Download CHT-NEPTUNE PRELIMINARY DATASHEET High

The Leader in High Temperature
Semiconductor Solutions
Version: 3.4
CHT-NEPTUNE
PRELIMINARY DATASHEET
High-Temperature
1200V/10A, Silicon Carbide MOSFET
General description
Features
high-temperature,

Specified from -55 to +225°C (Tj)
high-voltage, Silicon Carbide MOSFET
switch. It is available in a metal TO-257

VDS Max: 1200V

IDS Max (continuous):
CHT-NEPTUNE
is
a
package – the metal case being isolated
from the switch terminals. The product is
guaranteed for normal operation on the full
o

range -55°C to +225°C. The device has a
breakdown voltage in excess of 1200V and
10A @ 225°C (Tj)
Typical On-resistance:
o
RDSon= 90 mΩ @ 25°C
o
RDSon= 150 mΩ @ 225°C
is capable of switching currents up to 10A
at the maximum temperature (225°C). The

High Speed Switching

Voltage control: VGS=-4V/20V
device features a body diode that can be
used as free-wheeling diode.

Low capacitance: CGS=1915 pF

Package: TO-257
The Silicon Carbide die used inside “CHTPLA8543C-TO257” product has reached
End-Of-Life status. CISSOID did validate
Applications

Power inverters including DC-AC
power supplies, motor drives & actuator controls
Benefits:

DC-DC converters

High-power density converters (support of high-frequency switching and
reduced cooling)

AC-DC converters and battery
chargers

Extended lifetime and high reliability

Harsh environments and high temperature power converters

Seamless driving with CHT-Themis®
Atlas and HADES gate driver solutions
an alternative die which offers very similar
performances. The product new version is
named “CHT-PLA8543D-TO257”.
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CHT-NEPTUNE – PRELIMINARY DATASHEET
Package Configuration
FRONT VIEW
D
G
S
1 2
3
TO-257 (Pin1= Drain; Pin2= Source; Pin3= Gate) (case floating)
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CHT-NEPTUNE – PRELIMINARY DATASHEET
Absolute Maximum Ratings
Operating Conditions
Gate-to-Source voltage VGS
-5V to 25V
Drain-to-Source voltage VDS -0.5V to 1200V
Drain current IDS (cont.)
12A
Max Junction temperature Tjmax
225°C
Power dissipation (*)
30W
Gate-to-Source voltage VGS
-4V to 20V
Drain-to-Source voltage VDS -0.5V to 1200V
Max DC drain current IDS
10A
Max pulsed drain current
10A
Junction temperature
-55°C to +225°C
ESD Rating (expected)
Human Body Model
>1kV
(*): including switching losses
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Electrical characteristics
Unless otherwise stated, Tj =25°C. Bold figures point out values valid over the whole temperature range (Tj =-55°C to
+225°C).
Parameter
Symbol
Condition
Min
Typ
Max Unit
Tj=25°C ; ID = 1mA; VDS =20V
2.5
V
Threshold voltage
VTH
Tj=225°C ; ID = 1mA; VDS =20V
1
V
VGS =0V, VDS=1200V, Tj=25°C
20
nA
Drain cut-off current
IDSS
VGS =0V, VDS =1200V, Tj=225°C
10
µA
VGS =-5V, VDS =1200V, Tj=225°C
0.27
µA
VGS =20V, VDS =0V, Tj=25°C
10
nA
Gate leakage current
IGSS
VGS =20V, VDS =0V,Tj=225°C
100
nA
VGS =20V, ID=10A, Tj=25°C
90
mΩ
Static drain-to-source resistance
RDSon
VGS =20V, ID=10A, Tj=225°C
150
mΩ
Breakdown drain-to-source volt1200
VBRDS
VGS =0V; ID = 100 µA
V
age (DC characterization)
VGS =0VDC, VDS =600VDC
Input capacitance
CISS
1915
pF
f = 1 MHz
Output capacitance
COSS
120
pF
VAC = 25mV
Feedback capacitance
CRSS
10
pF
Turn-on delay time
Td(ON)
17
ns
Rise time
Tr
14
ns
VDS=600V; VGS= -4/20V;
Turn-off delay time
Td(OFF)
62
ns
ID = 10A;
Fall time
Tf
36
ns
RG= 6.8Ω; L = 856µH
Turn-On Switching Loss
Eon
205
µJ
Turn-Off Switching Loss
Eoff
173
µJ
VGS =0VDC; f = 1 MHz;
Internal gate resistance
RG
5
Ω
VAC = 25mV
Gate to Source Charge
QGS
23
nC
Tj=25°C ;VDS= 600V;
Gate to Drain Charge
QGD
43
nC
ID = 10A; VGS = -2/20V
Total Gate Charge
QG
90
nC
Thermal Characteristics
Parameter
Junction-to-Case Thermal resistance
Symbol
Condition
Min
RΘJC
Typ
Max
1.1
Unit
°C/W
Reverse Diode Characteristics
Unless otherwise stated, Tj =25°C. Bold figures point out values valid over the whole temperature range (Tj =-55°C to
+225°C). Timing definitions according to JEDEC 24 page 27
Parameter
Symbol
Diode forward voltage
VF
Reverse recovery time
Trr
Peak reverse recovery current
Iprr
Condition
Tj=25°C; VGS=-5V; IF=10A
Tj=25°C; VGS=-2V; IF=10A
Tj=25°C; VDS=300V;
VGS = -5V;
IF=2A;dIF/dt = 100A/µS
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Min
Typ
3.5
3.1
50
2.3
Max
Unit
V
V
ns
A
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CHT-NEPTUNE – PRELIMINARY DATASHEET
Typical Performance Characteristics
20
20
VGS=6V
15
VGS=6V
15
VGS=10V
10
VGS=12V
VGS=8V
I D (A)
I D (A)
VGS=8V
VGS=10V
10
VGS=12V
VGS=14V
VGS=14V
5
VGS=16V
5
VGS=16V
VGS=18V
VGS=18V
VGS=20V
0
0
2
4
6
8
10 12
VDS (V)
14
16
18
0
20
Figure 1: Drain current vs VDS
(TJ=25°C)
2
4
6
8
10 12
VDS (V)
14
16
18
20
Figure 2: Drain current vs VDS
(TJ=225°C)
20
0.18
25ºC
125ºC
175ºC
225ºC
15
VGS=20V
0
0.16
RDSON (Ω)
ID (A)
0.14
10
T=-55°C
T=25°C
0.12
T=125°C
0.1
5
T=175°C
0.08
T=225°C
0.06
0
0
0
2
4
6
8
5
10
15
20
I D (A)
10
V GS (V)
Figure 4: On-state drain source resistance
vs. Drain current and temperature (VGS =20V)
Figure 3: Drain current vs VGS voltage
Capacitance (F)
1.00E-08
1.00E-09
Ciss
Coss
1.00E-10
Crss
1.00E-11
0
100
200
300
400
500
VDS (V)
Figure 5:Typical capacitances vs VDS
(Tj=25°C)
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CHT-NEPTUNE – PRELIMINARY DATASHEET
Package Dimensions
5.0
10.6
1.0
17.5-18.5
16.5
13.5
10.6
Ø3.5
2.54
2.9
Ø0.8
Drawing TO257 (mm)
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CHT-NEPTUNE – PRELIMINARY DATASHEET
Ordering Information
Product Name
CHT-NEPTUNE
Ordering Reference
CHT-PLA8543C-TO257-T
Package
TO-257 metal can
Marking
CHT-PLA8543C
The Silicon Carbide die used inside “CHT-PLA8543C-TO257” product has reached End-OfLife status. CISSOID did validate an alternative die which offers very similar performances.
The product new version is named “CHT-PLA8543D-TO257”.
During Last Time Buy period, till 10 of June 2017, only legacy customers can order “CHTPLA8543C-TO257” product. After Last Time Buy End Date, CISSOID will not accept any order of the “CHT-PLA8543C-TO257” product. CISSOID will acknowledge orders of “CHTPLA8543D-TO257” product from 15 June 2017 onwards.
Contact & Ordering
CISSOID S.A.
Headquarters and
contact EMEA:
CISSOID S.A. – Rue Francqui, 3 – 1435 Mont Saint Guibert - Belgium
T : +32 10 48 92 10 - F: +32 10 88 98 75
Email: [email protected]
Sales
Representatives:
Visit our website: http://www.cissoid.com
Disclaimer
Neither CISSOID, nor any of its directors, employees or affiliates make any representations or extend any warranties
of any kind, either express or implied, including but not limited to warranties of merchantability, fitness for a particular
purpose, and the absence of latent or other defects, whether or not discoverable. In no event shall CISSOID, its directors, employees and affiliates be liable for direct, indirect, special, incidental or consequential damages of any kind
arising out of the use of its circuits and their documentation, even if they have been advised of the possibility of such
a damage. The circuits are provided “as is”. CISSOID has no obligation to provide maintenance, support, updates, or
modifications.
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