Download CP30TD1-12A

APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CP30TD1-12A
Pre.
Apr.
H.Tanaka, M.Tabata, M.Seo
T.Igarashi 14,Jul,’05
Rev.
LOW POWER SWITCHING USE
TRANSFER MOLD TYPE,INSULATED TYPE
TENTATIVE
●IC.........................................30A
●VCES...................................600V
●Insulated Type
●DIP-CIB Module
3φ Inverter+3φ Converter+Brak e
APPLICATION
AC & DC motor controls, General purpose inverters
MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Inverter Part
Symbol
VCES
VGES
IC
ICM
PC
IE (Note2)
IEM (Note2)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
Condition
G-E Short
C-E Short
DC, Tc=100°C
Pulse
Tc=25°C
DC, Tc=56°C
Pulse
(Note 1)
(Note 3)
(Note 1)
(Note 3)
Rating
Units
600
±20
(30)
(60)
(－)
(30)
(60)
V
V
A
A
W
A
A
Rating
Units
600
±20
(15)
(30)
(－)
600
(15)
V
V
A
A
W
V
A
Rating
(800)
(220)
(30)
(－)
Units
V
V
A
A
(－)
As
Brake Part
Symbol
VCES
VGES
IC
ICM
PC (Note4)
VRRM
IFM (Note4)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Condition
G-E Short
C-E Short
DC, Tc=100°C
Pulse
Tc=25°C
Clamp diode part
Clamp diode part
(Note 1)
(Note 3)
Converter Part
Symbol
VRRM
Ea
IO
IFSM
2
It
Parameter
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge forward current
2
I t for fusing
Condition
3φ rectifying circuit
1/2cycle at 60Hz,Peak value
Non-repetitive
Value for 1cycle of surge current
CGS-3157
2
1 - 4
APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CP30TD1-12A
LOW POWER SWITCHING USE
TRANSFER MOLD TYPE,INSULATED TYPE
Common Rating
Symbol
Tj
Tstg
Viso
-
Parameter
junction temperature
(Note 5)
Storage temperature
Isolation voltage
Mounting torque
Weight
Condition
Inverter, brake, converter part
60Hz, Sinusoidal AC 1 min.
Applied between pins and heat-sink
Screw: M4
Recommended: 1.18N·m
Typical value
Rating
-20 ～ 125
-20 ～ 125
2500
Units
°C
°C
Vrms
(0.98～1.47)
52
N·m
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Inverter Part
Symbol
Parameter
ICES
VGE(th)
IGES
VCE(sat)
Collector cutoff current
Gate emitter threshold voltage
Gate emitter cutoff current
Collector emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC (Note1)
trr (Note1)
Qrr (Note1)
Rth(j-c)Q
Rth(j-c)R
Rg
Input capacitance
Output Capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Conditions
VCE=VCES, VGE=0V
IC=3.0mA, VCE=10V
VGE=20V, VCE=0V
IC=30A
Tj=25°C
VGE=15V (Note6) Tj=125°C
VCE=10V, VGE=0V
f=1MHz
VCC=300V,IC=30A,VGE=15V
VCC=300V, IC=30A
VGE=±15V, RG=**Ω
Tj=25°C
Inductive load
IE=30A,VGE=0V
VCC=300V, IC=(15A)
VGE=±15V, RG=**Ω,Tj=25°C
IGBT part, per 1/6 module
FWDi part, per 1/6 module
External gate resistance
CGS-3157
Min.
－
(6.5)
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
(－)
Characteristics
Typ.
Max.
－
1
(7.5)
(8.5)
－
(1)
(1.8)
(2.5)
(2.0)
－
－
(－)
－
(－)
－
(－)
(－)
－
－
(－)
－
(－)
－
(－)
－
(－)
(1.7)
(2.2)
(－)
－
(－)
－
(1.1)
－
(1.7)
－
－
(－)
2 - 4
Units
mA
V
μA
V
nF
nC
ns
V
ns
μC
°C/W
Ω
APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CP30TD1-12A
LOW POWER SWITCHING USE
TRANSFER MOLD TYPE,INSULATED TYPE
Brake Part
Symbol
Parameter
ICES
VGE(th)
IGES
VCE(sat)
Collector cutoff current
Gate emitter threshold voltage
Gate emitter cutoff current
Collector emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
Tr
td(off)
Tf
VFM
Trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rg
Input capacitance
Output Capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance
Parameter
Repetitive reverse current
Forward voltage drop
Thermal resistance
NTC Thermistor Part
Symbol
RTH
Resistance
B(25/100)
B Constant
Common Rating
Symbol
Rth(c-f)
VCE=VCES, VGE=0V
IC=1.5mA, VCE=10V
VGE=20V, VCE=0V
IC=(15)A
Tj=25°C
VGE=15V (Note6) Tj=125°C
VCE=10V, VGE=0V
f=1MHz
VCC=300V,IC=(15)A,VGE=15V
VCC=300V, IC=(15)A
VGE=±15V, RG= **Ω
Tj=25°C
Inductive load
IF=(15)A,Clamp diode part
VCC=300V, IC=(15)A,
VGE=±15V, RG=**Ω,Tj=25°C
IGBT part
FWDi part
External gate resistance
Converter Diode Part
Symbol
IRRM
VFM
Rth(j-c)
Conditions
Parameter
Conditions
VR=VRRM, Tj=125°C
IF=30A
Per 1/6 module
Conditions
Tc=25°C
Resistance at 25°C,100℃
(Note 7)
Parameter
Contact thermal resistance
Conditions
Case to fin,thermal compound
applied (1module)
Characteristics
Min.
Typ.
Max.
－
－
1
(6.5)
(7.5)
(8.5)
－
－
(1)
－
(1.8)
(2.5)
－
(2.0)
－
－
－
(－)
－
－
(－)
－
－
(－)
－
(－)
－
－
－
(－)
－
－
(－)
－
－
(－)
－
－
(－)
－
(1.7)
(2.2)
－
(－)
－
－
(－)
－
－
(1.5)
－
－
(2.1)
－
(－)
－
(－)
Characteristics
Min.
Typ.
Max.
－
－
(1.0)
－
(－)
(－)
－
(1.1)
－
Characteristics
Min.
Typ.
Max.
(9.5)
10.0
(10.5)
－
3450
－
mA
V
μA
V
nF
nC
ns
V
ns
μC
°C/W
Ω
Units
mA
V
°C/W
Units
kΩ
－
Characteristics
Min.
Typ.
Max.
－
Units
－
K
Units
°C/W
Note1
Note2
Note3
Note4
Note5
Tc is measured at the position just underneath the power chip.
IE, VEC, trr, and Qrr represent characteristics of the anti-paralleled emitter to collector free-wheel diode(FWDi).
Pulse width and repetition rate should be such that the device junction temp.(Tj) does not exceed Tjmax rating.
Junction temperature(Tj) should not increase beyond 150°C.
The maximum junction temperature rating of the power chips integrated inside DIP-CIB is 150°C. However, to
ensure safe operation of DIP-CIB, the average junction temperature should be limited to below 125°C.
Note5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note6 B = (InR1-InR2)/(1/T1-1/T2) where R1 is the resistance at T1(K), R2 the resistance at T2(K)
CGS-3157
3 - 4
APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CP30TD1-12A
LOW POWER SWITCHING USE
TRANSFER MOLD TYPE,INSULATED TYPE
Outline Drawing
TERMINAL CODE
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
TH1
TH2
P1
P
GUP
EUP
GVP
EVP
GWP
EWP
GB
N(B)
B
R
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
26.
S
T
N1
GUN
UN
GVN
VN
GWN
WN
U
V
W
Circuit Diagram
P1
R
S
T
N1
P
GUP
GVP
GWP
B
EUP
EVP
EWP
GB
GUN
GVN
GWN
N(B)
UN U
CGS-3157
VN
V
WN W
TH1
TH2
4 - 4