Download 2SA1179N/2SC2812N

Ordering number : EN7198B
2SA1179N/2SC2812N
Bipolar Transistor
http://onsemi.com
(–)50V, (–)150mA, Low VCE(sat), (PNP)NPN Single CPA
Features
•
•
Miniature package facilitates miniaturization in end products
High breakdown voltage
Specifications
( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Conditions
Ratings
(--)55
V
(--)50
V
VEBO
IC
(--)5
ICP
IB
PC
Base Current
Collector Dissipation
Unit
VCBO
VCEO
Junction Temperature
Tj
Storage Temperature
Tstg
V
(--)150
mA
(--)300
mA
(--)30
mA
200
mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
unit : mm (typ)
7053-001
• Package
• JEITA, JEDEC
0.45
0.55
0.13
1.3
0.95
2SA1179N6-TB-E
2SA1179N6-CPA-TB-E
2SC2812N6-TB-E
2SC2812N6-CPA-TB-E
: CPA
: SC-59, TO-236, SOT-23,
TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
0 to 0.1
0.55
2
2.4
3
1
0.2 MIN
Package Dimensions
TB
1.3 MAX
1.9
2.93
Semiconductor Components Industries, LLC, 2013
August, 2013
L
LOT No.
2SA1179N
LOT No.
M
LOT No.
CPA
Marking
LOT No.
1.0
1 : Base
2 : Emitter
3 : Collector
2SC2812N
91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637 No.7198-1/7
2SA1179N / 2SC2812N
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Ratings
Conditions
min
Emitter Cutoff Current
ICBO
IEBO
VCB=(--)35V, IE=0A
VEB=(--)4V, IC=0A
DC Current Gain
hFE
Gain-Bandwidth Product
fT
VCE=(--)6V, IC=(--)1mA
2SC2812N : VCE=6V, IC=1mA
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
typ
200
VCB=(--)6V, f=1MHz
IC=(--)50mA, IB=(--)5mA
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)EBO
(--)0.1
μA
(--)0.1
μA
400
2SA1179N : VCE=--6V, IC=--10mA
V(BR)CBO
V(BR)CEO
Unit
max
100
MHz
(180)
MHz
(4.0)3.0
pF
(--0.15)0.1
IC=(--)50mA, IB=(--)5mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
(--)0.5
V
(--)1.0
V
(--)55
V
(--)50
V
(--)5
V
* : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws :
Rank
hFE
6
200 to 400
Ordering Information
Package
Shipping
2SA1179N6-TB-E
Device
CPA
3,000pcs./reel
2SA1179N6-CPA-TB-E
CPA
3,000pcs./reel
2SC2812N6-TB-E
CPA
3,000pcs./reel
2SC2812N6-CPA-TB-E
CPA
3,000pcs./reel
IC -- VCE
μA
--50
A
--45μ
A
0
--4 μ
A
--35μ
--30μA
--25μA
--12
--8
Pb Free
IC -- VCE
20
2SA1179N
--20μA
--15μA
--10μA
--4
2SC2812N
50μA
45μA
Collector Current, IC -- mA
Collector Current, IC -- mA
--16
memo
--5μA
16
40μA
35μA
12
30μA
25μA
20μA
8
15μA
4
10μA
5μA
IB=0μA
0
0
--10
--20
--30
--40
Collector-to-Emitter Voltage, VCE -- V
0
0
--50
10
20
30
40
Collector-to-Emitter Voltage, VCE -- V
IT04195
IC -- VBE
--240
50
IT04196
IC -- VBE
240
2SA1179N
VCE= --6V
2SC2812N
VCE=6V
--200
--160
--120
--80
160
120
Ta=75°
C
25°C
--25°C
Collector Current, IC -- mA
200
Ta=75°
C
25°C
--25°C
Collector Current, IC -- mA
IB=0μA
80
40
--40
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
IT04197
0
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, VBE -- V
1.0
1.2
IT04198
No.7198-2/7
2SA1179N / 2SC2812N
hFE -- IC
1000
hFE -- IC
1000
2SA1179N
VCE= --6V
7
2SC2812N
VCE=6V
7
DC Current Gain, hFE
DC Current Gain, hFE
5
Ta=75°C
25°C
3
--25°C
2
5
Ta=75°C
3
--25°C
25°C
2
100
7
5
--0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
Collector Current, IC -- mA
Gain-Bandwidth Product, f T -- MHz
5
3
2
100
7
5
2
3
5
7 --10
2
3
5
7 --100
2
Collector Current, IC -- mA
2 3
5 7 10
2 3
5 7 100 2 3
IT04200
f T -- IC
2SC2812N
VCE=6V
5
3
2
100
7
5
3
1.0
3
2
3
5
7
2
10
3
5
7
Cob -- VCB
2
2SC2812N
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
3
IT04202
2SA1179N
f=1MHz
10
7
5
3
2
10
7
5
3
2
1.0
1.0
7
5
7
5
7 --1.0
2
3
5
7
2
--10
3
5
Collector-to-Base Voltage, VCB -- V
7 --100
IT04203
2
--0.1
7
5
3
3
5
7 --10
2
3
5
2
1.0
3
7 --100
Collector Current, IC -- mA
2
3
5
IT04205
5
7
2
10
3
5
Collector-to-Base Voltage, VCB -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
7
7 100
IT04204
VCE(sat) -- IC
5
2SA1179N
IC / IB= --10
2
--1.0
5
VCE(sat) -- IC
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
100
Collector Current, IC -- mA
IT04201
Cob -- VCB
2
5 7 1.0
7
2SA1179N
VCE= --6V
3
--1.0
2 3
Collector Current, IC -- mA
f T -- IC
7
Gain-Bandwidth Product, f T -- MHz
100
0.1
5 7--100 2 3
IT04199
2SC2812N
IC / IB=10
3
2
0.1
7
5
3
2
0.01
1.0
2
3
5
7
10
2
3
5
7 100
Collector Current, IC -- mA
2
3
5
IT04206
No.7198-3/7
2SA1179N / 2SC2812N
ASO
s
m
s
s
op
0m
DC
7
5
10
0.1
100μs
1m
IC=0.15A
2
10
Collector Current, IC -- A
10μs
ICP=0.3A
3
er
ati
on
3
2
0.01
7
5
3
2
Ta=25°C
Mounted on a glass epoxy board (20✕30✕1.6mm)
For PNP, the minus sign is omitted.
0.001
0.1
2
3
PC -- Ta
250
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
Collector Dissipation, PC -- mW
7
5
200
150
100
50
0
5 7 100
IT04207
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT04208
No.7198-4/7
2SA1179N / 2SC2812N
Embossed Taping Specification
2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E
No.7198-5/7
2SA1179N / 2SC2812N
Outline Drawing
Land Pattern Example
2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.0
0.8
0.95
0.95
No.7198-6/7
2SA1179N / 2SC2812N
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PS No.7198-7/7