRD
Inverter
IGBT
Items
Test Conditions
ICES
IGES
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input Capacitance
Turn-off Time
Cies
ton
tr,x
tr,i
toff
tf
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=35mA
VGE=15V
Chip
IC = 35A
Terminal
f=1MHz, VGE=0V, VCE=10V
VCC = 600V
IC = 35A
VGE = ±15V
RG = 33Ω
Inductive Load
Diode Forward On-Voltage
VF
IF=35A
Reverse Recovery Time
trr
IF=35A
Turn-on Time
IRRM
ICES
IGES
VCE(sat)
VR =1600V
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=15V
Chip
IC=25A
Terminal
VCC = 600V
IC = 15A
VGE = ±15V
RG = 51Ω
VR=1200V
T= 25°C
T=100°C
T=25 / 50°C
Resistance
R
B Value
B
7.2
2.1
2.25
4200
0.35
0.25
0.10
0.45
0.08
1.1
1.2
Reverse Current
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Collector-Emitter Saturation Voltage
Turn-off Time
5.5
1.0
200
8.5
Chip
Terminal
IF=35A
ton
tr,x
toff
tf
IRRM
Typ. Max. Units
2.3
2.45
VFM
Turn-on Time
Min.
Chip
Terminal
Forward Voltage
Reverse Current
NTC
Symbols
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
2.10
2.25
0.35
0.25
0.45
0.08
mA
nA
V
2.7
pF
1.2
0.6
1.0
0.3
3.3
350
1.5
1.0
1.0
200
2.7
1.2
0.6
1.0
0.3
1.0
µs
V
ns
V
mA
mA
nA
V
µs
mA
465
3305
5000
495
3375
Min.
Typ. Max. Units
520
3450
Ω
K
■ Thermal Characteristics
Items
Thermal Resistance (1 device)
Contact Thermal Resistance
Symbols
Rth(j-c)
Rth(c-f)
Test Conditions
Inverter IGBT
Inverter FRD
Brake IGBT
Rectifier Diode
With Thermal Compound
0.52
0.90
0.69 °C/W
0.75
0.05
7MBR 35SB-120
IGBT PIM
1200V
6x35A+Chopper
7MBR 35SB-120
IGBT PIM
1200V
6x35A+Chopper
7MBR 35SB-120
IGBT PIM
1200V
6x35A+Chopper
7MBR 35SB-120
IGBT PIM
1200V
6x35A+Chopper
Specification is subject to change without notice
December 1998b