REV.1 dell`APRILE 2013 Natural Circulation High
... A simple capacitor can be made by inserting dielectric material (a substance which has little or no electrical conductivity, for example air), between two parallel plates of conducting material (Figure 3.16.8). The situation is somewhat different in the case of plates immersed in a conductive liquid ...
... A simple capacitor can be made by inserting dielectric material (a substance which has little or no electrical conductivity, for example air), between two parallel plates of conducting material (Figure 3.16.8). The situation is somewhat different in the case of plates immersed in a conductive liquid ...
Appl. Phys. Lett. 92, 133512 (2008)
... consequently determined by the trap and detrap rates of the trap states. Accordingly, some conventional C-V methods for the usual MOSFETs can extract the trap densities by evaluating the frequency dependence.21,22 The other C-V methods are also based on these structure and boundary condition and for ...
... consequently determined by the trap and detrap rates of the trap states. Accordingly, some conventional C-V methods for the usual MOSFETs can extract the trap densities by evaluating the frequency dependence.21,22 The other C-V methods are also based on these structure and boundary condition and for ...
DNLS350E Features Mechanical Data
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
STGP19NC60S
... maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ...
... maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ...
SG6742WMR Highly Integrated Green-Mode PWM Controller
... To minimize standby power consumption, a proprietary Green-Mode function provides off-time modulation that linearly decreases the switching frequency at light-load conditions. To avoid acoustic-noise problems, the minimum PWM frequency is set above 22KHz. Green Mode enables the power supply to meet ...
... To minimize standby power consumption, a proprietary Green-Mode function provides off-time modulation that linearly decreases the switching frequency at light-load conditions. To avoid acoustic-noise problems, the minimum PWM frequency is set above 22KHz. Green Mode enables the power supply to meet ...
University of Groningen Origin of the reduced fill factor and
... these devices, especially the unannealed ones, as compared to their fullerene counterparts is not clear. One of the main reasons for the relatively low efficiencies is the fact that the fill factor (FF) is less than 25 %, that is, about twice as low as for MDMO-PPV:PCBM devices. In earlier work on f ...
... these devices, especially the unannealed ones, as compared to their fullerene counterparts is not clear. One of the main reasons for the relatively low efficiencies is the fact that the fill factor (FF) is less than 25 %, that is, about twice as low as for MDMO-PPV:PCBM devices. In earlier work on f ...
PAM2805 Description Pin Assignments
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
Development of High Voltage Surge Limiting Resistor for
... to 20A @ 8.33ms and absorb the surge energy of 150J for 100ms. Due to conditional sparking between two consecutive rectifier stack, 0.7A current flows through stack, these causes the dip in the HV column voltage and system will trip within 100ms. The resistor has to withstand a surge voltage of 600k ...
... to 20A @ 8.33ms and absorb the surge energy of 150J for 100ms. Due to conditional sparking between two consecutive rectifier stack, 0.7A current flows through stack, these causes the dip in the HV column voltage and system will trip within 100ms. The resistor has to withstand a surge voltage of 600k ...
BD9763FVM
... Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended onl ...
... Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended onl ...
UC3851 数据资料 dataSheet 下载
... With a decreasing voltage, it generates a turn-off command at a lower level separated by a 200µA hysteresis current. 2. Drive Switch: Disables most of the chip to hold internal current consumption low, and Driver Bias OFF, until input voltage reaches start threshold. 3. Driver Bias: Supplies drive t ...
... With a decreasing voltage, it generates a turn-off command at a lower level separated by a 200µA hysteresis current. 2. Drive Switch: Disables most of the chip to hold internal current consumption low, and Driver Bias OFF, until input voltage reaches start threshold. 3. Driver Bias: Supplies drive t ...
www.BDTIC.com/FAIRCHILD 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor 2N7002V/V
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
Accurate Low-Resistance Measurements Start with Identifying
... becoming resistive) are two commonly measured parameters. Characterizing these parameters requires measuring very small resistances. Figure 7 shows a basic superconductor resistance measurement configuration. The voltage leads should be made of a material with a low Seebeck coefficient with respect ...
... becoming resistive) are two commonly measured parameters. Characterizing these parameters requires measuring very small resistances. Figure 7 shows a basic superconductor resistance measurement configuration. The voltage leads should be made of a material with a low Seebeck coefficient with respect ...
biasing
... in Fig. 28-10 (a) and then reverse the ohmmeter leads as shown in (b). For a good p-n junction made of silicon, the ratio RR/RF should be equal to or greater than 1000:1. Although not shown, the resistance measured between the collector and emitter should read high or infinite for both connectio ...
... in Fig. 28-10 (a) and then reverse the ohmmeter leads as shown in (b). For a good p-n junction made of silicon, the ratio RR/RF should be equal to or greater than 1000:1. Although not shown, the resistance measured between the collector and emitter should read high or infinite for both connectio ...
ADL5315 数据手册DataSheet 下载
... mirror operation. VSREF is maintained 1.0 V below VPOS over temperature and is independent of input current. When using SREF to set the input voltage, a capacitor should be placed between SREF and ground to filter noise from SREF as well as improve power supply rejection over frequency. A value of 2 ...
... mirror operation. VSREF is maintained 1.0 V below VPOS over temperature and is independent of input current. When using SREF to set the input voltage, a capacitor should be placed between SREF and ground to filter noise from SREF as well as improve power supply rejection over frequency. A value of 2 ...
AP1513
... current protect function and a short circuit protect function are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300KHz to 30KHz. Also, an internal compensation block is built in to minimum external component count. With the addition of an internal P-channel ...
... current protect function and a short circuit protect function are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300KHz to 30KHz. Also, an internal compensation block is built in to minimum external component count. With the addition of an internal P-channel ...
cdv/dt induced turn-on in synchronous buck regulators
... the voltage difference between Vds and Vth when Vds reaches the input voltage. In this case, equation (10) is equivalent to ...
... the voltage difference between Vds and Vth when Vds reaches the input voltage. In this case, equation (10) is equivalent to ...
Basic Circuit Elements
... Note that the current iX that the current-dependent current source depends on, is a current located somewhere in the same circuit that the source is located in. The coefficient 7.5 is an example, and could be any number. However, this number will be a dimensionless quantity for a current-dependent c ...
... Note that the current iX that the current-dependent current source depends on, is a current located somewhere in the same circuit that the source is located in. The coefficient 7.5 is an example, and could be any number. However, this number will be a dimensionless quantity for a current-dependent c ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.