Download QW-BB029 RB751V-40 RevB

SMD Schottky Barrier Diodes
RB751V-40
Io = 30 mA
V R = 30 Volts
RoHS Device
SOD-323
Features
0.108 (2.75)
- Low current rectifier.
0.100 (2.55)
- Low voltage, low inductance.
0.014 (0.35)
0.010 (0.25)
- For power supply.
0.055 (1.40)
0.047 (1.20)
0.071 (1.80)
0.063 (1.60)
Mechanical data
0.035 (0.90)
0.031 (0.80)
- Case: SOD-323, Standard package,
molded plastic.
0.006 (0.150)
0.003 (0.080)
0.039 (1.00)
MAX.
- Terminals: Solderable per MIL-STD-750,
method 2026
0.004 (0.10)
0.000 (0.00)
0.019 (0.475)REF
- Mounting position: Any
Dimensions in inches and (millimeter)
- Weight: 0.01 grams(approx.)
Circuit diagram
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Limit
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
30
V
Mean rectifying current
IO
30
mA
IFSM
0.2
A
PD
200
mW
RΘJA
500
°C/W
Junction temperature range
TJ
-40 ~ +125
°C
Storage temperature range
TSTG
-55 ~ +150
°C
Parameter
Non-repetitive peak forward surge current
Conditions
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
Power dissipation
Thermal resistance
Junction to ambient
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF=1mA
VF
0.37
V
Reverse current
VR=30V
IR
0.50
µA
Capacitance between terminals
VR=1V, f=1MHz
CT
2
pF
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BB029
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diodes
RATING AND CHARACTERISTIC CURVES (RB751V-40)
Fig.1 - Power Derating Curve
Fig.2 - Capacitance Characteristics
Capacitance Between Terminals, CT (pF)
Power Dissipation, PD (mW)
250
200
150
100
50
0
0
25
50
75
100
4
TJ=25°C
f=1MHz
3
2
1
0
125
0
Ambient Temperature, TA (°C)
15
20
Reverse Voltage, VR (V)
Fig.3 - Forward Characteristics
Fig.4 - Reverse Characteristics
100
100
10
Reverse Current, IR (μA)
Forward Current, IF (mA)
10
5
TJ=100°C
TJ=25°C
1.0
0.1
10
TJ=100°C
1.0
TJ=25°C
0.1
0.01
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
5
Forward Voltage, VF (V)
10
15
20
25
30
35
40
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BB029
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diodes
Reel Taping Specification
12
o
0
D2
D1 D
W1
SOD-323
SOD-323
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.48 ± 0.05
3.30 ± 0.05
1.25 ± 0.05
1.50 + 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.058 ± 0.002
0.130 ± 0.002
0.049 ± 0.002
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BB029
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diodes
Marking Code
Part Number
Marking Code
RB751V-40
5
5
▎= The marking bar indicates the cathode.
Suggested PAD Layout
A
SOD-323
SIZE
(mm)
(inch)
A
2.15
0.085
B
0.70
0.028
C
0.70
0.028
C
B
Note:
1.General tolerance: ±0.05mm.
2.The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
SOD-323
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
QW-BB029
Page 4
Comchip Technology CO., LTD.