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FDP085N10A
N-Channel PowerTrench® MOSFET
100 V, 96 A, 8.5 mΩ
Features
Description
• RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior
switching performance.
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• High Power and Current Handling Capability
• Battery Protection Circuit
• RoHS Compliant
• Motor Drives and Uninterruptible Power Supplies
D
GD
S
G
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 25oC)
±20
V
A
68
(Note 1)
384
A
(Note 2)
269
mJ
6.0
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
Unit
V
96
- Continuous (TC = 100oC)
- Pulsed
FDP085N10A_F102
100
- Derate Above 25oC
188
W
1.25
W/oC
-55 to +175
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FDP085N10A_F102
RθJC
Thermal Resistance, Junction to Case, Max.
0.8
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
1
Unit
o
C/W
www.fairchildsemi.com
FDP085N10A — N-Channel PowerTrench® MOSFET
November 2013
Part Number
FDP085N10A_F102
Top Mark
FDP085N10A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
-
-
V
-
0.07
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V,TC = 25oC
o
ID = 250 μA, Referenced to 25 C
VDS = 80 V, VGS = 0 V
-
-
1
VDS = 80 V, TC = 150oC
-
-
500
VGS = ±20 V, VDS = 0 V
-
-
±100
2.0
-
4.0
V
-
7.35
8.5
mΩ
-
72
-
S
-
2025
2695
pF
-
468
620
pF
-
20
-
pF
-
752
-
pF
-
31
40
nC
-
9.7
-
nC
-
5.0
-
nC
-
7.5
-
nC
-
0.97
-
Ω
-
18
46
ns
-
22
54
ns
-
29
68
ns
-
8
26
ns
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 96 A
VDS = 10 V, ID = 96 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Energy Releted Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshoid to Plateau
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance (G-S)
er
VDS = 50 V, VGS = 0 V,
f = 1 MHz
VDS = 50 V, VGS = 0 V
VGS = 10 V, VDS = 50 V,
ID = 96 A
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 50 V, ID = 96 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
96
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
384
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 96 A
-
-
1.3
V
trr
Reverse Recovery Time
-
59
-
ns
Qrr
Reverse Recovery Charge
VDD = 50 V,VGS = 0 V, ISD = 96 A,
dIF/dt = 100 A/μs
-
80
-
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 13.4 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 96 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
2
www.fairchildsemi.com
FDP085N10A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
FDP085N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
100
ID, Drain Current[A]
ID, Drain Current[A]
500
o
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
10
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
o
2. TC = 25 C
5
0.1
1
VDS, Drain-Source Voltage[V]
1
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
18
2
3
4
5
6
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
o
*Note: TC = 25 C
IS, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
16
VGS = 10V
12
8
VGS = 20V
4
0
100
200
300
ID, Drain Current [A]
o
175 C
100
400
2. 250μs Pulse Test
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
1.5
10
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
*Notes:
1. VGS = 0V
Figure 6. Gate Charge Characteristics
10000
1000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
10
1
0.3
Figure 5. Capacitance Characteristics
100
o
25 C
1
10
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
6
4
2
0
100
3
VDS = 20V
VDS = 50V
VDS = 80V
8
*Note: ID = 96A
0
7
14
21
28
Qg, Total Gate Charge [nC]
35
www.fairchildsemi.com
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.12
1.08
1.04
1.00
0.96
0.92
-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 96A
0.5
-80
200
Figure 9. Maximum Safe Operating Area
ID, Drain Current [A]
100μs
10
Operation in This Area
is Limited by R DS(on)
1 *Notes:
o
1. TC = 25 C
1ms
10ms
DC
VGS= 10V
60
40
20
o
o
2. TJ = 175 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
RθJC = 0.8 C/W
0
25
200
Figure 11. Eoss vs. Drain to Source Voltage
30
IAS, AVALANCHE CURRENT (A)
EOSS, [μJ]
2.0
1.5
1.0
0.5
20
40
60
80
V DS , Drain to Source Voltage [V ]
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 12. Unclamped Inductive
Switching Capability
2.5
0
200
80
100
0.0
0
40
80
120 160
o
TJ, Junction Temperature [ C]
100
10μs
0.1
-40
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
ID, Drain Current [A]
2.0
If R = 0
t AV = (L)(IAS)/(1.3*RATED BV DSS-V DD )
If R = 0
t AV = (L/R)In[(IAS*R)/(1.3*RATED BV DSS-V DD )+1]
10
o
STARTING T J = 25 C
o
STARTING T J = 150 C
1
0.01
100
4
0.1
1
10
100 300
tAV , TIME IN AVALANCHE (ms)
www.fairchildsemi.com
FDP085N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP085N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
o
ZθJC
(t), Thermal
Response
Thermal
Response
[ZθJC[ ]C/W]
1
0.5
PDM
0.2
0.1
t1
0.1
o
1. ZθJC(t) = 0.8 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
0.01
Single pulse
0.005 -5
10
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
t2
*Notes:
0.05
-4
10
-3
-2
10
10
t1, Rectangular
PulseDuration
Duration [sec]
[sec]
Rectangular
Pulse
5
-1
10
1
www.fairchildsemi.com
FDP085N10A — N-Channel PowerTrench® MOSFET
IG = const.
Figure 14. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
6
www.fairchildsemi.com
FDP085N10A — N-Channel PowerTrench® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
7
www.fairchildsemi.com
FDP085N10A — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
8
www.fairchildsemi.com
tm
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
9
www.fairchildsemi.com
FDP085N10A — N-Channel PowerTrench® MOSFET
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