Evaluates: MAX1698 MAX1698 Evaluation Kit General Description Features
... and tested circuit board that contains a boost switching-regulator current source and array of white LEDs. As configured, the circuit is set up to drive 3 banks of 3 series LED arrays at 20mA each; however, a wide variety of other configurations are possible. The IC can be powered from a separate +2 ...
... and tested circuit board that contains a boost switching-regulator current source and array of white LEDs. As configured, the circuit is set up to drive 3 banks of 3 series LED arrays at 20mA each; however, a wide variety of other configurations are possible. The IC can be powered from a separate +2 ...
FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET
... These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. ...
... These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. ...
ST13007
... switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ...
... switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ...
EMH10
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
SMA6J Series
... • Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/JEDEC J-STD609A.01) ...
... • Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/JEDEC J-STD609A.01) ...
NCEA Level 3 Physics (91526) 2013 Assessment Schedule
... the reactance is zero and so the impedance is smallest. When the current is greatest the sound from the speaker is loudest. The current decreases rapidly either side of resonance because the reactance increases either side of resonance. So if the frequency is reduced quickly through the resonant fre ...
... the reactance is zero and so the impedance is smallest. When the current is greatest the sound from the speaker is loudest. The current decreases rapidly either side of resonance because the reactance increases either side of resonance. So if the frequency is reduced quickly through the resonant fre ...
System-Level Modeling and Simulation of Optical MEM Systems
... small integrated devices or systems that combine electrical and mechanical components range in size from the sub micrometer (or sub micron) level to the millimeter level, and there can be any number, from a few to millions, in a particular system MEMS extend the fabrication techniques developed for ...
... small integrated devices or systems that combine electrical and mechanical components range in size from the sub micrometer (or sub micron) level to the millimeter level, and there can be any number, from a few to millions, in a particular system MEMS extend the fabrication techniques developed for ...
AN139A - NXP Semiconductors
... on the 6 dB per octave portion of the power gain versus frequency curve, and multiplying the square root of the power gain with the frequency of measurement (see Figure 6). The symbol for common emitter power gain is Gpe. The parameters are voltage and current dependent, and operating point must be ...
... on the 6 dB per octave portion of the power gain versus frequency curve, and multiplying the square root of the power gain with the frequency of measurement (see Figure 6). The symbol for common emitter power gain is Gpe. The parameters are voltage and current dependent, and operating point must be ...
Document
... Explain how the forces on a current-carrying coil in a magnetic field produce a turning effect on the coil. Explain how this effect is used in a simple DC electric motor. Describe the effect of changing: • the size of the electric current • the number of turns on the coil • the strength of the magne ...
... Explain how the forces on a current-carrying coil in a magnetic field produce a turning effect on the coil. Explain how this effect is used in a simple DC electric motor. Describe the effect of changing: • the size of the electric current • the number of turns on the coil • the strength of the magne ...
Power MOSFET 9 A, 52 V, N-Channel, Logic Level
... the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal respo ...
... the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal respo ...
AN004E - Semiconductor Consideration for DC Power Supply
... ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ...
... ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ...
MTP3N60E Designer`s™ Data Sheet TMOS E−FET.™ High Energy
... E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC ...
... E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC ...
EE 101 Lab 4 Digital Signals
... push the pulse button the actual output frequency is 1/10th the value indicated on the function generator display, so observe the waveform with the oscilloscope to make sure the pulse repetition frequency is 1 kHz. Choose a sweep rate on the scope so that about two cycles of the waveform are visible ...
... push the pulse button the actual output frequency is 1/10th the value indicated on the function generator display, so observe the waveform with the oscilloscope to make sure the pulse repetition frequency is 1 kHz. Choose a sweep rate on the scope so that about two cycles of the waveform are visible ...
VIPer22A
... 38V.This feature offers a great flexibility in Design to achieve various behaviors. In figure 8 A forward configuration has been chosen to Supply the Device with two benefits: – as soon as the device starts switching, it Immediately receives some energy from the ...
... 38V.This feature offers a great flexibility in Design to achieve various behaviors. In figure 8 A forward configuration has been chosen to Supply the Device with two benefits: – as soon as the device starts switching, it Immediately receives some energy from the ...
Diodes
... stable power supply. In fact, neither supply is very good. Both are unregulated. Regulated power supplies will be studied in a later lab. The Zener Diode Use the setup of Part 1 above to measure the V-I characteristic for a Zener diode, the 1N4734, which has a Zener voltage of 5.6 V. (Note: In the f ...
... stable power supply. In fact, neither supply is very good. Both are unregulated. Regulated power supplies will be studied in a later lab. The Zener Diode Use the setup of Part 1 above to measure the V-I characteristic for a Zener diode, the 1N4734, which has a Zener voltage of 5.6 V. (Note: In the f ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.