Download E. Verbitskaya et al., 7 RD50 Workshop, CERN

Results on Technotest sub-project:
long term annealing of MCZ n-type Si detectors
irradiated by 24 GeV/c protons
E. Verbitskaya, V. Eremin, I. Ilyashenko
Ioffe Physico-Technical Institute of Russian Academy of Sciences
St. Petersburg, Russia
Z. Li
Brookhaven National Laboratory, Upton, NY, USA
J. Haarkoonen, E. Tuovinen, P. Luukka
Helsinki Institute of Physics, CERN/PH, Geneva, Switzerland
Chris Parkes
Glasgow University
7 RD50 Collaboration Workshop
CERN, Geneva, Nov 14-16, 2005
1
Technotest
Goal of the project:
Finding correlations and comparison of radiation hardness
with respect to:
Type of Si
Design + processing
radiation
characteristics of heavily
irradiated detectors
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
2
Technotest
Participants
Detector processing:
♦ Ioffe Physico-Technical Institute (PTI)
+ Research Institute of Material Science and Technology (RIMST)
♦ BNL
♦ Helsinki Institute of Physics (HIP)
Irradiation:
♦ CERN (protons 24 GeV/c)
♦ Iosef Stefan Institute, Ljubljana (neutrons 1 MeV)
Evaluation
♦ Ioffe Physico-Technical Institute
♦ BNL
♦ HIP
♦ Iosef Stefan Institute
♦ Glasgow University
♦ ITEP, Moscow
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
3
Status of the work
Experiments carried out in 2004 (pres. 5 RD50 Workshop, Florence)
 detectors processed at three institutions
 irradiated by 1 MeV neutrons, Fn = 11010- 51015 cm-2
 studies of I-V, TCT
Current study in 2005
Goals:
 SCSI in detectors from MCZ Si,
 Influence of long term annealing on Vfd and Neff
 detectors processed from MCZ and FZ n-type Si
 irradiated by 24 GeV/c protons, Fp = 11014 and 11015 cm-2
 annealing at 80°C
Our acknowledgement to Maurice Glaser for irradiation by protons
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
4
Manufacturing procedure
Oxidation
p+
n+
Annealing
Al sintering
PTI
1100C/6h
50 keV/ 3e14 cm-2
80 keV/9e14 cm-2
700C/40min
430C/7min
BNL
1100C/6h
45 keV/2e14cm-2
80 keV/6e14cm-2
700C/30min
430C/5min
HIP
done after implantation
20 keV/1e15cm-2
70 keV/1e15cm-2
1100/4h
370C/40min (no TD)
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
5
Experimental samples
Types of n-Si
11014 cm-2
FZ Si
MCZ Si
PTI-Cz-d3 PTI-FZ-b3
BNL-101
HIP-21
11015 cm-2
FZ Si
MCZ Si
PTI-Cz-e4
PTI-FZ-c4
BNL-114
HIP-62
Resistivity, kW·cm
n-Si FZ: 4-6
n-Si MCZ: 1
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
6
Experimental
 annealings: 80C, 7 steps with variable time,
accumulated annealing time 10-1075 min (~18 h)
 TCT using red laser pulse generation of free carriers,
p+ side
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
7
Current pulse response, MCZ n-Si, Fp = 11014 cm-2
2.5E-04
2.5E-04
protons 1e14 cm-2
PTI_CZ_d3
p+ side
2.0E-04
96 V
145 V
1.5E-04
current (A)
current (A)
2.0E-04
195 V
293 V
1.0E-04
343 V
395 V
5.0E-05
47 V
protons 1e14 cm-2
HIP_21
p+ side
47 V
96 V
148 V
1.5E-04
195 V
293 V
1.0E-04
343 V
393 V
5.0E-05
492 V
492 V
0.0E+00
0.0E+00
0
5
10
15
20
0
5
10
15
20
time (ns)
time (ns)
2.5E-04
protons 1e14 cm-2
BNL_101
p+ side
current (A)
2.0E-04
Before annealing:
48 V
98 V
SC positive!
148 V
1.5E-04
198 V
297 V
1.0E-04
347 V
397 V
5.0E-05
496 V
0.0E+00
0
5
10 (ns)
time
15
20
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
8
Q vs. V and tcoll , MCZ n-Si, Fp = 11014 cm-2
Q normalized to maximal Q_total
# HIP_21, Fp = 1e14 cm-2, before anneal
1.2
1
1
0.8
Q normalized
Q normalized
# PTI_CZ_d3, Fp = 1e14 cm-2, before anneal
1.2
Q total
Q(20 ns)
0.6
Q(10 ns)
0.4
0.8
Q total
0.6
Q (20 ns)
Q (10 ns)
0.4
0.2
0.2
0
0
100
200
300
V (Volt)
400
500
600
0
0
100
200
300
400
500
600
V (Volt)
# BNL_101, Fp = 1e14 cm-2, before anneal
1.2
Q becomes saturated  Vfd
Q normalized
1
0.8
Q(10 ns)/Q_total  0.9
Q total
0.6
Q(20 ns)
Q(10 ns)
0.4
0.2
0
0
100
200
300
V (Volt)
400
500
600
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
9
Current pulse response, Fp = 11014 cm-2
comparison of MCZ and FZ n-Si (PTI)
2.5E-04
2.5E-04
protons 1e14 cm-2
PTI_CZ_d3
p+ side
2.0E-04
protons 1e14 cm-2
PTI_FZ_b3
p+ side
47 V
2.0E-04
96 V
44 V
93 V
143 V
1.5E-04
SC +
current (A)
current (A)
145 V
195 V
293 V
1.0E-04
1.5E-04
192 V
SC -
291 V
341 V
1.0E-04
390 V
343 V
490 V
395 V
5.0E-05
5.0E-05
492 V
0.0E+00
0.0E+00
0
5
10
15
20
time (ns)
5
10
time (ns)
15
20
Q normalized total, Fp = 1e14 cm-2,
before anneal
1.2
 SCSI in FZ Si
1
Q normalized
0
 no SCSI in MCZ Si
0.8
PTI_cz-d3
BNL_101
HIP_21
PTI_FZ_b3
0.6
0.4
0.2
0
0
100
200
300
V (Volt)
400
500
600
E. Verbitskaya et al., 7 RD50 Workshop,
CERN, Geneva, Nov 14-16, 2005
10
Long term annealing, MCZ n-Si, Fp = 11014 cm-2
80C, total tann~18 h
SC +
SC 7.0E-05
7.0E-05
25V
Proton 1e14
Pti_cz_d3
Annealing 1075 min
Laser to p+ side
6.0E-05
5.0E-05
74V
5.0E-05
99V
current (A)
current (A)
149V
173V
3.0E-05
248V
497V
2.0E-05
49V
74V
99V
124V
4.0E-05
25V
Proton 1e14
Bnl_101
Annealing 1075 min
Laser to p+ side
6.0E-05
49V
4.0E-05
124V
149V
3.0E-05
174V
249V
2.0E-05
498V
1.0E-05
1.0E-05
0.0E+00
0.0E+00
0
5
10
15
-1.0E-05
20
25
30
35
40
0
5
10
15
20
25
30
35
40
-1.0E-05
time (ns)
time (ns)
7.0E-05
5.0E-05
current (A)
24V
Proton 1e14
Hip_21
Annealing 1075 min
Laser to p+ side
6.0E-05
49V
74V
99V
124V
4.0E-05
149V
174V
3.0E-05
248V
2.0E-05
497V
1.0E-05
0.0E+00
0
-1.0E-05
5
10
15
20
time (ns)
25
30
35
40
E. Verbitskaya et al., 7 RD50 Workshop,
CERN, Geneva, Nov 14-16, 2005
11
Vfd and Neff vs. annealing time, MCZ Si, Fp = 11014 cm-2
Vfd vs. annealing time
250
3.0E+12
200
PTI-CZ-d3
HIP-21
BNL_101
150
100
Neff (cm-3)
Vfd (Volt)
Neff vs. annealing time
3.5E+12
50
2.5E+12
PTI-CZ-d3
2.0E+12
HIP-21
BNL-101
1.5E+12
1.0E+12
5.0E+11
0.0E+00
0
-5.0E+11
-50
-1.0E+12
0
200
400
600
800
annealing time (min)
Vfd  (25-30) V
1000
1200
0
200
400
600
800
1000
annealing time (min)
Negative charge is accumulated
Neff  5·1011 cm-3
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
12
1200
Neff vs. annealing time, MCZ Si, Fp = 11014 cm-2
Neff vs. annealing time
3.5E+12
PTI-CZ-d3
HIP-62
BNL-101
PTI-CZ-d3 fit
HIP-62 fit
BNL-101 fit
3.0E+12
Neff (cm-3)
2.5E+12
2.0E+12
1.5E+12
Neff
1.0E+12
5.0E+11
0.0E+00
-5.0E+11
0
200
400
600
800
1000
1200
-1.0E+12
annealing time (min)
Detector #
Neff0 (cm-3)
g1 (cm-1)
1 (min)
g1 (cm-1)
2 (min)
HIP-21
2.81012
0.01
30
0.015
400
PTI-CZ-d3
2.81012
0.01
30
0.015
400
Fit: double exponential model
 Neff 0  g1F1  exp t /  1   g 2 F1  exp t /  2 
Fast and slow components of reverse
annealing
Influence of technology:
difference in the amplitude
of fast component –
acceptor introduction rate g1 differs in a factor of 2
BNL-101
2.81012
0.0185
30
0.015
400
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
13
Current pulse response, MCZ n-Si, Fp = 11015 cm-2
3.0E-04
Double Peak for all detectors
at V > 200 V
1st peak dominates (H1/H2>1)
36 V
protons 1e15cm-2
PTI_CZ-e4
p+ side
current (A)
2.5E-04
76 V
120 V
2.0E-04
205 V
1.5E-04
Before
annealing
246 V
3.0E-04
303 V
1.0E-04
5.0E-05
0.0E+00
0
5
10
15
20
25
30
time (ns)
current (A)
350 V
42 V
protons 1e15cm-2
BNL_114
p+ side
2.5E-04
322 V
88 V
134 V
2.0E-04
205 V
250 V
1.5E-04
294 V
357 V
1.0E-04
395 V
5.0E-05
3.0E-04
current (A)
40 V
protons 1e15cm-2
HIP_62
p+ side
2.5E-04
417 V
0.0E+00
0
75 V
5
10
15
20
25
30
time (ns)
2.0E-04
120 V
205 V
1.5E-04
245 V
insignificant difference in H1/H2
303 V
1.0E-04
322 V
5.0E-05
350 V
0.0E+00
0
5
10
15
time (ns)
20
25
30
E. Verbitskaya et al., 7 RD50 Workshop,
CERN, Geneva, Nov 14-16, 2005
14
Double Peak E(x) distribution and DP response
E. Verbitskaya et al., “Operation of heavily irradiated silicon detectors in non-depletion mode”,
Pres. 5 RESBDD, Florence Oct. 2004, NIM A (in press)
 E(x) is non-uniform in heavily irradiated detectors (e&h trapping to DLs)
 Three regions of heavily irradiated detector structure are considered
 Reverse current flow induces the electric field Ebinto the neutral base
p+
Eb
B
W1 W
1
SCRs:
1: Neff1 positive
2: Neff2 negative
2
B
current
hn
2
E1 1
n+
E2
W2
eff
tim e
b
Transient current:
it  
Qo E
d
e
t /  eff
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
15
Q vs. V, MCZ n-Si, Fp =
11015
# BNL_114, Fp = 1e15 cm-2, before anneal
1.2
1
1
0.8
0.8
Q normalized
Q normilized
Q normalized total, Fp = 1e15 cm-2, before anneal
1.2
0.6
PTI_cz-e4
BNL_114
0.4
Before
annealing
cm-2
0.6
Q total
0.4
Q(20 ns)
Q(10 ns)
HIP_62
0.2
0.2
0
0
0
0
100
200
300
400
500
V (Volt)
200
300
400
500
V (Volt)
Q normalized, t_ col = 10 ns, Fp = 1e15 cm-2,
before anneal
1.2
 no saturation of Q
 Q(10 ns)/Q_total  0.85-0.9
1
Q normalized
100
0.8
0.6
PTI_cz_e4
BNL_114
0.4
HIP_62
0.2
0
0
100
200
V (Volt)
300
400
500
E. Verbitskaya et al., 7 RD50 Workshop,
CERN, Geneva, Nov 14-16, 2005
16
Long term annealing, MCZ Si, Fp = 11015 cm-2
PTI-CZ-e4
Tann = 80C, 7 steps
Before anneal
2: 35 min (total tann)
3.0E-05
Series1
2.5E-05
Series2
Series2
2.0E-05
Series5
Series6
1.0E-05
5.0E-06
Series6
0
5
10
15
20
Series10
Series10
Series11
Series11
Series12
5.0E-06
Ser
Series12 5.0E-06
Ser
Series13
Series13
Ser
Series14
Series14
1.0E-05
0
Series16
5
10
15
20
Ser
Ser
1.0E-05
Ser
Ser
Series150.0E+00
0
Series16
5
10
15
20
Series17
-5.0E-06
time, ns
time, ns
Series19
Series1
Series1
1.0E-04
Series2
Series2 9.0E-05
8.0E-05
Series3
Series3
Series4
Series4
Proton, 1e15 cm-2
Pti_cz_e4
6 anneal, 6 h
t_sum = 715 min
Series6
6.0E-05
Series7
Ser
Ser
Serie
Serie
8.0E-05
Series6
Series7
Serie
Proton, 1e15 cm-2
Pti_cz_e4
7 anneal, 6 h
t_sum = 1075 min
Series5 7.0E-05
current (A)
8.0E-05
Ser
7: 18 h
9.0E-05
Series5
Ser
Ser
Series18
6: 12 h
current (A)
current (A)
Ser
Series9
5: 6 h
6.0E-05
Ser
Series9
Series19
7.0E-05
Ser
Series8
Series18
Proton, 1e15 cm-2
Pti_cz_e4
5 anneal, 180 min,
t_sum = 355 min
Ser
Series8
Series17
-5.0E-06
time, ns
1.5E-05
Series7
Series15
-5.0E-06
proton, 1e15 cm-2
PTI-CZ-e4
3 anneal, 50 min,
t_sum = 85 min
2.0E-05
Series5
0.0E+00
0.0E+00
Ser
Ser
Series4
current, A
Series7
1.5E-05
1.5E-05
Ser
2.5E-05
Series3
proton, 1e15 cm-2
PTI-CZ-e4
2 anneal, 25 min,
t_sum = 35 min
Series4
current, A
current, A
2.0E-05
Series1
Series3
Proton, 1e15 cm-2
Pti_cz_e4
p+ side
before anneal
2.5E-05
3: ~1.5 h
6.0E-05
Serie
Serie
Serie
Serie
5.0E-05
Series8
Series8 5.0E-05
Serie
4.0E-05
Series9
Series9
Serie
3.0E-05
2.0E-05
1.0E-05
0
5
10
time (ns)
15
20
Series10
Serie
Series113.0E-05
Series12
2.0E-05
Serie
Series12
Series13
Series132.0E-05
Serie
Series14
Series141.0E-05
Series16
0
5
10
Series17
-2.0E-05
Series18
Series19
V = 40-440 V
4.0E-05
Series11
0.0E+00
Series15
0.0E+00
-1.0E-05
4.0E-05
Series10
15
20
Serie
Serie
0.0E+00
Series16
Series17
time (ns)
Serie
Series15
-1.0E-05
2
7
Series18
Series19
12
17
time (ns)
Serie
Serie
Serie
Serie
H1/H2 changes under annealing
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
22
17
Evolution of Double Peak response under annealing,
MCZ Si, Fp = 11015 cm-2
Normalized response
Annealing of DP response
current normalized
t_ann (min):
PTI_cz_e4
Fp = 1e15 cm-2
V = 360 V
1
0.8
Annealing of DP response
1.2
0
10
35
85
0.6
175
355
0.4
715
0.2
t_ann (min):
BNL-114
Fp = 1e15 cm-2
V = 420 V
1
current normalized
1.2
0.8
0
10
35
85
0.6
175
355
0.4
715
0.2
1075
1075
0
0
0
5
10
time (ns)
15
20
0
5
10
time (ns)
15
20
Stages of DP response shape changes:
 increase of H1
 increase of H2  shape close to single peak (E(x)  linear)
 reduction of H2 and increase of pulse width
eff does not change under annealing
18
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
MCZ Si, Fp = 11015 cm-2
different detectors after final step, total tann = 18 h
H1/H21 with V
H1/H2<1 with V
1.0E-04
1.0E-04
8.0E-05
6.0E-05
45V
88V
Proton 1e15
Bnl_114
Annealing 1075 min
Laser to p+side
8.0E-05
135V
205V
275V
298V
321V
4.0E-05
367V
404V
2.0E-05
93V
141V
213V
6.0E-05
current (A)
current (A)
43V
Proton 1e15
Pti_cz_e4
Annealing 1075 min
Laser to p+ side
440V
285V
309V
333V
4.0E-05
357V
404V
2.0E-05
0.0E+00
450V
0.0E+00
0
5
10
-2.0E-05
15
20
25
30
0
5
10
15
20
25
30
-2.0E-05
time (ns)
time (ns)
1.0E-04
40V
Proton 1e15
Hip_62
Annealing 1075 min
Laser to p+ side
8.0E-05
86V
133V
203V
current (A)
6.0E-05
273V
296V
318V
4.0E-05
364V
402V
435V
2.0E-05
0.0E+00
0
-2.0E-05
5
10
15
time (ns)
20
25
30
E. Verbitskaya et al., 7 RD50 Workshop,
CERN, Geneva, Nov 14-16, 2005
19
Q vs. V and tcoll , MCZ n-Si, Fp = 11015 cm-2
Before anneal
annealing time 18 h
# BNL-114, Fp = 1e15 cm-2, anneal 1075 min
1
0.8
0.8
Q normalized
Q normalized
# BNL_114, Fp = 1e15 cm-2, before anneal
1
0.6
Q total
Q(20 ns)
0.4
H1 ↑
0.6
0.4
Q(10 ns)
Q total
Q(20 ns)
0.2
0.2
Q(10 ns)
0
0
0
100
200
V (Volt)
300
400
0
500
200
300
400
500
Q normalized, t_ col = 10 ns, Fp = 1e15 cm-2,
anneal 1075 min
1
0.8
0.8
Q normalized
1
0.6
PTI_cz_e4
0.4
100
V (Volt)
Q normalized, t_ col = 10 ns, Fp = 1e15 cm-2,
before anneal
Q normalized
BNL-114
H2 ↑
BNL_114
All detectors
PTI_cz_e4
BNL_114
0.6
HIP_62
no Q
saturation
0.4
HIP_62
0.2
0.2
0
0
0
100
200
300
V (Volt)
400
500
0
100
200
300
400
500
V (Volt)
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
20
Influence of technology, Fp = 11015 cm-2
All detectors after final annealing
and at the same V = 420 V
DP response normalized, V = 420 V
"Vfd " vs. annealing time, Fp = 1e15 cm-2
1.2
400
PTI-CZ-e4
BNL-114
300
HIP-62
0.8
Vfd (Volt)
current normalized
1
0.6
0.4
200
PTI-CZ-e4
BNL-114
HIP-62
100
0.2
0
0
2
7
12
time (ns)
17
22
0
200
400
600
800
annealing time (min)
1000
1200
Influence of technology:
different H1/H2ratio  different E(x)
E(x) reconstruction is in progress
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
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Conclusions
Detectors from n-type MCZ silicon irradiated by 24 GeV/c protons
 Fp = 11014 cm-2:
• All as-irradiated detectors are not inverted (FZ n-Si is beyond SCSI)
• Reverse annealing: the rate of acceptor introduction depends on
manufacturing
 Fp = 11015 cm-2
• DP current pulse shape dominates
• the electric field is distributed over the total bulk starting from V  200 V
that is advantageous for fast and effective charge collection
• the ratio H1/H2 changes under long term annealing
• the ratio H1/H2 is affected by technology
At Fp = 11015 cm-2 the influence of technology is still observed!
 Future task of sub-project:
the links between the observed peculiarities and manufacturing and
optimization for reaching higher radiation hardness
E. Verbitskaya et al., 7 RD50 Workshop, CERN, Geneva, Nov 14-16, 2005
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