Download IKZ75N65EH5 - Infineon Technologies

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKZ75N65EH5
650VDuoPackIGBTanddiode
Highspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKZ75N65EH5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedH5technologyoffering
•UltralowlossswitchingthankstoKelvinemitterpinin
combinationwithTRENCHSTOPTM5
•Best-in-classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
•Solarstringinverters
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
IKZ75N65EH5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
75A
1.65V
175°C
K75EEH5
PG-TO247-4
2
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC
90.0
75.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
300.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
300.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IF
95.0
85.0
A
Diodepulsedcurrent,tplimitedbyTvjmax1)
IFpuls
300.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
395.0
197.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.38
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
0.46
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
1)
Defined by design. Not subject to production test.
4
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
-
1.65
1.82
1.90
2.10
-
-
1.35
1.33
1.30
1.70
-
3.2
4.0
4.8
V
75.0
3300.0
-
µA
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
Collector-emitter saturation voltage VCEsat
V
V
Diode forward voltage
VF
VGE=0V,IF=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
Gate-emitter threshold voltage
VGE(th)
IC=0.75mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=75.0A
-
104.0
-
S
V
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
4300
-
-
130
-
-
16
-
-
166.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=75.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
26
-
ns
-
11
-
ns
-
347
-
ns
-
15
-
ns
-
0.68
-
mJ
-
0.43
-
mJ
-
1.11
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
Tvj=25°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=18.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=37.5A,
diF/dt=1500A/µs
dirr/dt
-
58
-
ns
-
1.02
-
µC
-
29.0
-
A
-
-2800
-
A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
24
-
ns
-
13
-
ns
-
400
-
ns
-
15
-
ns
-
1.10
-
mJ
-
0.48
-
mJ
-
1.58
-
mJ
-
91
-
ns
-
2.58
-
µC
-
42.0
-
A
-
-1845
-
A/µs
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=18.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=150°C,
VR=400V,
IF=37.5A,
diF/dt=1500A/µs
dirr/dt
6
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
400
350
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
100
10
1
300
250
200
150
100
50
not for linear use
0.1
1
10
100
0
1000
25
50
VCE,COLLECTOR-EMITTERVOLTAGE[V]
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,
ICmaxdefinedbydesign-notsubjectto
production test)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
100
300
90
270
18V
80
240
15V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
VGE = 19V
70
60
50
40
30
14V
210
180
7V
30
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
5V
90
10
50
8V
120
60
25
9V
150
20
0
11V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
7
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
300
300
270
17V
270
240
15V
240
11V
210
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
VGE = 19V
9V
180
8V
150
120
90
210
180
150
120
90
60
60
30
30
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
Tvj = 25°C
Tvj = 175°C
3
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
6
7
8
9
10
1000
IC = 20A
IC = 37.5A
IC = 75A
2.00
1.75
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
5
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.25
1.50
1.25
1.00
100
10
0.75
0.50
4
VGE,GATE-EMITTERVOLTAGE[V]
td(off)
tf
td(on)
tr
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
8
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
100
10
td(off)
tf
td(on)
tr
1
0
10
20
30
40
1
50
25
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=37.5A,dynamictestcircuitin
Figure E)
100
125
150
175
9
typ.
min.
max.
5.5
Eoff
Eon
Ets
8
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
7
6
5
4
3
2
1
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
25
50
75
100
125
0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.75mA)
9
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=10Ω,RG(off)=18Ω,
dynamic test circuit in Figure E)
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
3.5
1.8
Eoff
Eon
Ets
1.6
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
20
30
40
0.0
50
25
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=37.5A,dynamictestcircuitin
Figure E)
125
150
175
VCE = 130V
VCE = 520V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
100
16
Eoff
Eon
Ets
1.25
1.00
0.75
0.50
0.25
0.00
200
75
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
1.75
1.50
50
Tvj,JUNCTIONTEMPERATURE[°C]
12
10
8
6
4
2
250
300
350
0
400
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=37.5A,RG(on)=10Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
0
20
40
60
80
100 120 140 160 180
QG,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=75A)
10
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
C,CAPACITANCE[pF]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Cies
Coes
Cres
1E+4
1000
100
10
0
5
10
15
20
25
D = 0.5
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]:
2.8E-5
2.3E-4
2.3E-3
0.013145 0.113481 1.869237
0.001
1E-6
30
0.2
1E-5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
100
90
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
110
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
80
70
60
50
40
30
20
10
i:
1
2
3
4
5
6
7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]:
1.0E-5 3.0E-5
2.2E-4
2.2E-3
0.01247 0.10291 1.85641
0.001
1E-6
1E-5
1E-4
0.001
0.01
0
1000
0.1
tp,PULSEWIDTH[s]
1500
2000
2500
3000
3500
4000
4500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
11
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
3.5
100
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
90
3.0
Irr,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
2.5
2.0
1.5
1.0
80
70
60
50
40
30
20
0.5
10
0.0
1000
1500
2000
2500
3000
3500
4000
0
1000
4500
1500
2000
2500
3000
3500
4000
diF/dt,DIODECURRENTSLOPE[A/µs]
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
-1
300
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
-2
240
-3
-4
-5
-6
-7
210
180
150
120
90
-8
60
-9
30
-10
1000
Tvj = 25°C
Tvj = 175°C
270
IF,FORWARDCURRENT[A]
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/ns]
0
4500
1500
2000
2500
3000
3500
4000
4500
diF/dt,DIODECURRENTSLOPE[A/µs]
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 24. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
12
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
1.75
IF = 20A
IF = 37.5A
IF = 75A
VF,FORWARDVOLTAGE[V]
1.50
1.25
1.00
0.75
0.50
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
13
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
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3+5,-3.-5,/3)41,
166+3.43
72 27 !
531161,
Rev.2.1,2014-10-31
IKZ75N65EH5
Highspeedseriesfifthgeneration
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
parasitic
relief
on
=
VCE x IC x dt
2% VCE
t3
t2
t3
t4
t
15
Rev.2.1,2014-10-31
IKZ75N65EH5
High speed series fifth generation
Revision History
IKZ75N65EH5
Revision: 2014-10-31, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-10-17
Preliminary data sheet
2.1
2014-10-31
Final data sheet
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© 2014 Infineon Technologies AG
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16
Rev. 2.1, 2014-10-31