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Transcript
Chapter 14: Semiconductor Electronics: Materials, devices and Simple circuits Frequency : Sl.No. 1 ( Asked three times or more ) Question Marks Year Draw a simple circuit of a CE transistor amplifier. Explain its working. Show that the voltage gain AV, of the amplifier is given by 5 ,where is the current gain, RL is the load resistance and ri is the input resistance of the transistor. What is the significance of the negative sign in the expression for the voltage gain? 2 2012(D) Questions of similar nature asked in 2008, 2009 2006, 2013 Explain the function of base region of a transistor. Why is this region made thin and lightly doped? Draw a circuit diagram to study the input and output characteristics of n-p-n transistor in a common emitter (CE) configuration. Show these characteristics graphically. Explain how current amplification factor of the transistor is calculated using output characteristics. 5 3 4 5 6 OR (i) Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics. (ii) Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier. (i) With the help of circuit diagrams distinguish between forward biasing and reverse biasing of a p-n junction diode. (ii) Draw V-I characteristics of a p-n junction diode in (a) forward bias, (b) reverse bias. (a) Why is zener diode fabricated by heavily doping both p-and n-sides of the junction? (b) Draw the circuit diagram of zener diode as a voltage regulator and briefly explain its working. OR How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage. OR Name the semiconductor device that can be used to regulate an unregulated dc power supply.With the help of I-V characteristics of this device, explain its working principle. Draw a circuit diagram of a full-wave rectifier. Explain its working principle. Draw the input/output wave-forms indicating clearly the functions of the two diodes used. Explain, with the help of suitable diagram, the two important processes that 2009(D) 3 3 2009, 2010, 2014(D) 2008, 2009,2010(F) 2012, 2014(F) 2009(D) 2 2011(D) 3 3 2007, 2008,2012 2009, 2 2010, 2012, 2015 2010 2 2013(D) 3 2014(F) 2 2010(AI) 2 2008(D) 2 2010(AI) 2 2011(D) occur during the formation of p-n junction. Hence define the terms : depletion region and barrier potential. 7 8 Draw the circuit diagram of an illuminated photodiode in reverse bias. How is photodiode used to measure light intensity? OR Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals. OR (a) How is photodiode fabricated? (b) Briefly explain its working. Draw its V–I characteristics for two different intensities of illumination. (i) Identify the logic gates marked P and Q in the given logic circuit. (ii) Write down the output at X for the inputs A = 0, B = 0 and A =1, B =1. OR The given inputs A, B are fed to a 2-input NAND gate. Draw the output wave form of the gate. OR (iii) Identify the logic gates marked P and Q in the given logic circuit. (ii) Write down the output at X for the inputs A = 0, B = 0 and A =1, B =1. OR Write the truth table for the logic circuit shown below and identify the logic operation performed by this circuit. In the circuit shown in the figure, identify the equivalent gate of the circuit and make its truth table. 2 2013(AI) 2 2014(D) 2 2014(D) OR Write the truth table for the combination of the gates shown. Name the gates used. OR Identify the logic gates marked ‘P’ and ‘Q’ in the given circuit. Write the truth table for the combination. Frequency : Sl.No. 1 ( Asked two times ) Question (a) Draw the circuit diagram of a base-biased n-p-n transistor in C-E configuration. Explain how this circuit is used to obtain the transfer characteristic (Vo –Vi characteristics). (b) The typical output characteristics (IC –VCE ) of an n-p-n transistor in C-E configuration is shown in the figure. Calculate (i) the output resistance r0 and (ii) the current amplification factor 𝛽ac . Marks Year 5 2010, 2013 2 3 4 5 6 Explain, with the help of a circuit diagram, the working of a p-n junction diode as a half-wave rectifier. The current in the forward bias is known to be more (~mA) than the current in the reverse bias (~µA). What is the reason, then, to operate the photodiode in reverse bias? Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range? OR How is a light emitting diode fabricated ? Briefly state its working. Write any two important advantages of LEDs over the conventional incandescent low power lamps. OR Explain, with the help of a schematic diagram, the principle and working of a Light Emitting Diode. What criterion is kept in mind while choosing the semiconductor material for such a device ? Write any two advantages of Light Emitting Diode over conventional incandescent lamps. What are energy bands? How are these formed? Distinguish between a conductor, an insulator and a semiconductor on the basis of energy band diagram. OR Draw energy band diagrams of an n-type and p-type semiconductor at temperature T > 0 K. Mark the donor and acceptor energy levels with their energies. OR Distinguish between a metal and an insulator on the basis of energy band diagrams. 3 What happens to the width of depletion layer of a p-n junction when it is (i) forward biased, (ii) reverse biased? 2 2 2006, 2014 2008 ,2012 2 2013, 2015 3 2015(Bhubaneswar) 3 2007(D) 5 2006(AI) 2 2014(F) 2 2011(AI),2008(AI) Frequency : ( Asked Once ) Sl.No. Question Marks Year 2006(D) Draw a circuit diagram for use of NPN transistor as an amplifier in common 3 01 emitter configuration. The input resistance of a transistor is 1000Ω. On changing its base current by 10µA, the collector current increases by 2 mA. If a load resistance of 5kΩ is used in the circuit, calculate: (i) The Current gain (ii) voltage gain of the amplifier (a) Differentiate between three segments of a transistor on the basis of their size and level of doping. (b) How is a transistor biased to be in active state? (c) With the help of necessary circuit diagram, describe briefly how n-p-n transistor in CE configuration amplifies a small sinusoidal input voltage. Write the expression for the ac current gain. 5 2014(D)