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Title (en)
Fluorine process for cleaning semiconductor process chamber
Title (de)
Verfahren zur Reinigung einer Halbleiterbehandlungskammer mit Fluor
Title (fr)
Procédé pour nettoyer une chambre de traitement de semi-conducteurs utilisant fluor
Publication
EP 1138802 A2 20011004 (EN)
Application
EP 01302849 A 20010327
Priority
US 53569200 A 20000327
Abstract (en)
A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor
reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of
atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas
cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming
gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.
Inventor
• GOTO HARUHIRO HARRY (US)
• HARSHBARGER WILLIAM R (US)
• SHANG QUANYUAN (US)
• LAW KAM S (US)
Applicant
APPLIED MATERIALS INC (US)
IPC 1-7 (main, further and additional classification)
C23C 16/44; B08B 7/00; H01L 21/00
IPC 8 full level (invention and additional information)
B08B 5/00 (2006.01); B08B 7/00 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); H01L 21/205 (2006.01); H01L 21/302 (2006.01);
H01L 21/3065 (2006.01)
CPC (invention and additional information)
C23C 16/4405 (2013.01); Y02C 20/30 (2013.01); Y10S 134/902 (2013.01); Y10S 438/905 (2013.01)
Cited by
WO2013092770A1; WO2011051409A1; WO2011051410A1; WO2013092777A1; WO2011012185A1; EP1932941A1; EP1542264A4;
EP2608899A4; EP2944385A1; EP2608900A4; WO03054247A3; US2012214312A1; CN102597309A; CN102713000A; WO03021653A1;
EP1596419A3; CN103026451A; EP2609614A4; US6886573B2; US7322368B2
Designated contracting state (EPC)
BE CH DE FR GB LI NL
EPO simple patent family
EP 1138802 A2 20011004; EP 1138802 A3 20031126; EP 2175046 A2 20100414; EP 2175046 A3 20100421; JP 2002033289 A 20020131; KR
100455459 B1 20041108; KR 20010089880 A 20011012; TW 494465 B 20020711; US 2003010354 A1 20030116; US 2003192569 A1 20031016;
US 6880561 B2 20050419
INPADOC legal status
2012-08-08 [18D] DEEMED TO BE WITHDRAWN
- Effective date : 20120211
2009-07-29 [17Q] FIRST EXAMINATION REPORT
- Effective date : 20090624
2004-08-18 [AKX] PAYMENT OF DESIGNATION FEES
- Designated State(s) : BE CH DE FR GB LI NL
2004-07-28 [17P] REQUEST FOR EXAMINATION FILED
- Effective date : 20040525
2003-11-26 [AK] DESIGNATED CONTRACTING STATES:
- Kind Code of Ref Document : A3
- Designated State(s) : AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
2003-11-26 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO
- Countries :
AL LT LV MK RO SI
2003-11-26 [RIC1] CLASSIFICATION (CORRECTION)
- IPC : 7C 23C 16/44 A
2003-11-26 [RIC1] CLASSIFICATION (CORRECTION)
- IPC : 7H 01L 21/00 B
2003-11-26 [RIC1] CLASSIFICATION (CORRECTION)
- IPC : 7B 08B 7/00 B
2001-10-04 [AK] DESIGNATED CONTRACTING STATES:
- Kind Code of Ref Document : A2
- Designated State(s) : AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
2001-10-04 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO
- Free text :
AL;LT;LV;MK;RO;SI
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