TPS65030 数据资料 dataSheet 下载
... circuits have been qualified to protect this device against electrostatic discharges; HBM according to EIA/JESD22-A114-B; MM according EIA/JESD22-A115-A and CDM according EIA/JESD22C101C, however, it is advised that precautions should be taken to avoid application of any voltage higher than maximum- ...
... circuits have been qualified to protect this device against electrostatic discharges; HBM according to EIA/JESD22-A114-B; MM according EIA/JESD22-A115-A and CDM according EIA/JESD22C101C, however, it is advised that precautions should be taken to avoid application of any voltage higher than maximum- ...
Switch-on-to-Fault Schemes in the Context of Line Relay Loadability
... In the case of modern relays, every manufacturer has its own design, in some cases with user choices for scheme logic as well as element settings. In some SOTF schemes the use of breaker auxiliary contacts and/or breaker “close” signaling is included, which limits scheme exposure to actual breaker c ...
... In the case of modern relays, every manufacturer has its own design, in some cases with user choices for scheme logic as well as element settings. In some SOTF schemes the use of breaker auxiliary contacts and/or breaker “close” signaling is included, which limits scheme exposure to actual breaker c ...
TPD6V8LP Features Mechanical Data
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
orta geri̇li̇m şalt tesi̇si̇
... This technical document describes switchgears used in medium voltage cubicles up to 17,5 kV METAL-CLAD, WITHDRAWABLE VACUUM CIRCUIT BREAKER and electrical materials used in these switchgears. Medium voltage switchgears ensure conditions and features described in the following sections of this docume ...
... This technical document describes switchgears used in medium voltage cubicles up to 17,5 kV METAL-CLAD, WITHDRAWABLE VACUUM CIRCUIT BREAKER and electrical materials used in these switchgears. Medium voltage switchgears ensure conditions and features described in the following sections of this docume ...
FJAFS1720 ESBC Rated NPN Power Transistor ™
... The ESBC™ switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching, The ESBC™ configuration further minimizes the required driving power because it ...
... The ESBC™ switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching, The ESBC™ configuration further minimizes the required driving power because it ...
Section 2.3 Bipolar junction transistors
... the vast majority of silicon devices produced today The BJT has three separately doped regions and two p-n junctions, which are sufficiently close together that they interact with each other. In this sense a BJT must NOT be considered as two back-to-back diodes. The BJT is a voltage-controlled curre ...
... the vast majority of silicon devices produced today The BJT has three separately doped regions and two p-n junctions, which are sufficiently close together that they interact with each other. In this sense a BJT must NOT be considered as two back-to-back diodes. The BJT is a voltage-controlled curre ...
LTC4444-5 - Linear Technology
... will rise to VIN very rapidly. This high frequency positive voltage transient will couple through the CGD capacitance of the low side power MOSFET to the BG pin. If there is an insufficient pull-down on the BG pin, the voltage on the BG pin can rise above the threshold voltage of the low side power ...
... will rise to VIN very rapidly. This high frequency positive voltage transient will couple through the CGD capacitance of the low side power MOSFET to the BG pin. If there is an insufficient pull-down on the BG pin, the voltage on the BG pin can rise above the threshold voltage of the low side power ...
TC75S54F, TC75S54FU, TC75S54FE
... • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and ...
... • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and ...
Chapter 4.2 - Power Supply Circuits
... regulation is required. In the past, the task of voltage regulator design was tediously accomplished with discrete devices, and the results were quite often complex and costly. Today, with bipolar monolithic regulators, this task has been significantly simplified. The designer now has a wide choice ...
... regulation is required. In the past, the task of voltage regulator design was tediously accomplished with discrete devices, and the results were quite often complex and costly. Today, with bipolar monolithic regulators, this task has been significantly simplified. The designer now has a wide choice ...
ziv_wprc2013 analysis of oltc of parallel transformers
... tool to maintain the voltage profiles along the grid, but they have to work in cooperation with other devices also connected to the grid, e.g. capacitor banks or reactors, in order to control properly not only the voltage but also the reactive power flow. The parallel operation of power transformers ...
... tool to maintain the voltage profiles along the grid, but they have to work in cooperation with other devices also connected to the grid, e.g. capacitor banks or reactors, in order to control properly not only the voltage but also the reactive power flow. The parallel operation of power transformers ...
Symmetric Gto And Snubber Component Characterization In Pwm
... commanded to turn on, its voltage will collapse and it is dependent on the device turn-on time . Device T1 will be reverse biased when device T3 is fully on. The turn off of T1 is dependent on the device storage time . If the rate of of device T1 is large enough [i.e., fall of current ] is significa ...
... commanded to turn on, its voltage will collapse and it is dependent on the device turn-on time . Device T1 will be reverse biased when device T3 is fully on. The turn off of T1 is dependent on the device storage time . If the rate of of device T1 is large enough [i.e., fall of current ] is significa ...
BD33C0AWFP
... capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preve ...
... capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preve ...
CET
... The active harmonic filter is also a voltage following device which means there are we have the two devices trying to compensate for the distortion. The result is generally an unsatisfactory condition. During the testing activities on October 15th several of the UPS’s failed to come on-line when tra ...
... The active harmonic filter is also a voltage following device which means there are we have the two devices trying to compensate for the distortion. The result is generally an unsatisfactory condition. During the testing activities on October 15th several of the UPS’s failed to come on-line when tra ...
AN10909 Low VCEsat transistors in medium power load switch
... for the design. They define the performance of especially TR1 where most power losses occur. The control switch TR2 typically is a general-purpose transistor like a BC847 or PMBT3904, and has to deliver currents in the range of a few up to 100 mA as base drive for TR1. Typical values for hFE are aro ...
... for the design. They define the performance of especially TR1 where most power losses occur. The control switch TR2 typically is a general-purpose transistor like a BC847 or PMBT3904, and has to deliver currents in the range of a few up to 100 mA as base drive for TR1. Typical values for hFE are aro ...
Mercury-arc valve
A mercury-arc valve or mercury-vapor rectifier or (UK) mercury-arc rectifier is a type of electrical rectifier used for converting high-voltage or high-current alternating current (AC) into direct current (DC). It is a type of cold cathode gas-filled tube, but is unusual in that the cathode, instead of being solid, is made from a pool of liquid mercury and is therefore self-restoring. As a result, mercury-arc valves were much more rugged, long-lasting and could carry much higher currents than most other types of gas discharge tube.Invented in 1902 by Peter Cooper Hewitt, mercury-arc rectifiers were used to provide power for industrial motors, electric railways, streetcars, and electric locomotives, as well as for radio transmitters and for high-voltage direct current (HVDC) power transmission. They were the primary method of high power rectification before the advent of semiconductor rectifiers, such as diodes, thyristors and gate turn-off thyristors (GTOs) in the 1970s.