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M3P100A-80 thru M3P100A-160 Three Phase Silicon Bridge Rectifier VRRM = 800 V - 1600 V IF = 100 A Features • High Surge Capability • Types up to 1600 V VRRM Three Phase Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions M3P100A-80 M3P100A-160 Unit Repetitive peak reverse voltage VRRM 800 1600 V Non-repetitive peak reverse voltage VRSM 880 1700 V IF TC ≤ 103 °C 100 100 A Surge non-repetitive forward current, Half Sine Wave IFSM TC = 25 °C, tp = 8.3 ms 1200 1200 A I2 t Operating temperature Storage temperature I2 t Tj Tstg 6000 -55 to 150 -55 to 150 6000 -55 to 150 -55 to 150 A2 S °C °C Conditions M3P100A-80 M3P100A-160 Unit IF = 100 A, Tj = 25 °C VR = VRRM, Tj = 150 °C 1.15 10 1.15 10 V mA 0.22 0.22 °C/W Continuous forward current Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage Reverse current VF Thermal characteristics Thermal resistance, junction - case Feb 2016 RthJC Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 M3P100A-80 thru M3P100A-160 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 M3P100A-80 thru M3P100A-160 Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3