Controlling the dimensionality of charge transport in organic thin-film transistors
... width and length and the last term gives the slope of the fitted line. The resulting mobility is µ = 2 · 10−4 cm2 V−1 s−1 . The situation was very different at higher gate voltages, |VG | > 1.0 V (see Fig. 3C and D). As compared to the former regime, a much higher output current, on-off ratio and a ...
... width and length and the last term gives the slope of the fitted line. The resulting mobility is µ = 2 · 10−4 cm2 V−1 s−1 . The situation was very different at higher gate voltages, |VG | > 1.0 V (see Fig. 3C and D). As compared to the former regime, a much higher output current, on-off ratio and a ...
LCD display
... Other measurements There are two other settings on the multimeter that can be used for testing transistors and diodes. These are not required for use as part of the STELR program, but may be of general use in other programs. ...
... Other measurements There are two other settings on the multimeter that can be used for testing transistors and diodes. These are not required for use as part of the STELR program, but may be of general use in other programs. ...
FSQ0565RS/RQ Green-Mode Fairchild Power Switch (FPS™) for Quasi-Resonant Operation -
... 2.1 Pulse-by-Pulse Current Limit: Because currentmode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (VFB*), as shown in Figure 24. Assuming that the 0.9mA current source flows only through the internal resistor (3R + R = 2.8k), the ca ...
... 2.1 Pulse-by-Pulse Current Limit: Because currentmode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (VFB*), as shown in Figure 24. Assuming that the 0.9mA current source flows only through the internal resistor (3R + R = 2.8k), the ca ...
Hybrid Organic/Inorganic Molecular Heterojunctions Based on
... where R0 is the total contact resistance (see Supporting Information), n is the tunneling barrier thickness (here, the number of CH2 groups in the alkyl chain), and β is the exponential decay factor which has been reported25,30 as ranging from 1.0 to 1.8 per CH2 group. By using eq 1, β was found to ...
... where R0 is the total contact resistance (see Supporting Information), n is the tunneling barrier thickness (here, the number of CH2 groups in the alkyl chain), and β is the exponential decay factor which has been reported25,30 as ranging from 1.0 to 1.8 per CH2 group. By using eq 1, β was found to ...
Secondary-side rectification for an LLC resonant converter featuring
... decreasing; the DVS voltage also drops but the RC formed by the parasitic capacitance of pin DVS (about 10 pF) and the sensing resistors introduces a time constant that slows down the sensed signal. During this phase the power MOSFET stray inductance does not contribute because there is no current f ...
... decreasing; the DVS voltage also drops but the RC formed by the parasitic capacitance of pin DVS (about 10 pF) and the sensing resistors introduces a time constant that slows down the sensed signal. During this phase the power MOSFET stray inductance does not contribute because there is no current f ...
AN347
... As the ESD protection devices are added between TMDS outputs of PI3HDMI201/301 and HDMI connector of an HDMI source device, the implementation of ESD protection device will affect HDMI compliance tests measured at HDMI connector. Per HDMI Compliance Test Specification, VOFF test is performed when fe ...
... As the ESD protection devices are added between TMDS outputs of PI3HDMI201/301 and HDMI connector of an HDMI source device, the implementation of ESD protection device will affect HDMI compliance tests measured at HDMI connector. Per HDMI Compliance Test Specification, VOFF test is performed when fe ...
AN00055 STARplug efficient low power supply
... The internal regulation voltage (Vreg_intern) is equal to the difference between the external regulation voltage and the internal voltage source (2.5 V) multiplied by 10. This internal regulation voltage is compared with the voltage of the oscillator. As soon as the oscillator voltage is lower than ...
... The internal regulation voltage (Vreg_intern) is equal to the difference between the external regulation voltage and the internal voltage source (2.5 V) multiplied by 10. This internal regulation voltage is compared with the voltage of the oscillator. As soon as the oscillator voltage is lower than ...
PDF：121KB
... of semiconductors, is illustrated by line (b) in the graph, where failure rate is shown to gradually diminish as a factor of time. In other words, a notable feature of semiconductor devices is that the longer a particular device has been used, the more stable it will be. Viewed from a different pers ...
... of semiconductors, is illustrated by line (b) in the graph, where failure rate is shown to gradually diminish as a factor of time. In other words, a notable feature of semiconductor devices is that the longer a particular device has been used, the more stable it will be. Viewed from a different pers ...
VISHAY IL256 datasheet
... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contain ...
... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contain ...
2N7002T Product Summary Features
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
PAM2863 Description Pin Assignments
... lowers overall efficiency. This capacitor has to supply the relatively high peak current to the coil and smooth the current ripple on the input supply. A minimum value of 10µF is acceptable if the input source is close to the device, but higher values will improve performance at lower input voltages ...
... lowers overall efficiency. This capacitor has to supply the relatively high peak current to the coil and smooth the current ripple on the input supply. A minimum value of 10µF is acceptable if the input source is close to the device, but higher values will improve performance at lower input voltages ...
4300 Series LaserSource User's Manual
... Unlike other laser diode drivers in its class, which use inexpensive 7-segment displays, the LaserSource takes advantage of its large VFD display to simultaneously show the set point, laser voltage, and photodiode read back. The user interface of the LaserSource is engineered to make using the instr ...
... Unlike other laser diode drivers in its class, which use inexpensive 7-segment displays, the LaserSource takes advantage of its large VFD display to simultaneously show the set point, laser voltage, and photodiode read back. The user interface of the LaserSource is engineered to make using the instr ...
Sensorless six-step BLDC commutation
... motor looks like three coils connected at the center in a WYE configuration, as shown in Figure 2. The center point, or neutral, of the WYE is not usually brought out of the motor. Although it is less common, the three coils may also be connected in a triangular DELTA configuration. For the analysis ...
... motor looks like three coils connected at the center in a WYE configuration, as shown in Figure 2. The center point, or neutral, of the WYE is not usually brought out of the motor. Although it is less common, the three coils may also be connected in a triangular DELTA configuration. For the analysis ...
SIGC156T120R2C IGBT Chip in NPT-technology
... E = Emitter pad G = Gate pad T = Test pad do not contact ...
... E = Emitter pad G = Gate pad T = Test pad do not contact ...
Understanding Arrester Discharge Voltage
... US market while Residual Voltage is used in most other locations around the world. A somewhat obsolete term that describes this characteristic in electrical terms is IR Drop which refers to the voltage across the arrester when a current I passes through the resistance of the arrester R. In both the ...
... US market while Residual Voltage is used in most other locations around the world. A somewhat obsolete term that describes this characteristic in electrical terms is IR Drop which refers to the voltage across the arrester when a current I passes through the resistance of the arrester R. In both the ...
Modeling of low voltage nanometer
... chosen (gate 1 and 2 material work functions are 4.3 eV and 5.0 eV respectively). In this case, the electrons are localized within gate 1, and the holes - within gate 2 (Fig 7). ...
... chosen (gate 1 and 2 material work functions are 4.3 eV and 5.0 eV respectively). In this case, the electrons are localized within gate 1, and the holes - within gate 2 (Fig 7). ...
PAM2312 Description Pin Assignments
... stability and transient response. To ensure the longest battery life in portable applications, the PAM2312 provides a power-saving Pulse- Skipping Modulation (PSM) mode to reduce quiescent current under light load operation to save power. The PAM2312 supports a range of input voltages from 2.5V to 5 ...
... stability and transient response. To ensure the longest battery life in portable applications, the PAM2312 provides a power-saving Pulse- Skipping Modulation (PSM) mode to reduce quiescent current under light load operation to save power. The PAM2312 supports a range of input voltages from 2.5V to 5 ...
BDTIC www.BDTIC.com/infineon Z V S P h a s e ... C F D 2 O p t i...
... suitable for resonant topologies due to their ease of use behavior, low RDS(on) and their integrated fast body diode. This fast body diode is an important feature to prevent failures in the used topology during short circuit, line cycle drop out or burst mode. (MOSFET A, B, C, D) (2) Resonant induct ...
... suitable for resonant topologies due to their ease of use behavior, low RDS(on) and their integrated fast body diode. This fast body diode is an important feature to prevent failures in the used topology during short circuit, line cycle drop out or burst mode. (MOSFET A, B, C, D) (2) Resonant induct ...
PAM3116 Description Pin Assignments
... 4.7µF minimum value capacitor from VO to GND is also required. To improve transient response, noise rejection, and ripple rejection, an additional 1 0μF or larger, low ESR capacitor is recommended at the output. A higher-value, low ESR output capacitor may be necessary if large, fast-rise-time load ...
... 4.7µF minimum value capacitor from VO to GND is also required. To improve transient response, noise rejection, and ripple rejection, an additional 1 0μF or larger, low ESR capacitor is recommended at the output. A higher-value, low ESR output capacitor may be necessary if large, fast-rise-time load ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.