Download C3M0065090D

C3M0065090D
VDS
900 V
ID @ 25˚C Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on)
36 A
65 mΩ
N-Channel Enhancement Mode
Features
•
•
•
•
•
Package
C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
•
•
•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Part Number
Package
Marking
C3M0065090D
TO-247-3
C3M0065090
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
900
V
VGS = 0 V, ID = 100 μA
Note
VDSmax
Drain - Source Voltage
VGSmax
Gate - Source Voltage (dynamic)
-8/+19
V
AC (f >1 Hz)
Note: 1
VGSop
Gate - Source Voltage (static)
-4/+15
V
Static
Note: 2
VGS = 15 V, TC = 25˚C
Fig. 19
ID
Continuous Drain Current
ID(pulse)
36
23
A
VGS = 15 V, TC = 100˚C
Pulsed Drain Current
90
A
EAS
Avalanche energy, Single pulse
110
mJ
ID = 22A, VDD = 50V
PD
Power Dissipation
125
W
TC=25˚C, TJ = 150 ˚C
-55 to
+150
˚C
TJ , Tstg
Operating Junction and Storage Temperature
TL
Solder Temperature
260
˚C
Md
Mounting Torque
1
8.8
Nm
lbf-in
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
Value
C3M0065090D Rev. B, 03-2017
Pulse width tP limited by Tjmax
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
Fig. 22
Fig. 20
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
900
1.8
2.1
3.5
1.6
Unit
Test Conditions
V
VGS = 0 V, ID = 100 μA
V
VDS = VGS, ID = 5 mA
V
VDS = VGS, ID = 5 mA, TJ = 150ºC
IDSS
Zero Gate Voltage Drain Current
1
100
μA
VDS = 900 V, VGS = 0 V
IGSS
Gate-Source Leakage Current
10
250
nA
VGS = 15 V, VDS = 0 V
65
78
RDS(on)
Drain-Source On-State Resistance
90
13.6
gfs
Transconductance
Ciss
Input Capacitance
660
Coss
Output Capacitance
60
Crss
Reverse Transfer Capacitance
4.0
Eoss
Coss Stored Energy
16
EON
Turn-On Switching Energy (Body Diode FWD)
226
EOFF
Turn Off Switching Energy (Body Diode FWD)
36
td(on)
Turn-On Delay Time
35
Rise Time
11
Turn-Off Delay Time
23
Fall Time
9
tr
td(off)
tf
RG(int)
Internal Gate Resistance
4.7
Qgs
Gate to Source Charge
7.5
Qgd
Gate to Drain Charge
12
Qg
Total Gate Charge
VGS = 15 V, ID = 20 A
mΩ
VDS= 20 V, IDS= 20 A
VDS= 20 V, IDS= 20 A, TJ = 150ºC
f = 1 MHz
VAC = 25 mV
μJ
Fig. 7
Fig. 17,
18
VGS = 0 V, VDS = 600 V
pF
Fig. 11
Fig. 4,
5, 6
VGS = 15 V, ID = 20A, TJ = 150ºC
S
11.6
Note
Fig. 16
μJ
VDS = 400 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 2.5Ω, L= 77 μH, TJ = 150ºC
Fig. 26,
Note 3
ns
VDD = 400 V, VGS = -4 V/15 V
ID = 20 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Fig. 27
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 400 V, VGS = -4 V/15 V
ID = 20 A
Per IEC60747-8-4 pg 21
30.4
Fig. 12
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol
VSD
IS
IS, pulse
Parameter
Typ.
Diode Forward Voltage
Max.
Unit
Test Conditions
Note
4.8
V
VGS = -4 V, ISD = 10 A
4.4
V
VGS = -4 V, ISD = 10 A, TJ = 150 °C
23.5
A
VGS = -4 V
Note 1
90
A
VGS = -4 V, pulse width tP limited by Tjmax
Note 1
VGS = -4 V, ISD = 20 A, VR = 400 V
dif/dt = 950 A/µs, TJ = 150 °C
Note 1
Continuous Diode Forward Current
Diode pulse Current
trr
Reverse Recover time
35
ns
Qrr
Reverse Recovery Charge
150
nC
Irrm
Peak Reverse Recovery Current
5.6
A
Fig. 8,
9, 10
Thermal Characteristics
Symbol
Parameter
Max.
RθJC
Thermal Resistance from Junction to Case
1.0
RθJA
Thermal Resistance From Junction to Ambient
40
Unit
Test Conditions
°C/W
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2
C3M0065090D Rev. B, 03-2017
Note
Fig. 21
Typical Performance
70
Drain-Source Current, IDS (A)
80
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 15 V
70
VGS = 13 V
60
Drain-Source Current, IDS (A)
80
VGS = 11 V
50
40
VGS = 9 V
30
20
10
VGS = 15 V
VGS = 13 V
VGS = 11 V
60
50
VGS = 9 V
40
30
20
VGS = 7 V
10
VGS = 7 V
0
0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0.0
2.5
5.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
80
Conditions:
TJ = 150 °C
tp < 200 µs
2.0
VGS = 15 V
VGS = 11 V
1.6
60
VGS = 9 V
50
40
30
VGS = 7 V
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.0
0.0
2.5
5.0
7.5
10.0
12.5
-50
15.0
-25
0
Figure 3. Output Characteristics TJ = 150 ºC
Conditions:
VGS = 15 V
tp < 200 µs
TJ = 150 °C
80
TJ = -55 °C
60
75
100
125
150
Conditions:
IDS = 20 A
tp < 200 µs
120
On Resistance, RDS On (mOhms)
100
50
Figure 4. Normalized On-Resistance vs. Temperature
140
120
25
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
On Resistance, RDS On (mOhms)
15.0
0.2
0
TJ = 25 °C
40
20
100
VGS = 11 V
80
VGS = 13 V
60
VGS = 15 V
40
20
0
0
0
10
20
30
40
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
12.5
Conditions:
IDS = 20 A
VGS = 20 V
tp < 200 µs
1.8
VGS = 13 V
10.0
Figure 2. Output Characteristics TJ = 25 ºC
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
70
7.5
Drain-Source Voltage, VDS (V)
C3M0065090D Rev. B, 03-2017
50
60
-50
-25
0
25
50
75
100
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
125
150
Typical Performance
-10
Conditions:
VDS = 20 V
tp < 200 µs
-8
-6
-4
-2
0
0
40
TJ = 150 °C
VGS = -4 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
50
30
TJ = 25 °C
20
TJ = -55 °C
10
VGS = 0 V
-20
VGS = -2 V
-40
-60
Conditions:
TJ = -55°C
tp < 200 µs
0
0
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-10
-8
-6
-4
-80
Drain-Source Voltage VDS (V)
Figure 8. Body Diode Characteristic at -55 ºC
-2
0
-10
-8
-6
-4
-2
0
Drain-Source Current, IDS (A)
VGS = -4 V
-20
VGS = 0 V
VGS = -2 V
-40
0
Drain-Source Current, IDS (A)
0
VGS = -4 V
-20
VGS = 0 V
VGS = -2 V
-40
-60
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
-60
Conditions:
TJ = 150°C
tp < 200 µs
-80
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
4
Conditions:
IDS = 20 A
IGS = 100 mA
VDS = 400 V
TJ = 25 °C
12
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
16
Conditons
VGS = VDS
IDS = 5 mA
2.5
C3M0065090D Rev. B, 03-2017
-80
150
8
4
0
-4
0
5
10
15
20
25
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
30
35
Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = 0 V
VGS = 5 V
-20
VGS = 10 V
-40
VGS = 15 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 0 V
VGS = 5 V
-20
VGS = 10 V
-40
VGS = 15 V
-60
-60
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
-80
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-7
-8
-6
-5
-4
-3
-2
Figure 14. 3rd Quadrant Characteristic at 25 ºC
30
0
-1
-80
Drain-Source Voltage VDS (V)
0
25
-20
VGS = 5 V
-40
VGS = 10 V
VGS = 15 V
Stored Energy, EOSS (µJ)
Drain-Source Current, IDS (A)
VGS = 0 V
20
15
10
5
-60
Conditions:
TJ = 150 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
0
0
-80
100
600
700
800
900
1000
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
1000
Capacitance (pF)
Capacitance (pF)
500
10000
Ciss
Coss
100
Crss
10
400
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
1000
300
Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
200
Ciss
100
Coss
10
Crss
1
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
C3M0065090D Rev. B, 03-2017
200
0
100
200
300
400
500
600
Drain-Source Voltage, VDS (V)
700
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
800
900
Typical Performance
Drain-Source Continous Current, IDS (DC) (A)
40
140
Conditions:
TJ ≤ 150 °C
Maximum Dissipated Power, Ptot (W)
35
30
25
20
15
10
5
100
0
-55
-30
-5
20
45
70
95
120
Conditions:
TJ ≤ 150 °C
120
80
60
40
20
0
145
-55
Case Temperature, TC (°C)
-30
-5
20
45
70
95
120
145
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
Junction To Case Impedance, ZthJC (oC/W)
100.00
1
Drain-Source Current, IDS (A)
0.5
0.3
0.1
100E-3
0.05
0.02
1.00
0.10
0.01
10E-6
100E-6
1E-3
10E-3
100E-3
Time, tp (s)
1
800
Conditions:
TJ = 25 °C
VDD = 400 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0065090D
L = 77 μH
700
600
ETotal
600
EOn
400
EOff
200
10
100
1000
Figure 22. Safe Operating Area
Switching Loss (uJ)
Switching Loss (uJ)
1000
1
Drain-Source Voltage, VDS (V)
800
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0065090D
L = 77 μH
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.1
10
Figure 21. Transient Thermal Impedance
(Junction - Case)
1200
1 ms
100 ms
0.01
1E-6
100 µs
10.00
SinglePulse
10E-3
500
ETotal
400
EOn
300
200
EOff
100
0
0
0
10
20
30
40
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
6
10 µs
Limited by RDS On
C3M0065090D Rev. B, 03-2017
50
0
10
20
30
40
Drain to Source Current, IDS (A)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 400V)
50
Typical Performance
400
Switching Loss (uJ)
400
Conditions:
TJ = 25 °C
VDD = 400 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0065090D
L = 77 μH
Conditions:
IDS
= 20 A
DS
VDD
= 400 V
DD
RG(ext)
= 2.5 Ω
G(ext)
VGS
= -4V/+15 V
GS
FWD = C3M0065090D
L = 77 μH
350
300
ETotal
Switching
Switching Loss
Loss (uJ)
(uJ)
500
300
EOn
200
100
250
ETotal
Total
200
EOn
On
150
100
EOff
50
0
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Conditions:
TJ = 25 °C
VDD = 400 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0065090D
L = 77 μH
Switching Loss (uJ)
50
40
0
25
50
75
100
125
Junction Temperature, TJJ (°C)
td(on)
30
td(off)
20
tr
tf
10
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 28. Switching Times Definition
Figure 27. Switching Times vs. RG(ext)
35
Conditons:
VDD = 50 V
Avalanche Current (A)
30
25
20
15
10
5
0
0
20
40
60
80
Time in Avalanche TAV (us)
Figure 29. Single Avalanche SOA curve
7
C3M0065090D Rev. B, 03-2017
150
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
60
EOff
Off
100
175
Test Circuit Schematic
Q1
RG
VDC
C3M0065090D
VGS= - 4V
Q2
RG
C3M0065090D
D.U.T
Figure 30. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0065090D Rev. B, 03-2017
Package Dimensions
POS
Package TO-247-3
A
T
V
U
W
Pinout Information:
•
•
•
Pin 1 = Gate
Pin 2, 4 = Drain
Pin 3 = Source
Recommended Solder Pad Layout
TO-247-3
9
C3M0065090D Rev. B, 03-2017
Inches
Millimeters
Min
Max
Min
Max
.190
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b2
.075
.085
1.91
2.16
b3
.113
.133
2.87
3.38
b4
.113
.123
2.87
3.13
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
D2
.037
.049
0.95
1.25
E
.620
.635
15.75
16.13
E1
.516
.557
13.10
14.15
E2
.145
.201
3.68
5.10
E3
.039
.075
1.00
1.90
E4
.487
.529
12.38
13.43
e
.214 BSC
N
3
5.44 BSC
3
L
.780
.800
19.81
20.32
L1
.161
.173
4.10
4.40
ØP
.138
.144
3.51
3.65
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
9˚
11˚
9˚
11˚
U
9˚
11˚
9˚
11˚
V
2˚
8˚
2˚
8˚
W
2˚
8˚
2˚
8˚
Notes
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
SPICE Models: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Copyright © 2017 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
10
C3M0065090D Rev. B, 03-2017
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.wolfspeed.com/power