Download 2SA2166-T150

2SA2166-T150
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
AEC-Q101 Compliance
OUTLINE DRAWING
2SA2166 is a silicon PNP epitaxial type transistor designed with
high collector current, low VCE（sat）.
2.8
0.65
0.4
0.95
②
1.5
③
0～0.1
0.8
1.1
●High collector current
IC（MAX）=-500mA
●Low collector to emitter saturation voltage
VCE（sat）<-0.4Vmax(IC=-150mA/IB=-15mA）
①
0.95
0.65
2.8
1.90
FEATURE
Unit：mm
0.13
DESCRIPTION
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
MAXIMUM RATINGS（Ta=25℃）
記 号
VCEO
VCBO
VEBO
IC
PC
Tj
Tstg
項
目
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
定 格 値
-60
-60
-5
-500
200
+150
-55～+150
単 位
V
V
V
mA
mW
℃
℃
EIAJ：SC-59
JEDEC： Similar to
TO-236
MARKING
Type Name
A ・W
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
V（BR）CEO
V（BR）CBO
V（BR）EBO
ICBO
IEBO
hFE
VCE（sat）
VBE（sat）
fT
Cob
Parameter
C to E breakdown voltage
C to B breakdown voltage
E to B breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
Test condition
IC=-1mA、IB=0
IC=-10μA、IE=0
IE=-10μA、IC=0
VCB=-50V、IE=0
VEB=-3V、IC=0
IC=-150mA、VCE=-10V
IC=-150mA、IB=-15mA
IC=-150mA、IB=-15mA
IE=50mA、VCE=-20V、f=100MHz
VCB=-10V、f=1MHz
Min
-60
-60
-5
－
－
100
－
－
200
－
ISAHAYA ELECTRONICS CORPORATION
Limits
Typ
－
－
－
－
－
－
－
－
－
－
Max
－
－
－
-0.1
-0.1
300
-0.4
-1.3
－
8
Unit
V
V
V
μA
μA
－
V
V
MHz
pF
2SA2166-T150
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
300
-100
IB=-500uA
250
COLLECTOR CURRENT IC(mA)
COLLECTOR DISSIPATION Pc(mW)
Ta=25℃
COMMON EMITTER OUTPUT
200
150
100
50
IB=-400uA
-80
IB=-300uA
-60
IB=-200uA
-40
IB=-100uA
-20
IB=0uA
0
-0
0
50
100
AMBIENT TEMPERATURE Ta(℃)
150
-0
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
500
GAIN BAND WIDTH PRODUCT fT(MHz)
DC FORWARD CURRENT GAIN hFE(-)
-10
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
10000
VCE=-10V
1000
25℃
100
85℃
-40℃
10
-0.1
Ta=25℃
VCE=-20V
400
300
200
100
0
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
1
COMMON EMITTER TRANSFER
10
100
EMITTER CURRENT IE(mA)
1000
COLLECTOR OUTPUT CAPACITANCE VS.
COLLECTOR TO BASE VOLTAGE
-500
100
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
VCE=-10V
COLLECTOR CURRENT IC(mA)
-2
-4
-6
-8
COLLECTOR TO EMITTER VOLTAGE VCE(V)
-400
85℃
-300
25℃
-200
-40℃
-100
-0
-0
-0.2
-0.4
-0.6
-0.8
-1
BASE TO EMITTER VOLTAGE VBE(V)
-1.2
Ta=25℃
IE=0
f=1MHz
10
1
0.1
1
10
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
100
2SA2166-T150
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
AREA OF SAFE OPERATION
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-10
Ta=25℃
SINGLE PULSE
-100
-10
-1
-0.1
85℃
-40℃
25℃
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
100msec
-1
1sec
ICmax=-0.5A
10msec
1msec
-0.1
DC(200mW)
-0.01
VCEOmax=-60V
IC/IB=10
COLLECTOR CURRENT IC(A)
COLLECTOR TO EMITTER
SATURATION VOLTAGE VCE(sat)(mV)
-1000
-0.001
-0.01
-0.1
-1
-10
-100
-1000
COLLECTOR TO EMITTER VOLTAGE VCE(V)
ISAHAYA ELECTRONICS CORPORATION
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is
always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement
of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap.
Notes regarding these materials
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customerʼ s
application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights, originating in the use
of any product data, diagrams, charts or circuit application examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time
of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements
or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products
distributor for the latest product information before purchasing product listed herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in
which human life is potentially at stake. Please contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular,
medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials.
·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from
the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to
the export control laws and regulations of Japan and/or the country of destination is prohibited.
·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or
the products contained therein.
Mar.2017