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Micro-Architecture
Techniques for Sensor
Network Processors
Amir Javidi
EECS 598
Feb 25, 2010
Motivation
• Low performance tasks
• Long duration
• Small energy supplies
2
Papers
•
•
3
[1] L. Nazhandali, B. Zhai, J. Olson, A. Reeves, M. Minuth, R.
Helfand, S. Pant, T. Austin, and D. Blaauw, “Energy optimization of
subthreshold voltage sensor network processors,” in Proc. Int.
Symp. Computer Architecture, 2005, pp. 197–207.
[2] S. Hanson, M. Seok, Y-S. Lin, Z. Foo, D. Kim, Y. Lee, N. Liu, D.
Sylvester, and D. Blaauw, “A low voltage processor for sensing
applications with picowatt standby mode,” IEEE Journal of SolidState Circuits, pp. 1145-1155, April 2009.
Energy Budget
• 2g Vanadium oxide battery: 720 mAh
•
Powers ARM 720T processor at 100MHz for
45hrs
• Thin film zinc/silver oxide battery:
100 μAh/cm2, 1.55 V
•
4
For area of 1mm2 average current must be 114pA
(power consumption of 177 pW) for 1 year lifetime
Performance Requirement
• Blood pressure monitoring (low rate):
•
Sensing @ 800 bps  10,000 inst/sec
• EEG brain signal monitoring (high rate):
•
5
3200 bps  56,000 inst/sec for filtering,
analysis, compression, and storage
Architecture/Circuit Techniques
• Sub-threshold implementation (Vdd < Vth)
• ISA optimization
• Voltage scaling
• Power gating
• Stack forcing
• Data/instruction compression
6
Subthreshold design
• Why subthreshold?
•
Processor operating in lowest super-threshold
voltages deliver too much performance
Performance of
sensor network
processor
applications on
embedded targets.
Number of times
faster than real-time
the processor can
handle the worst case
data stream rate [1].
7
Subthreshold Circuit Design
8
Subthreshold Energy Optimization
Einst  EcycleCPI
1
Ecycle  ( CsVdd2  Vdd I leak tclk )
2
tclk  sub  e kVdd
Vmin
energy
optimal
supply
voltage
Energy as a function of
Voltage[1]
9
Subthreshold
ISA Optimization
• Why ISA optimization?
•
•
•
Memory dissipates static/dynamic energy
Memory size
leakage
Tradeoff between
memory size and
control logic size
Logic Vs memory energy tradeoff [1]
10
ISA Optimization
• Impact of ISA optimization on code size and
control logic complexity
11
Micro-Architecture
• Sensor network processor micro-architecture
12
Performance vs. Energy
13
Results
• Sensor network processor
•
•
•
•
•
•
•
14
ROM/RAM memory
8 bit data path
235 mV supply
182 KHz
1.38 pJ/inst
4.1x faster than necessary for mid-bandwidth
25 years lifetime with 2g vanadium oxide battery
(720 mAh)
Phoenix Processor
• Focus on lowering standby power
• Older 0.18μm technology
• Custom leakage-optimized instruction set
• Simple data memory compression
• Ultra-low-leakage memory cell
• Huge tradeoff between standby power and
area and active energy
15
Phoenix Processor
16
CMOS Technology
• Newer technology (65 nm)
•
•
High subthreshold leakage
Small capacitance
• Older technology (180 nm)
•
•
17
7.7x larger
647x less total energy consumption
Voltage Scaling
• Supply voltage of 0.5 V
•
•
•
•
18
Mix of subthreshold and near-subthreshold
devices
Retentive gates
high-Vth ~ 0.7 V
Non-retentive gates
medium-Vth ~ 0.5 V
High-Vth consumes ~ 1000x less leakage power
Power Gating
• Medium-Vth power switch
•
19
Smaller switch ~ 1000x
•
•
Less area overhead
Less charging/discharging power overhead
CPU Architecture
• 2 stage, 8bit data width, 10bit inst. Width
• ALU (add, subtract, shift)
• No multiplier
• Simple decoder (min set of operations)
20
ISA Optimization
• Minimized instruction width (10 bit)
•
•
21
Reduces IMEM standby power dissipation
Efficient operand encoding
•
•
Explicit operand: more flexibility, more frequently used
Implicit operand: less flexibility, less frequently used
Memory Design
• 64x10b SRAM (IMEM)
•
•
Application specific instructions
No power gating
•
•
Commonly used instructions
Power gated
•
•
Data compression
Fine grain power gating
• 64x10b ROM (IROM)
• 52x40b SRAM (DMEM)
22
Memory Design
• Leakage reduction
•
•
High-Vth bitcell transistors
Cross coupled inverters:
•
•
Stacked transistors
Increased length
•
(0.35μm to 0.50μm)
~2x leakage reduction
• Robustness
•
•
23
Full swing read-buffer
Power gated
Results
• Phoenix processor
•
•
•
•
•
•
24
0.5 V power supply
106 KHz
2.8 pJ/cycle
297 nW
226 nW active mode
35.4 pW standby mode
915 x 915 μm2
Questions?
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