Download low noise general purpose audio amplifiers

BC477
BC478-BC479
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC477, BC478 and BC479 are silicon planar
epitaxial PNP transistors in TO-18 metal case. The
BC477 is a high voltage type designed for use in
audio amplifiers or driver stages, and in the signal
processing circuits of TV sets. The BC478 and
BC479 are respectively low noise andvery low noise
types, designed for general preamplifier or amplifier
applications.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BC477
BC478
BC479
Unit
V CES
Collector-emitter Voltage (V BE = 0)
– 90
– 40
– 40
V
V CEO
Collector-emitter Voltage (I B = 0)
– 80
– 40
– 40
V
V EBO
Emitter-base Voltage (I C = 0)
IC
Collector Current
–6
V
– 150
mA
0.36
1.2
W
W
Pt o t
Total Power Dissipation at T amb ≤ 25 °C
at T c as e ≤ 25 °C
T st g
Storage Temperature
– 55 to 200
°C
Tj
Junction Temperature
200
°C
January 1989
1/7
BC477-BC478-BC479
THERMAL DATA
R t h j- cas e
R t h j -amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Ma x
Ma x
°C/W
°C/W
146
485
ELECTRICAL CHARACTERISTICS(T a mb = 25 °C unless otherwise specified )
Symbol
I CE S
I E BO
Parameter
Collector Cutoff
Current (V BE = 0)
Test Conditions
V EB = – 4 V
Collector-emitter
Breakdown Voltage
(V BE = 0)
I C = – 10 µA
Collector-emitter
Breakdown Voltage
(I B = 0)
I C = – 5 mA
V (B R)E BO
Emitter-base
Breakdown Voltage
(I C = 0)
I E = – 10 µA
V CE( sat )*
Collector-emitter
Saturation Voltage
IC
IB
IC
IB
Base-emitter Voltage
I C = 2 mA
Base-emitter
Saturation Voltage
IC
IB
IC
IB
DC Current Gain
I C = – 10 µA
V (B R)CEO
VB E *
V BE( sat )*
h F E*
=
=
=
=
=
=
=
=
–
–
–
–
–
–
–
–
Small Signal
Current Gain
I C = – 2 mA
f = 1 kHz
I C = – 10 mA
f = 20 MHz
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
2/7
Unit
– 10
– 10
nA
µA
– 10
– 10
nA
µA
– 10
nA
– 90
– 40
– 40
V
V
V
for BC477
for BC478
for BC479
– 80
– 40
– 40
V
V
V
–6
V
– 0.1
– 0.25
V
– 0.65
– 0.75
V
– 0.75
– 0.9
V
– 0.3
V CE = – 5 V
– 0.55
10 mA
0.5 mA
100 mA
5 mA
I C = – 10 mA
Max.
for BC477
for BC478
for BC479
10 mA
0.5 mA
100 mA
5 mA
I C = – 2 mA
hfe
Typ.
for BC107
V CE = – 70 V
V CE = – 70 V
T amb = 125 °C
for BC479-BC478
V CE = – 30 V
V CE = – 30 V
T amb = 125 °C
Emitter-cutoff
Current (I C = 0)
V (B R)CES
Min.
V
– 0.9
V CE = – 5 V
for BC477
for BC478
for BC479
V CE = – 5 V
for BC477
for BC478
for BC 479
V CE = – 5 V
for BC477
for BC478
for BC479
30
50
100
V
115
195
290
250
450
110
110
200
160
270
350
V CE = – 5 V
for BC477
for BC478
for BC479
V CE = –5 V
125
125
220
260
500
7.5
BC477-BC478-BC479
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Typ.
Max.
Unit
C CBO
Collector-base
Capacitance
IE = 0
V CB = – 5 V
4
6
pF
C EBO
Emitter-base
Capacitance
IC = 0
V EB = – 0.5 V
11
15
pF
NF
Noise Figure
I C = – 20µA
V CE = – 5 V
R g = 10kΩ
f = 10 Hz to 10 kHz
B = 15.7 kHz
for BC479
0.8
3.5
dB
1.5
1
4
dB
dB
0.5
2.5
dB
2
1.2
0.8
10
6
4
dB
dB
dB
NF
Parameter
Noise Figure
Test Conditions
Min.
V CE = – 5 V
I C = – 200 µA
R g = 2 kΩ
f = 10 Hz to 10 kHz
B = 15.7 kHz
for BC478
for BC479
I C = – 20µA
V CE = – 5 V
R g = 10 kΩ
f = 1 kHz
B = 200 Hz
for BC479
I C = – 200 µA
V CE = – 5 V
R g = 2 kΩ
f = 1 kHz
B = 200 Hz
for BC477
for BC478
for BC479
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector-emitter Saturation Voltage.
Collector Cutoff Current.
3/7
BC477-BC478-BC479
Collector-base Capacitance.
Transition Frequency.
Noise Figure (for BC 477 only).
Noise Figure (for BC 478 only).
Noise Figure (for BC 479 only).
Noise Figure (for BC 479 only).
4/7
BC477-BC478-BC479
Noise Figure vs. Frequency (for BC 479 only).
Power Rating Chart.
5/7
BC477-BC478-BC479
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
6/7
BC477-BC478-BC479
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
7/7