AN4026
... The L6699 enables the user to set the operating frequency range of the converter by means of a high-accuracy externally programmable oscillator. At startup, in addition to the traditional frequency-shift soft-start (the switching frequency starts from a preset maximum value and then decays as far as ...
... The L6699 enables the user to set the operating frequency range of the converter by means of a high-accuracy externally programmable oscillator. At startup, in addition to the traditional frequency-shift soft-start (the switching frequency starts from a preset maximum value and then decays as far as ...
MC79L00 - 100 mA Negative Voltage Regulators
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
7 Measurement of High Voltages and Currents In industrial testing
... the axis of the other low voltage electrodes SQ, S\9 and $2» The rotor ^o *s driven at a constant speed by a synchronous motor at a suitable speed (1500,1800,3000, or 3600 rpm). The rotor vanes of SQ cause periodic change in capacitance between the insulated disc $2 and the h.v. electrode £3. The sh ...
... the axis of the other low voltage electrodes SQ, S\9 and $2» The rotor ^o *s driven at a constant speed by a synchronous motor at a suitable speed (1500,1800,3000, or 3600 rpm). The rotor vanes of SQ cause periodic change in capacitance between the insulated disc $2 and the h.v. electrode £3. The sh ...
AN109 - Interfacing RF I/Q Modulators with Popular D/A Converters
... an RF system impedance of 50Ω, this is 45.5dB above kTB, or –128.5dBm/Hz. Note, however, that this elevation of noise level occurs only within the passband of the active filter. So the broadband output noise level of the modulator is not affected by the use of the active device. To assess the effect ...
... an RF system impedance of 50Ω, this is 45.5dB above kTB, or –128.5dBm/Hz. Note, however, that this elevation of noise level occurs only within the passband of the active filter. So the broadband output noise level of the modulator is not affected by the use of the active device. To assess the effect ...
Old Company Name in Catalogs and Other Documents
... subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be d ...
... subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be d ...
AP7312
... Fast transient response LDO can extend battery life. TDMA-based cell phone protocols such as Global System for Mobile Communications (GSM) have a transmit/receive duty factor of only 12.5 percent, enabling power savings by putting much of the baseband circuitry into standby mode in between transmit ...
... Fast transient response LDO can extend battery life. TDMA-based cell phone protocols such as Global System for Mobile Communications (GSM) have a transmit/receive duty factor of only 12.5 percent, enabling power savings by putting much of the baseband circuitry into standby mode in between transmit ...
TPS54160-Q1 数据资料 dataSheet 下载
... MOSFET. To improve performance during line and load transients the device implements a constant frequency, current mode control which reduces output capacitance and simplifies external frequency compensation design. The wide switching frequency of 300 kHz to 2500 kHz allows for efficiency and size o ...
... MOSFET. To improve performance during line and load transients the device implements a constant frequency, current mode control which reduces output capacitance and simplifies external frequency compensation design. The wide switching frequency of 300 kHz to 2500 kHz allows for efficiency and size o ...
AP7332
... Fast transient response LDO can extend battery life. TDMA-based cell phone protocols such as Global System for Mobile Communications (GSM) have a transmit/receive duty factor of only 12.5 percent, enabling power savings by putting much of the baseband circuitry into standby mode in between transmit ...
... Fast transient response LDO can extend battery life. TDMA-based cell phone protocols such as Global System for Mobile Communications (GSM) have a transmit/receive duty factor of only 12.5 percent, enabling power savings by putting much of the baseband circuitry into standby mode in between transmit ...
VSLB3948
... time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed t ...
... time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed t ...
Old Company Name in Catalogs and Other Documents
... • The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all product ...
... • The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all product ...
AN10721 Logic level VGS ratings for NXP power MOSFETs
... rating infers a thick gate oxide. In most cases, both requirements can be met whereby gate bias life testing can be performed at a value of 100 % of the absolute maximum rating. However, there are some instances where this is not possible. When logic level devices were first introduced they were des ...
... rating infers a thick gate oxide. In most cases, both requirements can be met whereby gate bias life testing can be performed at a value of 100 % of the absolute maximum rating. However, there are some instances where this is not possible. When logic level devices were first introduced they were des ...
Sixth-Generation V-Series IGBT Module Application
... Figure 3-3 shows the waveforms when the V series IGBT of 1200V is turned off in very severe conditions. Figure 3-3 (a) shows the waveforms when main circuit inductance is very large. Figure 3-3 (b) indicates the waveforms when voltage far severer than the normal conditions is applied and when the IG ...
... Figure 3-3 shows the waveforms when the V series IGBT of 1200V is turned off in very severe conditions. Figure 3-3 (a) shows the waveforms when main circuit inductance is very large. Figure 3-3 (b) indicates the waveforms when voltage far severer than the normal conditions is applied and when the IG ...
AN109 - Interfacing RF I/Q Modulators with Popular D/A Converters
... an RF system impedance of 50Ω, this is 45.5dB above kTB, or –128.5dBm/Hz. Note, however, that this elevation of noise level occurs only within the passband of the active filter. So the broadband output noise level of the modulator is not affected by the use of the active device. To assess the effect ...
... an RF system impedance of 50Ω, this is 45.5dB above kTB, or –128.5dBm/Hz. Note, however, that this elevation of noise level occurs only within the passband of the active filter. So the broadband output noise level of the modulator is not affected by the use of the active device. To assess the effect ...
PAM3131BECR - Diodes Incorporated
... 4.7µF minimum value capacitor from VO to GND is also required. To improve transient response, noise rejection, and ripple rejection, an additional 1 0μF or larger, low ESR capacitor is recommended at the output. A higher-value, low ESR output capacitor may be necessary if large, fast-rise-time load ...
... 4.7µF minimum value capacitor from VO to GND is also required. To improve transient response, noise rejection, and ripple rejection, an additional 1 0μF or larger, low ESR capacitor is recommended at the output. A higher-value, low ESR output capacitor may be necessary if large, fast-rise-time load ...
ZX5T1951G Features and Benefits Mechanical Data
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
PAM2808 Description Pin Assignments
... 4.7µF minimum value capacitor from VO to GND is also required. To improve transient response, noise rejection, and ripple rejection, an additional 10μF or larger, low ESR capacitor is recommended at the output. A higher-value, low ESR output capacitor may be necessary if large, fast-rise-time load t ...
... 4.7µF minimum value capacitor from VO to GND is also required. To improve transient response, noise rejection, and ripple rejection, an additional 10μF or larger, low ESR capacitor is recommended at the output. A higher-value, low ESR output capacitor may be necessary if large, fast-rise-time load t ...
ZXTN4004Z
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
AN-4162 — Switch Node Ring Control in Synchronous Buck
... ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other in ...
... ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other in ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.